按发表时间顺序：

J. Z. Huang, Z. T. Ji, J. J. Chen, W. Q. Wei, J. L. Qin, Z. H. Wang, T. Wang, X. Xiao, and J. J. Zhang, “Ultra-broadband flat-top quantum dot comb source,” Photon. Res. 10, 1308 (2022).  10.1364/PRJ.446349 

 

Z. H. Wang, W. Q. Wei, Q. Feng, T. Wang, and J. J. Zhang, "InAs/GaAs quantum dot single-section mode-locked lasers on Si (001) with optical self-injection feedback" Opt. Express. 29, 674-683 (2021). 10.1364/OE.411551

 

J. Y. Zhang，F. Gao and J. J. Zhang,“Research progress of silicon and germanium quantum computing materials”Acta Phys. Sin. 70, 217802 (2021) . 10.7498/aps.71.20211492

 

 J. J. Chen , Z. H. Wang , W. Q. Wei , T. Wang and J. J. Zhang, "Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance.”Front. Mater. 8,(2021). 10.3389/fmats.2021.648049

 

 H. Cong, B. Yang, W. Q. Wei, J. H. Wang, Q. Feng, Z. H. Wang, T. Wang, X. H. Guo, and J. J. Zhang. "Suspended AlGaAs waveguide for integrated nonlinear photonics."  Appl. Phys. Lett. 119, 133502 (2021). 10.1063/5.0063630

 

J. Z. Huang, W. Q. Wei, J. J. Chen, Z. H. Wang, T. Wang, and J. J. Zhang, “P-doped 1300 nm InAs/GaAs quantum dot lasers directly grown on an SOI substrate,” Opt. Lett., 46，5525-5528 (2021).  10.1364/OL.437471 

 

D. M. Huang, J. Y. Zhang, J. H. Wang, W. Q. Wei, Z. H. Wang, T. Wang, J. J. Zhang "Bufferless epitaxial growth of GaAs on step-free Ge (001) mesa", Chin. Phys. Lett. 38, 068101 (2021).  1088/0256-307X/38/6/068101

 

W. Q. Wei, J. Y. Zhang, J. H. Wang, H. Cong, J. J. Guo, Z. H. Wang, H. X. Xu, T. Wang, J. J. Zhang. “Phosphorus-free 1.5 μmInAs quantum-dot microdisk lasers on metamorphic InGaAs/SOI platform”, Opt. Lett. 45, 2042 (2020). 10.1364/OL.389191

 

 F. Gao, J. H. Wang, H. Watzinger, H. Hu, M. J. Rančić, J. Y. Zhang, T.Wang,Y. Yao, G. L. Wang, J. Kukučka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros, J. J. Zhang.“Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling”,Adv. Mater. 32, 1906523 (2020). 10.1002/adma.201906523

 

J. Y. Zhang, W. Q. Wei, J. H. Wang, H. Cong, Q. Feng, Z. H. Wang, T. Wang, J. J. Zhang. “Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate”, Opt. Mater. Express 10, 1045 (2020). 10.1364/OME.383742

 

高飞,冯琦,王霆,张建军. “硅（001）图形衬底上锗硅纳米线的定位生长”,物理学报62, 028102 (2020).  10.7498/aps.69.20191407

 

B. Zhang, W. Q. Wei, J. H Wang, J. Y. Zhang, H. Cong, Q. Feng, T. Wang, J. J. Zhang, “1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy”, Opt. Express 27, 19348 (2019). 10.1364/OE.27.019348

 

Q. Feng, W. Q. Wei, B. Zhang, H. L. Wang, J. H. Wang, H. Cong, T. Wang, J. J. Zhang, “O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate” Appl. Sci. 9, 385 (2019). 10.3390/app9030385

 

B. Zhang, W. Q. Wei, J. H. Wang, H. L. Wang, Z. Zhao, L. Liu, H. Cong, Q. Feng, H. Y. Liu, T. Wang, J. J. Zhang, “O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy”, AIP Advances 9, 015331 (2019). 10.1063/1.5065527

 

 W. Q. Wei, J. H. Wang, B. Zhang, J. Y. Zhang, H. L. Wang, Q. Feng, H. X. Xu, T. Wang, J. J. Zhang, “InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm”, Appl. Phys. Lett. 113, 053107 (2018). 10.1109/GROUP4.2019.8925748

 

H. Watzinger, J. Kukucka, L. Vukusic, F. Gao, T. Wang, F. Schaeffler, J. J. Zhang, G. Katsaros, “A germanium hole spin qubit”, Nat. Comm. 9, 3902 (2018). 10.1038/s41467-018-06418-4

 

Y. Li, S.-X. Li, F. Gao, H.-O. Li, G. Xu, K. Wang, D. Liu, G. Cao, M. Xiao, T. Wang, J. J. Zhang, G. C. Guo, G. P. Guo, “Coupling a Germanium Hut Wire Hole Quantum Dot to a Superconducting Microwave Resonator”, Nano Lett. 18, 2091 (2018). 10.1021/acs.nanolett.8b00272

 

王海玲，王霆，张建军, “GaAs 图形衬底上InAs量子点的定位生长”, Acta Phys. Sin. 68, 117301 (2019). 10.7498/aps.68.20190317

 

 H. L. Wang, W. Q. Wei, J. H. Wang, Q. Feng, S. Wu, H. Yang, X. Xu, T. Wang, J. J. Zhang, “Catalyst-free growth of lateral InAs nanowires”, J. Cryst. Growth 498, 209 (2018). 10.1016/j.jcrysgro.2018.06.025

 

W. Q. Wei, J. H. Wang, Y. Gong, J. A. Shi, L. Gu, H. X. Xu, T. Wang, J. J. Zhang, “C/L-band emission of InAs QDs monolithically grown on Ge substrate”, Opt. Mater. Express 7, 2955 (2017). 10.1364/OME.7.002955

 

Q. Feng, H. Cong, B. Zhang, W. Q. Wei, Y. Liang, S. Fang, T. Wang, J. J. Zhang, “Enhanced optical Kerr nonlinearity of graphene/Si hybrid waveguide”, Appl. Phys. Lett. 114, 071104 (2019). 10.1063/1.5064832

 

S. X. Li, Y. Li, F. Gao, G. Xu, H. O. Li; G. Cao, M. Xiao, T. Wang, J. J. Zhang, G. P. Guo, “Measuring hole spin states of single quantum dot in germanium hut wire”, Appl. Phys. Lett. 110, 133105 (2017). 1063/1.4979521

 

Y. Li, S. X. Li, F. Gao, H. O. Li, G. Xu, K. Wang, H. Liu, G. Cao, M. Xiao, T. Wang, J. J. Zhang, G. P. Guo, “Measuring the complex admittance and tunneling rate of a germanium hut wire hole quantum dot”, J. App. Phys. 123, 174305 (2018). 10.1063/1.5026946

 

 T. Wang, H. L. Liu, J. J. Zhang, “Temperature-dependent photoluminescence characteristics of InAs/GaAs quantum dots directly grown on Si substrates”, Chin. Phys. Lett. 33, 044207 (2016). 10.1088/0256-307X/33/4/044207

 

Zhang J, Brehm M, Grydlik M, et al. Evolution of epitaxial semiconductor nanodots and nanowires from supersaturated wetting layers[J]. Chemical Society Reviews, 2015, 44(1): 26-39. 10.1039/c4cs00077c

 

Zhang J J, Schmidt O G. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si (001)[J]. Applied Physics Letters, 2013, 103(14): 143112. 10.1063/1.4824121

 

Zhang J J, Rastelli A, Schmidt O G, et al. Self-organized evolution of Ge/Si (001) into intersecting bundles of horizontal nanowires during annealing[J]. Applied Physics Letters, 2013, 103(8): 083109.  10.1063/1.4818717

 

Zhang J J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge nanowires on Si (001)[J]. Physical review letters, 2012, 109(8): 085502. 10.1103/PhysRevLett.109.085502

 

Zhang J, Rastelli A, Schmidt O G, et al. Site‐controlled SiGe islands on patterned Si (001): Morphology, composition profiles, and devices[J]. physica status solidi (b), 2012, 249(4): 752-763. 10.1002/pssb.201100771

 

Wang T, Lee A, Tutu F, et al. The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates[J]. Applied Physics Letters, 2012, 100(5): 052113. 10.1063/1.3682314

 

Liu H, Wang T, Jiang Q, et al. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate[J]. Nature Photonics, 2011, 5(7): 416-419. 10.1038/nphoton.2011.120 

 

Wang T, Liu H, Lee A, et al. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates[J]. Optics express, 2011, 19(12): 11381-11386. 10.1364/OE.19.011381

 

Zhang J J, Rastelli A, Schmidt O G, et al. Role of the wetting layer for the SiGe Stranski–Krastanow island growth on planar and pit-patterned substrates[J]. Semiconductor Science and Technology, 2010, 26(1): 014028. 10.1088/0268-1242/26/1/014028

 

Zhang J J, Montalenti F, Rastelli A, et al. Collective shape oscillations of SiGe islands on pit-patterned Si (001) substrates: a coherent-growth strategy enabled by self-regulated intermixing[J]. Physical review letters, 2010, 105(16): 166102. 10.1103/PhysRevLett.105.166102

 

Zhang J, Rastelli A, Schmidt O G, et al. Compositional evolution of SiGe islands on patterned Si (001) substrates[J]. Applied Physics Letters, 2010, 97(20): 203103. 10.1063/1.3514239

 

Zhang J J, Hrauda N, Groiss H, et al. Strain engineering in Si via closely stacked, site-controlled SiGe islands[J]. Applied Physics Letters, 2010, 96(19): 193101. 10.1063/1.3425776

 

Zhang J J, Rastelli A, Groiss H, et al. Shaping site-controlled uniform arrays of SiGe/Si (001) islands by in situ annealing[J]. Applied Physics Letters, 2009, 95(18): 183102. 10.1063/1.3258648

 

Zhang J J, Stoffel M, Rastelli A, et al. SiGe growth on patterned Si (001) substrates: Surface evolution and evidence of modified island coarsening[J]. Applied Physics Letters, 2007, 91(17): 173115. 10.1063/1.2802555

 

Zhang J, Zhang K, Zhong J. Local self-organization of islands in embedded nanodot systems[J]. Applied physics letters, 2004, 84(11): 1853-1855. 10.1063/1.1669079 

 

Zhang J, Zhang K, Zhong J. Replication and alignment of quantum dots in multilayer heteroepitaxial growth[J]. Surface science, 2004, 551(1): L40-L46. 10.1016/j.susc.2003.12.009