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Materials Science in Semiconductor Processing
基本信息
期刊名称 Materials Science in Semiconductor Processing
MAT SCI SEMICON PROC
期刊ISSN 1369-8001
期刊官方网站 https://www.sciencedirect.com/journal/materials-science-in-semiconductor-processing
是否OA No
出版商 Elsevier Ltd
出版周期 Bimonthly
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始发年份
年文章数 635
影响因子 4.2(2023)  scijournal影响因子  greensci影响因子
中科院SCI期刊分区
大类学科 小类学科 Top 综述
工程技术3区 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气3区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合3区
PHYSICS, APPLIED 物理:应用3区
PHYSICS, CONDENSED MATTER 物理:凝聚态物理3区
CiteScore
CiteScore排名 CiteScore SJR SNIP
学科 排名 百分位 8.0 0.732 0.992
Engineering
Mechanical Engineering
87/672 87%
Physics and Astronomy
Condensed Matter Physics
59/434 86%
Engineering
Mechanics of Materials
60/398 85%
Materials Science
General Materials Science
100/463 78%
补充信息
自引率 4.8%
H-index 49
SCI收录状况 Science Citation Index Expanded
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PubMed Central (PMC) http://www.ncbi.nlm.nih.gov/nlmcatalog?term=1369-8001%5BISSN%5D
投稿指南
期刊投稿网址 https://www.editorialmanager.com/mssp/default.aspx
收稿范围
Functional Materials for (Opto)electronics, Sensors, Detectors, and Green Energy.

Materials Science in Semiconductor Processing Mrovides a unique forum for the discussion of novel processing, applications, and theoretical studies of functional semiconductor materials and devices. Each issue aims to provide a snapshot of current insights, new achievements, breakthroughs, perspectives, and future trends in material sciences for such diverse fields as advanced electronics and opto-electronics, sensors and detectors, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film deposition and growth technology, hybrid and quantum materials, device fabrication technology, and modelling, which are the backbone of advanced semiconductor processing and applications.


Coverage will include: advanced lithography, etching, doping, annealing, and thin film processing for submicron and nano devices; material and device failure, reliability, damage evolution, and related issues; advanced chemical and physical vapor deposition; advanced metallization and interconnect schemes; compound semiconductor materials and processing; new dielectrics and non-oxide materials and their applications; (macro)molecular, hybrid, heterostructure, and quantum materials, devices, and processing; molecular dynamics, ab-initio methods, Monte Carlo simulations, data intensive and machine-learning based approaches, etc.; new materials and processes for discrete and integrated circuits; advanced electronic packaging materials and processes; magnetic materials and spintronics; crystal growth technology and mechanism; intrinsic impurities and defects of materials. Pure device simulation and modelling without connection to experiment is not within the aim and scope of this journal.

Submit your manuscript
收录体裁
Original research papers, reviews, letters to the editor.
投稿指南 https://www.sciencedirect.com/journal/materials-science-in-semiconductor-processing/publish/guide-for-authors
投稿模板
参考文献格式 https://www.elsevier.com/journals/materials-science-in-semiconductor-processing/1369-8001/guide-for-authors
编辑信息
Editor in Chief
Professor Steven M. Durbin
Western Michigan University, United States
Editors

Professor Kuan Yew Cheong

Universiti Sains Malaysia School of Materials and Mineral Resources Engineering, Malaysia

Dr. Aracely Hernández Ramírez

Autonomous University of Nuevo Leon Faculty of Chemical Sciences, Mexico

Professor Masaya Ichimura

Nagoya Institute of Technology, Japan

Dr. Giuliana Impellizzeri

National Research Council, Italy

Dr. Jon Major

University of Liverpool, United Kingdom

Prof. Dr. Andre Schleife, PhD

University of Illinois at Urbana-Champaign Department of Materials Science and Engineering, United States Electronic structure, first principles, theoretical spectroscopy, femto-second electron dynamics 
Associate Editor
The University of Texas at El Paso Department of Electrical and Computer Engineering, El Paso, Texas, United States photovoltaics, perovskites, CZT radiation detector material
Chair of the International Editorial Board

Dr. Aloysius F. Hepp, Editor-in-Chief Emeritus

NASA John H Glenn Research Center, United States
Special Issues Editor
International Editorial Board

Professor M.S. Aida

University of Constantine 1, Algeria

Dr. James Aldous

University of Cambridge, United Kingdom

Professor Delaina A. Amos

University of Louisville, United States

Dr. Annick Anctil

Michigan State University, United States

Dr. Christopher Bailey

Old Dominion University, United States

Dr. Andrew R. Barron

Rice University, United States

Professor Kanisha Biswas

Jawaharlal Nehru Centre for Advanced Scientific Research, India

Dr. Hartmut Bracht

University of Münster, Germany

Dr. Xian-An (Andrew) Cao

West Virginia University, United States

Dr. L.S. Cavalcante

State University of Piaui Natural Sciences Centre, Brazil

Dr. M.V.S. Chandrashekhar

University of South Carolina, United States

Professor Albert Chawanda

Midlands State University, Zimbabwe

Professor Lung-Chien Chen

National Taipei University of Technology, Taiwan

Dr. Russell R. Chianelli

University of Texas at El Paso, United States

Professor Oana Cojocaru-Mirédin

Max Planck Institute for Iron Research GmbH, Germany

Professor Ana Cros Stötter

University of Valencia, Spain

Professor Carl Cui

The University of Sydney, Australia

Dr. Mmantsae Diale

University of Pretoria Department of Physics, South Africa

Dr. Ray Duffy

University College Cork National University of Ireland, Ireland

Professor Ken Durose

University of Liverpool, United Kingdom

Professor Moshe Eizenberg

Technion Israel Institute of Technology, Israel

Professor Ayse Erol

Istanbul University, Turkey

Professor Mark Fink

Tulane University, United States

Dr. Dennis J. Flood

Natcore Technology, United States

Dr. Mariana Amorim Fraga

Technological Institute of Aviation, Brazil

Dr. Alex Freundlich

University of Houston, United States

Dr. Karol Fröhlich

Slovak Academy of Sciences, Slovakia

Professor Louis J. Guido

Virginia Tech University Bookstore, United States

Professor Parameswar Hari

The University of Tulsa, United States

Prof. Dr. Zsolt Horvath

Hungarian Academy of Sciences, Hungary

Professor W. Chris Hughes

James Madison University, United States

Professor Masaya Ichimura

Nagoya Institute of Technology, Japan

Dr. Michael Jin

Johns Hopkins University Applied Physics Laboratory Information Group, United States

Dr. Richard Paul Owen Jones

Anglia Ruskin University Global Sustainability Institute, United Kingdom

Dr. Satoshi Kaneco

Mie University Graduate School of Engineering Faculty of Engineering Department of Chemistry for Materials, Japan

Professor Zhenhui Kang

Soochow University, China

Dr. Manish Keswani

University of Arizona, United States

Professor Malle Krunks

Tallinn University of Technology, Estonia

Professor Clifford P. Kubiak

University of California San Diego Department of Chemistry and Biochemistry, United States

Professor Prashant N. Kumta

University of Pittsburgh, United States

Dr. Marian Lehocky

Tomas Bata University in Zlin, Czech Republic

Professor Markku Leskalä

University of Helsinki, Finland

Professor Xiuling Li

University of Illinois at Urbana-Champaign, United States

Professor Oleg Lupan

Technical University of Moldova, Moldova

Dr. Tae Young Ma

Gyeongsang National University, The Republic of Korea

Dr. Jeffrey Maranchi

Johns Hopkins University Applied Physics Laboratory Information Group, United States

Dr. Ricardo Marotti Priero

University of the Republic Uruguay, Uruguay

Professor Miguel Angel Meléndez-Lira

Center for Research and Advanced Studies of the National Polytechnic Institute Physics Department, Mexico

Dr. Enrico Napolitani

University of Padua, Italy

Dr. Michael Nolan

University College Cork National University of Ireland, Ireland

Dr. Jozef Novák

Slovak Academy of Sciences, Slovakia

Dr. Nurxat Nuraje

TEXAS TECH UNIVERSITY, United States

Dr. Michael Osofsky

US Naval Research Laboratory, United States

Dr. Jozef Osvald

Slovak Academy of Sciences, Slovakia

Dr. Hyunwoong Park

Kyungpook National University, The Republic of Korea

Dr. Albena Paskaleva

Bulgarian Academy of Sciences, Bulgaria

Dr. Sebastian Patzig-Klein

RENA Technologies GmbH Solar Technologie Center Freiburg, Germany

Dr. Ioannis Poulios

Aristotle University of Thessaloniki, Greece

Dr. Aswini Pradhan

Norfolk State University, United States

Dr. Peter Psarras

Stanford University, United States

Dr. Ryne Raffaelle

Rochester Institute of Technology, United States

Dr. Manoj Kumar Ram

University of South Florida, United States

Dr. Thomas Riedl

University of Wuppertal, Germany

Professor Judy Rorison

University of Bristol, United Kingdom

Professor Mehmet Sahiner

Seton Hall University, United States

Dr. David Schiraldi

Case Western Reserve University, United States

Dr. Azzouz Sellai

Sultan Qaboos University, Oman

Dr. Tejinder Singh

Intel Corp Hawthorn Farm, United States

Professor Elias Stathatos

University of the Peloponnese Department of Electrical and Computer Engineering, Greece

Dr. Rajagopalan Thiruvengadathan

Amrita Vishwa Vidyapeetham, India

Dr. Joanna Trojan-Piegza

Wroclaw University of Science and Technology, Poland

Dr. Abdulmecit Türüt

Istanbul Medeniyet University, Turkey

Dr. Subramaniam Velumani

Center for Research and Advanced Studies of the National Polytechnic Institute, MexicoTel :+52 (55) 5747 4001(Dir) & sec 4002 Fax :+52 (55) 5747 4003 1. Velumani Subramaniam PhD velu@cinvestav.mx Coordinador de Relaciones Internacionales y Profesor Investigador en Ingenieria Electrica(SEES), Centro de Investigacion y de Estudios Avanzados del I.P.N.(CINVESTAV), Av. Instituto Politecnico Nacional # 2508 Col. San Pedro Zacatenco 07360, Mexico D.F. Tel :+52 (55) 5747 4001(Dir) & sec 4002 Fax :+52 (55) 5747 4003 http://cori.cinvestav.mx/Velumani

Dr. Purakh Raj Verma

GlobalFoundries Inc Sunnyvale, United States

Professor James Williams

Australian National University, Australia

Professor Maggie Xia

The University of British Columbia, Canada

Dr. Lidong Zhao

Beihang University, China

Dr. Tsvetanka Zheleva

US Army Research Laboratory, United States

Dr. Rongkun Zheng

The University of Sydney, Australia


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