论文

2022

76. Song B, Gao B*, Han P, Yu Y, Tang X,  Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H 

Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System, Materials 2022, 15(11), 3768.

75. Han P, Song B, Gao B*,  Yu Y, Tang X, Large-sized GaN Growth Analysis in an Ammonothermal System Based on a 

Well-developed Numerical Model, Materials 2022,  Materials 2022, 15(12), 4137. 

74. Han P, Song B, Gao B*,  Yu Y, Tang X, Improving the GaN Growth Rate by Optimizing Nutrient Basket Geometry in an

 Ammonothermal System based on numerical simulation, ACS Omega, 2022, 7(11): 9359-9368, DOI: 10.1021/acsomega.1c06154.

73. Yu Y, Liu B, Tang X, Gao B*, The effect of the crucible on the temperature distribution for the growth of large size 

AlN single crystal, Materials 2022, 15(1), 54. https://doi.org/10.3390/ma15010054

2021

72. Tang X, Liu B, Yu Y, Song B, Han P, Liu S, Gao B*, Effect of Internal Radiation on Process Parameters in the Global 

Simulation of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method. Crystals 2021, 11, 763.

https://doi.org/10.3390/cryst11070763

71. Song B, Gao B*, Han P, Yu Y, Tang X, Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor 

Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor, Materials 2021, 14(24), 7532. 

https://doi.org/10.3390/ma14247532

70. Tang X, Liu B, Yu Y, Gao B*,  Numerical Analysis of Difficulties of Growing Large size bulk β-Ga2O3 single crystals by 

Czochralski method. Crystals, 2021, 11, 25. https://doi.org/10.3390/cryst11010025

2020

69. Zhang C, Gao B, Tremsin AS, Perrodin D, Shalapska T, Shalapska ED, Shalapska DR, Shalapska SC, Derby JJ. Analysis of chemical stress and the propensity for cracking during the vertical Bridgman growth of BaBrCl:Eu, Journal of Crystal Growth, 2020, 546: 125794. 

68. Yu Y, Liu B, Tang X, Gao B*, Homogenization of radial temperature by a tungsten sink in sublimation growth of 45mm

 AlN single crystal. Materials 2020, 13, 5553. https://www.mdpi.com/1996-1944/13/23/5553

67.   Liu B, Yu Y, Tang X, Gao B*. Optimization of crucible and heating model for large-sized silicon carbide ingot growth in top-seeded solution growth[J]. Journal of Crystal Growth, 2020, 533: 125406. https://doi.org/10.1016/j.jcrysgro.2019.125406

2019

66.   Liu B, Yu Y, Tang X, Gao B*. Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth[J]. Journal of Crystal Growth, 2019, 527: 125248. https://doi.org/10.1016/j.jcrysgro.2019.125248

65.   Liu B, Tang X, Yu Y, Gao B*. Numerical Investigation of Thermal Buoyancy, the Electromagnetic Force and Forced Convection in Conventional RF Systems for 4-Inch Sic by TSSG[J]. Crystals, 2019, 9(10): 516. https://doi.org/10.3390/cryst9100516

64.   Liu B, Yu Y, Tang X, Gao B*. Improvement of growth interface stability for 4-inch silicon carbide crystal growth using TSSG[J]. Crystals, 2019, 9(12): 653. https://doi.org/10.3390/cryst9120653

2017

63.   B. Gao*, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto, Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations, Journal of Crystal Growth, 474 (15) 121-129, 2017.

62.   Koichi Kakimoto, Bing Gao, Satoshi Nakano, Hirofumi Harada, and Yoshiji Miyamura, “Silicon bulk growth for solar cells: Science and technology”, Japanese Journal of Applied Physics 56 (2), 020101.

61.   S. Nakano, B. Gao, K. Kakimoto, Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process”, Journal of Crystal Growth 468 (2017) 839–844.

60.   S. Nakano, B. Gao, K. Jiptner, H. Harada, Y. Miyamura, T. Sekiguchi, M. Fukuzawa, K. Kakimoto, Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells, Journal of Crystal Growth 474 (2017) 130–134. 

59.   Xin Liu, Bing Gao, Satoshi Nakano, Koichi Kakimoto, Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth, Journal of Crystal Growth 474, 3–7, 2017.

 

2016

58.   B. Gao*, J. Mari, M. Mohammed, Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops, Journal of Crystal Growth, 453, 173–179, 2016.

57.   K. Kakimoto, B. Gao, X. Liu, S. Nakano, Growth of semiconductor silicon crystals, Progress in crystal growth and characterization of materials, 62, 273-285, 2016.

56.   K. Jiptner, Y. Miyamura, B. Gao, H. Harada, K. Kakimoto Koichi, T. Sekiguchi,  Orientation dependency of dislocation generation in Si growth process，Solid State Phenomena, 242, 15-20, 2016.

55.   T. Sekiguchi, Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. Prakash, S. Nakano, B. Gao, K. Kakimoto, 50 cm size Seed Cast Si ingot growth and its characterization，Solid State Phenomena, 242, 30-34, 2016.

54.   S. Araki, B. Gao, S. Nishizawa, S. Nakano, K. Kakimoto, Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory, Crystal Research and Technology, 51, 344-348, 2016.

53.   S. Nakano, B. Gao, K. Jiptner, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells, Journal of Crystal Growth, in press, 2016.

 

2015

52.   B. Gao*, K. Kakimoto, Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals, Journal of Applied Physics, 117 (3), 035701, 2015.

51.   B. Gao*, K. Jiptner, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon, Journal of Crystal Growth, 411, 49-55, 2015.

50.   B. Gao*, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells, Engineering, 1(3), 2015.

49.   Y. Miyamura, H. Harada, K. Jiptner, S. Nakano, B. Gao, K. Kakimoto, K. Nakamura, Y. Ohshita, A. Ogura, S. Sugawara, T. Sekiguchi, Advantage in solar cell efficiency of high-quality seed cast mono Si ingot, Applied Physics Express, 8, 062301, 2015.

48.   T. Sekiguchi, K. Jiptner, R. R. Prakash, J. Chen, Y. Miyamura, H. Harada, S. Nakano, B. Gao, K. Kakimoto, Control of extended defects in cast and seed cast Si ingots for photovoltaic application, Phys. Status Solidi C, 1–5, 2015

47.   X. Liu, B. Gao, K. Kakimoto, Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth, Journal of Crystal Growth, 417, 58–64, 2015.

46.   X. Liu, B. Gao, S. Nakano, K. Kakimoto, Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth, Cryst. Res. Technol., 1–6, 2015.

45.   K. Jiptner, Y. Miyamura, H. Harada, B. Gao, K. Kakimoto, T. Sekiguchi, Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation, Progress in Photovoltaics: Research and Applications, 2015, DOI: 10.1002/pip.2708.

 

2014

44.   B. Gao*, S. Nakano, N. Miyazaki, K. Kakimoto, Alexander–Haasen model of basal plane dislocations in single-crystal sapphire, Crystal Growth & Design, 14 (8), 4080–4086, 2014.

43.   B. Gao*, K. Kakimoto, Three-dimensional modeling of basal plane dislocations in 4H-SiC single crystal grown by the physical vapor transport method, Crystal Growth & Design, 14(3), 1272-1278, 2014.

42.   B. Gao*, K. Kakimoto, Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature, Journal of Crystal Growth, 396, 7-13, 2014.

41.   B. Gao*, K. Kakimoto, Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals, Journal of Crystal Growth, 392, 92-97, 2014.

40.   B. Gao*, K. Kakimoto, Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model, Journal of Crystal Growth, 386, 215-219, 2014.

39.   K. Jiptner, Bing Gao, H. Harada, Y. Miyamura, M. Fukuzawa, K. Kakimoto, T. Sekiguchi, Thermal stress induced dislocation distribution in directional solidification of Si for PV application, Journal of Crystal Growth, 408, 19-24, 2014.

38.   T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, K. Kakimoto, Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory, Journal of Crystal Growth, 385, 95-99, 2014.

37.   Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi, Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization, Journal of Crystal Growth, 401,133-136, 2014

 

2013

36.   B. Gao*, K. Kakimoto, Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in [001] and [111] directions, Journal of Applied Crystallography, 46, 1771-1780, 2013.

35.   B. Gao*, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto，Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions, Crystal Growth & Design, 13, 2661–2669, 2013.

34.   B. Gao*, K. Kakimoto, Numerical investigation of the influence of cooling flux on the generation of dislocations in cylindrical mono-like silicon growth, Journal of Crystal Growth, 384, 13–20, 2013.

33.   B. Gao*, S. Nakano, K. Kakimoto, Reduction of Oxygen Impurity in Multicrystalline Silicon Production, International Journal of Photoenergy, 908786 (1-6), 2013.

32.   B. Gao*, S. Nakano, K. Kakimoto, Highly efficient and stable implementation of the Alexander-Haasen model for numerical analysis of dislocation in crystal growth, Journal of Crystal Growth, 369,32–37, 2013.

31.   B. Gao*, K. Kakimoto, Effect of the inclusion of transparency on the thermal field and interface shape in long-term sublimation growth of SiC crystals, Journal of the Japanese Association for Crystal Growth, 40(1), 2013.

30.   S. Nakano, B. Gao, K. Kakimoto, Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufacture, Journal of Crystal Growth, 375, 62-66, 2013.

29.   M. Inoue, S. Nakano, H. Harada, Y. Miyamura, B. Gao, Y. Kangawa, K. Kakimoto, Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process, International Journal of Photoenergy, 2013,706923, 2013.

28.   Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J.Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, K. Kakimoto, 10 cm diameter mono cast Si growth and its characterization, Solid State Phenomena, 205-206, 89-93, 2013.

 

2012

27.   B. Gao*, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Dislocation Analysis of a New Method for Growing Large-size Crystals of Monocrystalline Silicon Using a Seed Casting Technique, Crystal Growth & Design, 12 (12), 6144–6150, 2012.

26.   B. Gao*, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Anisotropic thermal stress simulation with complex crystal-melt interface evolution for seeded growth of monocrystalline silicon, Crystal Growth & Design, 12 (11), 5708–5714, 2012.

25.   B. Gao*, S. Nakano, K. Kakimoto, Influence of back-diffusion of iron impurity on lifetime distribution near the seed-crystal interface in seed cast-grown monocrystalline silicon by numerical modeling, Crystal Growth & Design, 12(1), 522−525, 2012.

24.   B. Gao*, S. Nakano, K. Kakimoto, The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystals, Journal of Crystal Growth, 338(1), 69-74, 2012.

23.   B. Gao*, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace, Journal of Crystal Growth, 352(1),47-52, 2012.

22.   K. Kakimoto, B. Gao, S. Nakano, Y. Kangawa, H. Harada, Toward realization of silicon solar cells with high efficiency, Journal of the Japanese Association for Crystal Growth, 39(3), 135-141, 2012.

21.   T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, Y. Kangawa, K. Kakimoto, Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory, Journal of Crystal Growth, 352(1), 177-180, 2012.

20.   F. Inui, B. Gao, S. Nakano, K. Kakimoto, Numerical analysis of the velocity of SiC growth by the top seeding method, Journal of Crystal Growth, 348(1),71-74, 2012.

19.   K. Kakimoto, B. Gao, T. Shiramomo, S. Nakano, S. Nishizawa, Analysis of growth velocity of SiC growth and by the Physical vapor transport method, Materials Science Forum, 717 – 720,25-28, 2012.

 

2011

18.   B. Gao*, S. Nakano, K. Kakimoto, Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace, Journal of Crystal Growth, 318 (1), 255-258, 2011.

17.   B. Gao*, S. Nakano, K. Kakimoto, Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace, Journal of Crystal Growth, 314(1), 239-245, 2011.

16.   B. Gao*, S. Nakano, K. Kakimoto, Reducing impurities of multicrystalline silicon in a unidirectional solidification furnace for solar cells, Journal of The Minerals, Metals & Materials Society (JOM), 63(10), 43-46, 2011.

15.   B. Gao, D.H. Park and S.O. Park, Stability analysis of boundary layer over a hump using PSE, Fluid Dynamics Research, 43(5), 2011.

14.   K. Kakimoto, B. Gao, S. Nakano, Y. Kangawa, Relationship between heat and mass transfer and growth velocity during growth of bulk crystals. Journal of the Japanese Association for Crystal Growth, 38(2), 2011.

13.   K. Kakimoto, B. Gao, T. Shiramomo, S. Nakano, Shi-ichi Nishizawa, Thermodynamic analysis of SiC polytype growth by physical vapor transport method, Journal of Crystal Growth, 324 (1), 78-81, 2011.

12.   S. Nakano, X.J. Chen, B. Gao, K. Kakimoto, Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells, Journal of Crystal Growth, 2010, 318(1), 280-282, 2011.

11.   K. Kakimoto, B. Gao, S. Nakano, Numerical analysis of light elements transport in a unidirectional solidification furnace, Phys. Status Solidi C 8 (3), 659–661, 2011.

 

2010

10.   B. Gao*, S. Nakano, K. Kakimoto, Global simulation of coupled carbon and oxygen transport in a unidirectional solidification furnace for solar cells, Journal of The Electrochemical Society, 157(2), H153-H159, 2010.

9.     B. Gao*, X.J. Chen, S. Nakano, K. Kakimoto, Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells, Journal of Crystal Growth, 312(9), 1572–1576, 2010.

8.     B. Gao*, K. Kakimoto, Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth, Journal of Crystal Growth, 312(20), 2972-2976, 2010.

7.     B. Gao*, X.J. Chen, S. Nakano, S. Nishizawa, K. Kakimoto, Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation, Journal of Crystal Growth, 312(22), 3349-3355, 2010.

6.     B. Gao*, S. Nakano, K. Kakimoto, Numerical analysis of Oxygen and carbon transport in a unidirectional solidification furnace, ECS Transactions, 27(1), 1015-1020, 2010.

 

2009-

5.     B. Gao*, S. Nakano, K. Kakimoto, Numerical analysis of impurity transport in a unidirectional solidification furnace for multicrystalline silicon, Journal of the Japanese Association for Crystal Growth, 36(4), 2009.

4.     K. Kakimoto, H. Matsuo, S. Hisamatsu, B. Ganesh, B. Gao, X. J. Chen, L. J. Liu, H. Miyazawa, Y. Kangawa, Numerical Analysis of mc-Si Crystal Growth, Solid State Phenomena, Vols. 156-158, 193-198, 2009.

3.     B. Gao, S.O. Park, Compressible parabolized stability equation in curvilinear coordinate system and integration, KSAS International Journal, 7(2), 155-174, 2006.

2.     B. Gao*, J. Hang, Z. B. Lin, D. H. Guo, J. M. Lin, The experiment exploration of catalyst effects on aerodynamic heat in real gas effects, Experiments and Measurements in Fluid Mechanics, 18(2), 30-33, 2004. (in Chinese)

1.     D.H. Guo, B. Gao, Z.B. Lin, The exploration of a new kind of free-released balance in impulsive wind tunnels, Experiments and Measurements in Fluid Mechanics, 17(1),40-43, 2003. (in Chinese)

著作

4.    Bing Gao, Koichi Kakimoto,, “Carbon Impurity in Crystalline Silicon” in Handbook of Photovoltaic Silicon, Chapter 4, Editor: Deren Yang, Springer, January, 2019.

3.    Bing Gao, Koichi Kakimoto, “Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells” in Defects and Impurities in Silicon Materials, Chapter 9, Editor: Hisako Niko, Springer, January, 2015.

2.    Koichi Kakimoto, Bing Gao, “Fluid dynamics - modelling and analysis” in Handbook of Crystal Growth, 2nd Edition, Bulk Crystal Growth, Chapter 3, volume 2B, Editor: Peter Rudolph, Elsevier, 17 Dec, 2014.

1.    Koichi Kakimoto, Bing Gao, “Modern Aspects of Czochralski and Multicrystalline Silicon Crystal Growth” in Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals, Chapter 1, Editors: Gudrun Kissinger and Sergio Pizzini, CRC Press, Taylor & Francis, December 9, 2014.

所获荣誉

7.    优秀学者奖，第一届人工晶体青年学术会议，苏州，2019.11

6.    Ulrich Goesele Young Scientist Award, Germany, 2015

5.    Top 25 Hottest Articles, Journal of Crystal Growth, ScienceDirect, April-June, 2014

4.    Top 25 Hottest Articles, Journal of Crystal Growth, ScienceDirect, October-December, 2014

3.    Young Researcher Awards, Japanese Association for Crystal Growth, Japan, 2010

2.    Top 25 Hottest Articles, Journal of Crystal Growth, ScienceDirect, April-June, 2010

1.    Top 25 Hottest Articles, Journal of Crystal Growth, ScienceDirect, October-December, 2010