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Three-Dimensional, Inkjet-Printed Organic Transistors and Integrated Circuits with 100% Yield, High Uniformity, and Long-Term Stability
ACS Nano ( IF 15.8 ) Pub Date : 2016-10-24 00:00:00 , DOI: 10.1021/acsnano.6b06041 Jimin Kwon 1 , Yasunori Takeda 2 , Kenjiro Fukuda 2 , Kilwon Cho 3 , Shizuo Tokito 2 , Sungjune Jung 1
ACS Nano ( IF 15.8 ) Pub Date : 2016-10-24 00:00:00 , DOI: 10.1021/acsnano.6b06041 Jimin Kwon 1 , Yasunori Takeda 2 , Kenjiro Fukuda 2 , Kilwon Cho 3 , Shizuo Tokito 2 , Sungjune Jung 1
Affiliation
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In this paper, we demonstrate three-dimensional (3D) integrated circuits (ICs) based on a 3D complementary organic field-effect transistor (3D-COFET). The transistor-on-transistor structure was achieved by vertically stacking a p-type OFET over an n-type OFET with a shared gate joining the two transistors, effectively halving the footprint of printed transistors. All the functional layers including organic semiconductors, source/drain/gate electrodes, and interconnection paths were fully inkjet-printed except a parylene dielectric which was deposited by chemical vapor deposition. An array of printed 3D-COFETs and their inverter logic gates comprising over 100 transistors showed 100% yield, and the uniformity and long-term stability of the device were also investigated. A full-adder circuit, the most basic computing unit, has been successfully demonstrated using nine NAND gates based on the 3D structure. The present study fulfills the essential requirements for the fabrication of organic printed complex ICs (increased transistor density, 100% yield, high uniformity, and long-term stability), and the findings can be applied to realize more complex digital/analogue ICs and intelligent devices.
中文翻译：
具有100％良率，高均匀性和长期稳定性的三维喷墨印刷有机晶体管和集成电路
在本文中，我们演示了基于3D互补有机场效应晶体管（3D-COFET）的三维（3D）集成电路（IC）。晶体管叠层晶体管结构是通过将p型OFET垂直堆叠在n型OFET上而实现的，共享栅极连接两个晶体管，有效地将印刷晶体管的占位面积减少了一半。除通过化学气相沉积法沉积的聚对二甲苯电介质外，所有功能层（包括有机半导体，源/漏/栅电极和互连路径）均已完全喷墨印刷。印刷的3D-COFET阵列及其包括100多个晶体管的逆变器逻辑门显示出100％的良率，并且还研究了器件的均匀性和长期稳定性。全加法器电路，最基本的计算单元，已成功使用基于3D结构的九个NAND门进行了演示。本研究满足了有机印刷复杂IC制造的基本要求（提高了晶体管密度，100％合格率，高均匀性和长期稳定性），并且该发现可用于实现更复杂的数字/模拟IC和智能设备。
更新日期：2016-10-24
中文翻译：
具有100％良率，高均匀性和长期稳定性的三维喷墨印刷有机晶体管和集成电路
在本文中，我们演示了基于3D互补有机场效应晶体管（3D-COFET）的三维（3D）集成电路（IC）。晶体管叠层晶体管结构是通过将p型OFET垂直堆叠在n型OFET上而实现的，共享栅极连接两个晶体管，有效地将印刷晶体管的占位面积减少了一半。除通过化学气相沉积法沉积的聚对二甲苯电介质外，所有功能层（包括有机半导体，源/漏/栅电极和互连路径）均已完全喷墨印刷。印刷的3D-COFET阵列及其包括100多个晶体管的逆变器逻辑门显示出100％的良率，并且还研究了器件的均匀性和长期稳定性。全加法器电路，最基本的计算单元，已成功使用基于3D结构的九个NAND门进行了演示。本研究满足了有机印刷复杂IC制造的基本要求（提高了晶体管密度，100％合格率，高均匀性和长期稳定性），并且该发现可用于实现更复杂的数字/模拟IC和智能设备。
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