Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.

The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers microelectronics device, circuits and systems. This topic includes but is not limited to

• Analog, digital, mixed, and RF integrated circuits and related design methodologies
• Semiconductor memory, such as RRAM, MRAM, FLASH, PCRAM , etc
• Microelectronic devices , modeling and device physics
• Semiconductor optoelectronic devices and integrated technology
• Wide band gap semiconductor materials, devices and circuits
• TSV, TGV, 3D-ICs, SIP and related technology
• Integrated circuit design automation technology ( EDA )
• SOC, NoC design, analysis and test
• Artificial intelligence integrated circuits and design methodology
• Testing, design for testability (DFT), built-in self-test for integrated circuits
• Integrated circuit hardware security
• Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, TFET, NC-FET ,etc.

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Original papers, case studies, reports of conferences and meetings, book reviews and letters to the Editors. 

Editor-in-Chief
E.G. Friedman
University of Rochester Department of Electrical and Computer Engineering, Computer Studies Building, Rochester, New York, NY 14627, United States, Fax: +1 585 506 0074Phone Phone +1 585 275 1022 Email E.G. Friedman
Special Issue Editor
Y. Wang
Tsinghua University, Beijing, China Email Y. Wang
Editorial Board
A. Ahmadi
University of Windsor, Windsor, Ontario, Canada Email A. Ahmadi
M. Alioto
National University of Singapore, Singapore, Singapore Email M. Alioto
M. N. Bojnordi
The University of Utah, Salt Lake City, Utah, United States Email M. N. Bojnordi
C.H. Chang
Nanyang Technological University, Singapore, Singapore Email C.H. Chang
M.H. Chowdhury
University of Missouri Kansas City, Kansas City, Missouri, United States Email M.H. Chowdhury
I.B. Dhaou
University of Monastir Higher Institute of Computer Science and Mathematics of Monastir, Monastir, Tunisia Email I.B. Dhaou
A El-Moursy
University of Sharjah, Sharjah, United Arab Emirates Email A El-Moursy
M. El-Moursy
Mentor Graphics Egypt, Heliopolis, Egypt Email M. El-Moursy
I.M. Elfadel
Khalifa University Department of Electrical Engineering and Computer Science, Abu Dhabi, United Arab Emirates Email I.M. Elfadel
A. Fish
Bar-Ilan University, Ramat Gan, Israel Email A. Fish
J.S. Friedman
University of Texas at Dallas, Richardson, Texas, United States Email J.S. Friedman
F. Frustaci
University of Calabria Department of Computer Engineering Modelling Electronics and Systems, Rende, Italy Email F. Frustaci
B. Ghavami
Shahid Bahonar University of Kerman, Kerman, Iran, Islamic Republic of Email B. Ghavami
S. Ghoreishizadeh
Imperial College London, London, United Kingdom Email S. Ghoreishizadeh
P. Giard
School of Engineering and Applied Technology, Montreal, Quebec, Canada Email P. Giard
G. Giustolisi
University of Catania, Catania, Italy Email G. Giustolisi
N. Gong
University of South Alabama, Mobile, Alabama, United States Email N. Gong
X. Guo
Lehigh University, Bethlehem, Pennsylvania, United States Email X. Guo
M. R. Haider
University of Alabama at Birmingham, Birmingham, Alabama, United States Email M. R. Haider
H. Heidari
University of Glasgow, Glasgow, Scotland, United Kingdom Email H. Heidari
B. Hu
Broadcom Ltd, Irvine, California, United States Email B. Hu
Z. Ignjatovic
University of Rochester, Rochester, United States Email Z. Ignjatovic
R. Jakushokas
QUALCOMM Inc, San Diego, California, United States Email R. Jakushokas
H. Jiao
Peking University, Beijing, China Email H. Jiao
B.K. Kaushik
Indian Institute of Technology Roorkee, India Email B.K. Kaushik
F. Khateb
Brno University of Technology, Brno, Czech Republic Email F. Khateb
S. Kose
University of South Florida - Sarasota-Manatee, Sarasota, Florida, United States Email S. Kose
F. Kurdahi
University of California Irvine, Irvine, California, United States Email F. Kurdahi
V. Kursun
Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong KongEmail V. Kursun
S. Kvatinsky
Technion Israel Institute of Technology Faculty of Electrical Engineering, Haifa, IsraelEmail S. Kvatinsky
X. Meng
Email X. Meng
B. Mohammad
Khalifa University of Science Technology - Abu Dhabi Campus, Abu Dhabi, United Arab Emirates Email B. Mohammad
H. Mostafa
Cairo University, Giza, Egypt Email H. Mostafa
A. Muhtaroğlu
Middle East Technical University, Turkey Email A. Muhtaroğlu
D. Nirmal
Karunya Institute of Technology and Sciences, Coimbatore, India Email D. Nirmal
D. Pamunuwa
University of Bristol, Bristol, United Kingdom Email D. Pamunuwa
I. Partin-Vaisband
University of Rochester, Rochester, New York, United States Email I. Partin-Vaisband
V.F. Pavlidis
The University of Manchester, Manchester, United Kingdom Email V.F. Pavlidis
D.G. Perera
University of Colorado at Colorado Springs, Colorado Springs, Colorado, United StatesEmail D.G. Perera
C. Psychalinos
University of Patras Department of Physics, Patras, Greece Email C. Psychalinos
D. Rossi
University of Bologna - Rimini Campus, Rimini, Italy Email D. Rossi
I. Savidis
Drexel University, Philadelphia, Pennsylvania, United States Email I. Savidis
G. Scotti
University of Rome La Sapienza, Roma, Italy Email G. Scotti
R. Secareanu
Freescale Semiconductor Inc, Tempe, Arizona, United States Email R. Secareanu
S. Shekhar
Intel Corp Hawthorn Farm, Hillsboro, Oregon, United States Email S. Shekhar
G.C. Sirakoulis
Democritus University of Thrace Department of Electrical and Computer Engineeirng, Xanthi, Greece Email G.C. Sirakoulis
J.E. Stine, Jr.
Oklahoma State University Stillwater, Stillwater, Oklahoma, United States Email J.E. Stine, Jr.
Y. Sun
Email Y. Sun
S. A. Tajalli
Federal Polytechnic School of Lausanne, Lausanne, Switzerland Email S. A. Tajalli
C.S. Tan
Nanyang Technological University, Singapore, Singapore Email C.S. Tan
B. Taskin
Drexel University, Philadelphia, Pennsylvania, United States Email B. Taskin
A. Teman
Ben-Gurion University of the Negev, Be'er Sheva, Israel Email A. Teman
H. Thapliyal
University of Kentucky, Lexington, Kentucky, United States Email H. Thapliyal
A. Todri-Sanial
University of Montpellier, Montpellier, France Email A. Todri-Sanial
B. Vaisband
University of California Los Angeles Electrical and Computer Engineering Department, Los Angeles, California, United States Email B. Vaisband
D. Velenis
Leuven, Belgium Email D. Velenis
U. Vishnoi
Marvell Semiconductor Inc, Santa Clara, California, United States Email U. Vishnoi
I. Vourkas
Federico Santa Maria Technical University, Valparaiso, Chile Email I. Vourkas
C. Wang
Huazhong University of Science and Technology, Wuhan, China Email C. Wang
J. Wang
University of South Alabama, Mobile, Alabama, United States Email J. Wang
R. Weerasekera
University of Bristol School of Sociology Politics and International Studies, Bristol, United Kingdom Email R. Weerasekera
S. Wimer
Bar-Ilan University, Ramat Gan, Israel Email S. Wimer
J. Xie
Villanova University College of Engineering, Villanova, Pennsylvania, United States Email J. Xie
K. Xu
University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, China Email K. Xu
H. Yu
Southern University of Science and Technology, Shenzhen, China Email H. Yu
W. Yu
Old Dominion University, Norfolk, Virginia, United States Email W. Yu
Z. Zhang
University of Pennsylvania, Philadelphia, Pennsylvania, United States Email Z. Zhang
Z. Zhu
Xidian University, Xian, China Email Z. Zhu