1. Thin film synthesis，including pulsed laser deposition (PLD), magnetic sputtering.
1.1 Pulsed Laser Deposition or PLD is one of the best ways to prepare high-quality thin films, especially for oxide films. A detailed introduction of PLD can be found https://onlinelibrary.wiley.com/doi/book/10.1002/0470052120。
By PLD, we can atomically synthesize complex oxide, heterostructures, and superlattices, the structure of our recent work of LaMnO3/SrIrO3 superlattice (Phys. Rev. Research 2, 033496 (2020). https://journals.aps.org/prresearch/abstract/10.1103/PhysRevResearch.2.033496) can be seen:
1.2 Magnetic Sputtering is also one of the best ways to prepare high-quality thin films, especially for metals.
Figure source: https://www.sciencedirect.com/topics/materials-science/magnetron-sputtering
2. Strongly correlated electronic materials, including colossal magnetoresistance materials and high-temperature superconducting materials.
The electron correlation can not be ignored in strongly correlated electronic materials, which accounts for many fancy physical properties and provides the best platform to study the interaction among lattice, orbit, charge, and spin.
2.1 Colossal Magnetoresistance (CMR), the resistivity of manganite can change drastically under a magnetic field. See wiki for more: https://en.wikipedia.org/wiki/Colossal_magnetoresistance
2.2 High Tc Superconductor, (HTS). See wiki for more: https://en.wikipedia.org/wiki/High-temperature_superconductivity
3. The magnetism and magnetotransport property of magnetic oxides and their heterostructures.
The study of magnetic materials plays key roles in spintronics, we focus on the interfacial effects on the magnetic and magnetotransport properties, such as:
3.1 Interfacial spin orbit coupling (SOC）induced the change of anisotropic magnetoresistance (AMR).
(Applied Physics Reviews, 2020, 7(1): 0-011401. https://aip.scitation.org/doi/10.1063/1.5124373)
3.2 Defect control of anomalous Hall effect, the topological Hall effect like artificial signal.
(Phys. Rev. B,2020, 102, 220406(R). https://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.220406)
3.3 Interfacial induced enhancement of ferromagnetism.
(ACS Appl. Mater. Interfaces 2017, 9, 51, 44931–44937. https://pubs.acs.org/doi/abs/10.1021/acsami.7b15364)
3.4 Matrix-dependent magnetic property。
(Materials Research Letters, 2019, 7(10): 399-404. https://www.tandfonline.com/doi/full/10.1080/21663831.2018.1482840)
4. Topological domain structures and novel domain walls in ferroelectric and multiferroic thin films.
4.1 The growth of self-assembled ferroelectric nanoislands.
(Nanoscale, 2019, 11, 20514-20521. https://pubs.rsc.org/en/content/articlelanding/2019/nr/c9nr05094a/unauth#!divAbstract)
4.2 Topological domain structures in self-assembled ferroelectric nanoislands.
(Mat. Res. Lett. 2019, 7, 399-404. https://www.tandfonline.com/doi/full/10.1080/21663831.2019.1619631)
4.3 Protocal device application of domain walls in self-assembled ferroelectric nanoislands.
(Nat Nanotech. 2018, 13, 947-952. https://www.nature.com/articles/s41565-018-0204-1)
4.4 Magnetoelectric property in ferromagnetic/ferroelectric heterostructures.
(J. Appl. Phys. 2019, 126, 075301. https://aip.scitation.org/doi/abs/10.1063/1.5108842)
