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Solid-State Electronics
基本信息
期刊名称 Solid-State Electronics
SOLID STATE ELECTRON
期刊ISSN 0038-1101
期刊官方网站 https://www.sciencedirect.com/journal/solid-state-electronics
是否OA No
出版商 Elsevier Ltd
出版周期 Monthly
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始发年份 1960
年文章数 175
影响因子 1.4(2023)  scijournal影响因子  greensci影响因子
中科院SCI期刊分区
大类学科 小类学科 Top 综述
物理4区 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气4区
PHYSICS, APPLIED 物理:应用4区
PHYSICS, CONDENSED MATTER 物理:凝聚态物理4区
CiteScore
CiteScore排名 CiteScore SJR SNIP
学科 排名 百分位 3.0 0.348 0.655
Engineering
Electrical and Electronic Engineering
419/797 47%
Physics and Astronomy
Condensed Matter Physics
245/434 43%
Materials Science
Materials Chemistry
182/317 42%
Materials Science
Electronic, Optical and Magnetic Materials
169/284 40%
补充信息
自引率 7.1%
H-index 87
SCI收录状况 Science Citation Index Expanded
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PubMed Central (PMC) http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0038-1101%5BISSN%5D
投稿指南
期刊投稿网址 http://ees.elsevier.com/sse/
收稿范围
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design with appropriate experimental backup; (2) optical, electrical, morphological characterization techniques and parameter extraction with experimental application to real devices; (3) device fabrication and synthesis, including device-related new materials growth, electro-optical characterization and performance evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) modeling and simulation of solid-state devices and processes with appropriate experimental backup; (6) nanoscale electronic and optoelectronic devices for various applications, including photovoltaics, sensing, micro- and nano-mechanical (MEMS/NEMS) systems, quantum computation and communication.

Important: Given the wide availability of TCAD simulation packages (Synopsys, Silvaco, etc.) device simulation papers should be coupled with experiment, revolutionary concepts or novel analytical approaches. Pure simulation papers are not considered. Papers on materials growth and characterization should be relevant to a current or future device technology.

Types of contributions: Original research papers, letters (intended for high-impact and high-quality short papers) and invited review papers (please contact the editors prior to submission). Solid-State Electronics does not publish notes or brief communications.

Keywords: solid state electronics, field effect transistor, semiconductor (Si, SOI, Ge, III-V, 2D, etc.), nano-devices, new device concepts, fabrication, characterization, modeling, memories, high-voltage devices, photovoltaics, MEMS/NEMS
收录体裁
 Original research papers
letters
invited review papers 
投稿指南 https://www.sciencedirect.com/journal/solid-state-electronics/publish/guide-for-authors
投稿模板
参考文献格式 https://www.elsevier.com/journals/solid-state-electronics/0038-1101/guide-for-authors
编辑信息
Editors
Enrique Calleja
Polytechnic University of Madrid Department of Electronic Engineering, 28040, Madrid, Spain, Fax: +34 91 3367323 
COMUE University Grenoble Alpes, Ref: LPCS-SSE, 46 av. Felix Viallet, F-38031 Grenoble Cedex 1, France, Fax: +33 476 85 50 54 
Brown University School of Engineering, Box D 182 Hope Street, Providence, Rhode Island, 02912-9037, United States 

Kuniyuki Kakushima

Tokyo Institute of Technology - Suzukakedai Campus, 226-8503, Yokohama, Japan 
Editorial Advisory Board

Giorgio Baccarani

University Hospital of Bologna Sant'Orsola-Malpighi Polyclinic, Bologna, Italy

Jagadish Chennupati

Australian National University, Canberra, Australia

Jean-Pierre Colinge

Luigi Colombo

Texas Instruments Inc, Dallas, Texas, United States

Gerard Ghibaudo

Graduate School of Physics Electronics and Materials, Grenoble, France

Gennady Gildenblat

Arizona State University, Tempe, Arizona, United States

Steve Hall

University of Liverpool, Liverpool, United Kingdom

Tomihiro Hashizume

Hitachi Ltd Center for Exploratory Research, Hiki-gun, Japan

Ru Huang

Peking University, Beijing, China

Sungwoo Hwang

Samsung Advanced Institute of Technology, Suwon, Korea, Republic of

Stacia Keller

University of California Santa Barbara, Santa Barbara, California, United States

Jong-Ho Lee

Seoul National University, Seoul, Korea, Republic of

Colin McAndrew

Freescale Semiconductor Inc, Tempe, Arizona, United States

Jean-Michel Sallese

Federal Polytechnic School of Lausanne, Lausanne, Switzerland

Jurriaan Schmitz

University of Twente, Enschede, Netherlands

Alan Seabaugh

University of Notre Dame, Notre Dame, Indiana, United States

Michael Shur

Rensselaer Polytechnic Institute, Troy, New York, United States

Andreas Waag

Braunschweig University of Technology, Braunschweig, Germany

Hei Wong

City University of Hong Kong, Kowloon, Hong Kong


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