The Journal of Crystal Growth offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.

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Original research work
Priority communications

Principal Editor
T.F. Kuech
University of Wisconsin-Madison Department of Chemical and Biological Engineering, 1415 Engineering Drive, Madison, Wisconsin, 53706-1607, United States, Fax: +1 608 262 3782 Phone +1 608 263 2922 Email T.F. Kuech
Editorial Board
R.S. Feigelson
Stanford University Geballe Laboratory for Advanced Materials, 476 Lomita Mall, Stanford, California, CA 94305-4045, United States, Fax: +1 650 723 3044 Phone +1 650 723 4007 Email R.S. Feigelson
K. Nakajima
Tohoku University Institute for Materials Research, 2-1-1 Katahira, 980-8577, Sendai, Japan, Fax: +81 22 215 2006 Phone +81 22 215 2005 Email K. Nakajima
G.B. Stringfellow
University of Utah College of Engineering, 50 S. Central Campus Dr., Salt Lake City, Utah, 84112-9202, United States, Fax: +1 801 581 8692 Phone +1 801 581 8387 Email G.B. Stringfellow
Associate Editors
S. Akamatsu
Paris Institute of Nanosciences, 4 Place Jussieu, 75252, Paris, France Email S. Akamatsu (Solidification, Experimentation)
H. Asahi
Osaka University Institute of Science and Industrial Research, 8-1 Mihogaoka, Ibarikai, 567, Ibaraki-shi, Japan Email H. Asahi (Molecular beam epitaxy)
R. Bhat
3726 Luther Court, Burlington, NC 27215, USA Email R. Bhat (Thin film, Epitaxial growth)
A. Bhattacharya
Tata Institute of Fundamental Research Department of Condensed Matter Physics and Materials Science, Homi Bhabha Road, Colaba, 400005, Mumbai, India Email A. Bhattacharya (Epitaxial growth, Nanowires, Particles and quantum dots, Optoelectronic devices)
R.M. Biefeld
Sandia National Laboratories, PO Box 5800, Albuquerque, New Mexico, 87185-0601, United States Email R.M. Biefeld (Epitaxial growth, Nanostructures)
E. Calleja
Polytechnic University of Madrid Department of Electronic Engineering, 28040, Madrid, Spain Email E. Calleja (Molecular beam epitaxy of compound semiconductors, Materials for devices)
C. Caneau
Corning, NY 14830, USA Email C. Caneau (Epitaxy, Semiconductor heterostructures)
K. Deppert
Lund University Department of Physics, Box 118, 221 00, Lund, Sweden Email K. Deppert(Nanocrystals, Nanowires, Epitaxy, III-V semiconductors)
J. Derby
University of Minnesota Department of Chemical Engineering and Materials Science, 421 Washington Avenue SE, Minneapolis, Minnesota, 55455-0132, United States Email J. Derby (Computational models)
T. Duffar
Materials and Processes Science and Engineering, Chimie Metalurgiques Domaine University St Martin, 38402, St Martin d'Heres, France Email T. Duffar (Bulk crystal growth processes from the melt, including their numerical simulation, All types of defects in bulk crystals, especially in relation with growth conditions, Capillarity in bulk crystal growth)
R. Fornari
University of Parma Department of Physics and Earth Sciences Macedonio Melloni, Area delle Scienze 7/A, 43124, Parma, Italy Email R. Fornari (Compound semiconductors, Semiconducting oxides, Melt growth, MOVPE)
V. Fratello
Qi2, Kent, Washington, , United States Email V. Fratello (Oxide crystals, Liquid phase epitaxy of oxides, Solution growth of oxides, Magnetic materials, Optical materials, Piezoelectric materials)
Y. Furukawa
Hokkaido University Institute of Low Temperature Science, Kita-19, Nishi-8, Kita-ku, 060-0819, Sapporo, Japan Email Y. Furukawa (Crystallization kinetics, Pattern formation)
M.S. Goorsky
University of California Los Angeles Department of Materials Science and Engineering, Los Angeles, California, CA 90095-1595, United States Email M.S. Goorsky (XRD characterization, Epitaxy for devices)
C.M. Gourlay
Imperial College London Department of Materials, Exhibition Road, SW7 2AZ, London, United Kingdom Email C.M. Gourlay (Solidification, Microstructure evolution)
K. Jacobs
Ferdinand Braun Institute Leibniz Institute for High Frequency Technology, Gustav-Kirchhoff-Straße 4, 12489, Berlin, Germany Email K. Jacobs (Solvothermal growth, Oxide crystals, Epitaxy)
C.W. Lan
National Taiwan University Department of Chemical Engineering, 10617, Taipei, TaiwanEmail C.W. Lan (Modeling and simulation, Semiconductor solar cells and photovoltaic materials, Optical crystals, Transport phenomena)
P. Müller
Interdisciplinary Nanoscience Centre Marseille, Campus de Luminy case 913, 13288, Marseille, France Email P. Müller (Theory of crystal growth, Growth mechanisms, Epitaxy, Nanoscale materials, Thin films)
T. Nishinaga
The University of Tokyo - Kashiwa Campus, 4-11-4 Minamisakasai, 277-0043, Kashiwa-City, Japan Email T. Nishinaga (Semiconductor growth, Epitaxy, Nanostructures)
D.P. Norton
UNIVERSITY OF FLORIDA, Gainesville, Florida, 32608, United States Email D.P. Norton(Oxide thin films, Epitaxy)
A. Ohtomo
Tokyo Institute of Technology School of Engineering Graduate School of Engineering Department of International Development Engineering, 2-12-1-S1-1 Ookayama, Meguro-ku, 152-8552, Meguro-Ku, Japan Email A. Ohtomo
A.G. Ostrogorsky
Illinois Institute of Technology Department Mechanical Materials and Aerospace Engineering, 10 West 32nd Street, 243 Engineering One Building, Chicago, Illinois, 60616-3793, United States Email A.G. Ostrogorsky (Bulk crystal growth)
T. Paskova
North Carolina State University Department of Electrical and Computer Engineering, 890 Oval Drive, Raleigh, North Carolina, NC 27695-7911, United States Email T. Paskova(Growth of bulk nitrides, Epitaxy of highly mismatched systems, Defects in III-V semiconductors)
M. Plapp
Laboratory of Physics of Condensed Matter, 91128, Palaiseau, France Email M. Plapp(Solidification, Theory and modeling)
K. Ploog
Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 11017, Berlin, Germany Email K. Ploog (Molecular beam epitaxy)
S.R. Qiu
Lawrence Livermore National Laboratory Physical and Life Sciences Directorate, 7000 East Avenue, Livermore, California, CA 94551, United States Email S.R. Qiu (Solution growth, Biomineralization)
J.M. Redwing
Penn State Department of Materials Science and Engineering, 326 Steidle Building, University Park, Pennsylvania, 16802-7003, United States Email J.M. Redwing(Nanoscale materials, Quantum dots, Nanoparticles, Nanowires)
M. Rettenmayr
Friedrich Schiller University Jena Otto Schott Institute for Material Research, Löbdergraben 32, 07743, Jena, Germany Email M. Rettenmayr (Soldification)
M. Roth
Hebrew University of Jerusalem Department of Genetics, Givat Ram, 91904, Yerushalayim, Israel Email M. Roth (Nonlinear optical and electro-optical materials)
P. Rudolph
Crystal Technology Consulting, 12529, Schönefeld, Germany Email P. Rudolph (Defects, Bulk growth, Special types of growth technologies, Semiconductors, Thermodynamics and kinetics, Melt structure)
K. Sangwal
Lublin University of Technology Department of Applied Physics, ul. Nadbystrzycka 38, 20-618, Lublin, Poland Email K. Sangwal (Solution growth, Crystallization kinetics, Growth morphology)
G. Sazaki
Hokkaido University Institute of Low Temperature Science, Kita-19, Nishi-8, Kita-ku, 060-0819, Sapporo, Japan Email G. Sazaki
D.W. Shaw
University of Texas, 503 Potomac Pl., Southlake, Texas, TX 76092, United States Email D.W. Shaw (Semiconductors, Epitaxy, Devices)
M. Tischler
Cooledge Lighting Inc, Richmond, BC V6V 2L1, British Columbia, Canada Email M. Tischler (Priority communications)
S. Uda
Tohoku University Institute for Materials Research, 2-1-1 Katahira, 980-8577, Sendai, Japan Email S. Uda (Oxide crystal growth, Physical chemistry of melt, Growth mechanism)
M. Uwaha
Aichi Institute of Technology Center for General Education, 1247 Yachigusa, Yakusa-cho, 470-0392, Toyota, Japan Email M. Uwaha (Growth kinetics)
S. Veesler
Interdisciplinary Nanoscience Centre Marseille, Campus de Luminy case 913, F-13288, Marseille, France Email S. Veesler (Solution growth, Industrial - biological macromolecules, Pharmaceutical compounds)
M. Weyers
Ferdinand Braun Institute Leibniz Institute for High Frequency Technology, Gustav-Kirchhoff-Straße 4, 12489, Berlin, Germany Email M. Weyers (Semiconducting III-V materials, Metal-organic vapour phase epitaxy, Epitaxial growth, Devices)
A. Zappettini
Institute of Materials for Electronics and Magnetism National Research Council, Area Delle Scienze 37/a, I-43010, Parma, Italy Email A. Zappettini (Compound semiconductors, Bulk crystal growth, Nanostructure growth)
Founding Editor
M. Schieber †
Co-Founders
N. Cabrera
B. Chalmers
F.C. Frank
Former Advisor
R.A. Laudise †