Semiconductors is a peer-reviewed journal that covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, devices based on semiconductors and nanostructures including lasers, semiconductor surface physics, and structural defects in semiconductors. The journal welcomes manuscripts from all countries. Previously focused on translation, the journal now has the aim to become an international publication and accepts manuscripts originally submitted in English from all countries, along with translated works.

EDITOR-IN-CHIEF
Robert A. Suris
Dr. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
DEPUTY EDITOR-IN-CHIEF
Vadim V. Emtsev
Cand. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
MANAGING EDITOR
Konstantin D. Tsendin
Dr. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
EDITORIAL BOARD
Zhores I. Alferov
Dr. Sci. (Phys.-Math.), St. Petersburg Academic University, St. Petersburg, Russia
Alexander A. Andronov
Dr. Sci. (Phys.-Math.), Institute for Physics of Microstructures, Nizhny Novgorod, Russia
Alexander A. Aseev
Dr. Sci. (Phys.-Math.), Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
Levon V. Asryan
Dr. Sci. (Phys.-Math.), Virginia Polytechnic Institute and State University, USA
Nikita S. Averkiev
Dr. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Michael I. Dyakonov
Dr. Sci. (Phys.-Math.), University of Montpellier, France
Alexei A. Gippius
Dr. Sci. (Phys.-Math.), Lebedev Physical Institute, Moscow, Russia
Yuri V. Gulyaev
Dr. Sci. (Phys.-Math.), Kotelnikov Institute of Radioengineering and Electronics, Moscow, Russia
Vladimir I. Ivanov-Omskii
Dr. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Semen G. Konnikov
Dr. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Peter S. Kopiev
Dr. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Zaharius F. Krasil'nik
Dr. Sci. (Phys.-Math.), Institute for Physics of Microstructures, Nizhny Novgorod, Russia
Alexander V. Latyshev
Dr. Sci. (Phys.-Math.), Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
Nikolai N. Ledentsov
Dr. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Sergei A. Nemov
Dr. Sci. (Phys.-Math.), Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
Boris I. Shklovskii
Dr. Sci. (Phys.-Math.), University of Minnesota, USA
Robert F. Suris
Dr. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Yuri M. Tairov
Dr. Sci. (Phys.-Math.), The First Electrotechnical University, St. Petersburg, Russia
Andrei G. Zabrodskii
Dr. Sci. (Phys.-Math.), Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Staff Editor
N.N. Zhukova