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Journal of Crystal Growth
基本信息
期刊名称 Journal of Crystal Growth
J CRYST GROWTH
期刊ISSN 0022-0248
期刊官方网站 https://www.sciencedirect.com/journal/journal-of-crystal-growth
是否OA No
出版商 Elsevier B.V.
出版周期 Biweekly
文章处理费 登录后查看
始发年份 1967
年文章数 306
影响因子 1.7(2023)  scijournal影响因子  greensci影响因子
中科院SCI期刊分区
大类学科 小类学科 Top 综述
物理3区 CRYSTALLOGRAPHY 晶体学4区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合4区
PHYSICS, APPLIED 物理:应用4区
CiteScore
CiteScore排名 CiteScore SJR SNIP
学科 排名 百分位 3.6 0.379 0.768
Physics and Astronomy
Condensed Matter Physics
205/434 52%
Chemistry
Inorganic Chemistry
40/79 50%
Materials Science
Materials Chemistry
162/317 49%
补充信息
自引率 5.9%
H-index 136
SCI收录状况 Science Citation Index Expanded
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PubMed Central (PMC) http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0022-0248%5BISSN%5D
投稿指南
期刊投稿网址 https://www.editorialmanager.com/CRYS
收稿范围
The Journal of Crystal Growth offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.

Note
Please see our Guide for Authors for information on article submission. If you require any further information or help, please visit our Support Center.
收录体裁
Original research work
Priority communications

投稿指南 https://www.sciencedirect.com/journal/journal-of-crystal-growth/publish/guide-for-authors
投稿模板
参考文献格式 https://www.elsevier.com/journals/journal-of-crystal-growth/0022-0248/guide-for-authors
编辑信息
Principal Editor
T.F. Kuech
University of Wisconsin-Madison Department of Chemical and Biological Engineering, 1415 Engineering Drive, Madison, Wisconsin, 53706-1607, United States, Fax: +1 608 262 3782 Phone +1 608 263 2922 
Editorial Board
Stanford University Geballe Laboratory for Advanced Materials, 476 Lomita Mall, Stanford, California, CA 94305-4045, United States, Fax: +1 650 723 3044 Phone +1 650 723 4007 

K. Nakajima

Tohoku University Institute for Materials Research, 2-1-1 Katahira, 980-8577, Sendai, Japan, Fax: +81 22 215 2006 Phone +81 22 215 2005 
University of Utah College of Engineering, 50 S. Central Campus Dr., Salt Lake City, Utah, 84112-9202, United States, Fax: +1 801 581 8692 Phone +1 801 581 8387 
Associate Editors

S. Akamatsu

Paris Institute of Nanosciences, 4 Place Jussieu, 75252, Paris, France  (Solidification, Experimentation)

H. Asahi

Osaka University Institute of Science and Industrial Research, 8-1 Mihogaoka, Ibarikai, 567, Ibaraki-shi, Japan  (Molecular beam epitaxy)

R. Bhat

3726 Luther Court, Burlington, NC 27215, USA  (Thin film, Epitaxial growth)

A. Bhattacharya

Tata Institute of Fundamental Research Department of Condensed Matter Physics and Materials Science, Homi Bhabha Road, Colaba, 400005, Mumbai, India  (Epitaxial growth, Nanowires, Particles and quantum dots, Optoelectronic devices)

R.M. Biefeld

Sandia National Laboratories, PO Box 5800, Albuquerque, New Mexico, 87185-0601, United States  (Epitaxial growth, Nanostructures)
Polytechnic University of Madrid Department of Electronic Engineering, 28040, Madrid, Spain  (Molecular beam epitaxy of compound semiconductors, Materials for devices)

C. Caneau

Corning, NY 14830, USA  (Epitaxy, Semiconductor heterostructures)

K. Deppert

Lund University Department of Physics, Box 118, 221 00, Lund, Sweden (Nanocrystals, Nanowires, Epitaxy, III-V semiconductors)

J. Derby

University of Minnesota Department of Chemical Engineering and Materials Science, 421 Washington Avenue SE, Minneapolis, Minnesota, 55455-0132, United States  (Computational models)

T. Duffar

Materials and Processes Science and Engineering, Chimie Metalurgiques Domaine University St Martin, 38402, St Martin d'Heres, France  (Bulk crystal growth processes from the melt, including their numerical simulation, All types of defects in bulk crystals, especially in relation with growth conditions, Capillarity in bulk crystal growth)

R. Fornari

University of Parma Department of Physics and Earth Sciences Macedonio Melloni, Area delle Scienze 7/A, 43124, Parma, Italy  (Compound semiconductors, Semiconducting oxides, Melt growth, MOVPE)
Qi2, Kent, Washington, , United States  (Oxide crystals, Liquid phase epitaxy of oxides, Solution growth of oxides, Magnetic materials, Optical materials, Piezoelectric materials)

Y. Furukawa

Hokkaido University Institute of Low Temperature Science, Kita-19, Nishi-8, Kita-ku, 060-0819, Sapporo, Japan  (Crystallization kinetics, Pattern formation)

M.S. Goorsky

University of California Los Angeles Department of Materials Science and Engineering, Los Angeles, California, CA 90095-1595, United States  (XRD characterization, Epitaxy for devices)

C.M. Gourlay

Imperial College London Department of Materials, Exhibition Road, SW7 2AZ, London, United Kingdom  (Solidification, Microstructure evolution)

K. Jacobs

Ferdinand Braun Institute Leibniz Institute for High Frequency Technology, Gustav-Kirchhoff-Straße 4, 12489, Berlin, Germany  (Solvothermal growth, Oxide crystals, Epitaxy)

C.W. Lan

National Taiwan University Department of Chemical Engineering, 10617, Taipei, Taiwan (Modeling and simulation, Semiconductor solar cells and photovoltaic materials, Optical crystals, Transport phenomena)
Interdisciplinary Nanoscience Centre Marseille, Campus de Luminy case 913, 13288, Marseille, France  (Theory of crystal growth, Growth mechanisms, Epitaxy, Nanoscale materials, Thin films)

T. Nishinaga

The University of Tokyo - Kashiwa Campus, 4-11-4 Minamisakasai, 277-0043, Kashiwa-City, Japan  (Semiconductor growth, Epitaxy, Nanostructures)

D.P. Norton

UNIVERSITY OF FLORIDA, Gainesville, Florida, 32608, United States (Oxide thin films, Epitaxy)
Tokyo Institute of Technology School of Engineering Graduate School of Engineering Department of International Development Engineering, 2-12-1-S1-1 Ookayama, Meguro-ku, 152-8552, Meguro-Ku, Japan 

A.G. Ostrogorsky

Illinois Institute of Technology Department Mechanical Materials and Aerospace Engineering, 10 West 32nd Street, 243 Engineering One Building, Chicago, Illinois, 60616-3793, United States  (Bulk crystal growth)

T. Paskova

North Carolina State University Department of Electrical and Computer Engineering, 890 Oval Drive, Raleigh, North Carolina, NC 27695-7911, United States (Growth of bulk nitrides, Epitaxy of highly mismatched systems, Defects in III-V semiconductors)

M. Plapp

Laboratory of Physics of Condensed Matter, 91128, Palaiseau, France (Solidification, Theory and modeling)

K. Ploog

Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 11017, Berlin, Germany  (Molecular beam epitaxy)

S.R. Qiu

Lawrence Livermore National Laboratory Physical and Life Sciences Directorate, 7000 East Avenue, Livermore, California, CA 94551, United States  (Solution growth, Biomineralization)

J.M. Redwing

Penn State Department of Materials Science and Engineering, 326 Steidle Building, University Park, Pennsylvania, 16802-7003, United States (Nanoscale materials, Quantum dots, Nanoparticles, Nanowires)

M. Rettenmayr

Friedrich Schiller University Jena Otto Schott Institute for Material Research, Löbdergraben 32, 07743, Jena, Germany  (Soldification)

M. Roth

Hebrew University of Jerusalem Department of Genetics, Givat Ram, 91904, Yerushalayim, Israel  (Nonlinear optical and electro-optical materials)

P. Rudolph

Crystal Technology Consulting, 12529, Schönefeld, Germany  (Defects, Bulk growth, Special types of growth technologies, Semiconductors, Thermodynamics and kinetics, Melt structure)

K. Sangwal

Lublin University of Technology Department of Applied Physics, ul. Nadbystrzycka 38, 20-618, Lublin, Poland  (Solution growth, Crystallization kinetics, Growth morphology)

G. Sazaki

Hokkaido University Institute of Low Temperature Science, Kita-19, Nishi-8, Kita-ku, 060-0819, Sapporo, Japan 

D.W. Shaw

University of Texas, 503 Potomac Pl., Southlake, Texas, TX 76092, United States  (Semiconductors, Epitaxy, Devices)

M. Tischler

Cooledge Lighting Inc, Richmond, BC V6V 2L1, British Columbia, Canada  (Priority communications)
Tohoku University Institute for Materials Research, 2-1-1 Katahira, 980-8577, Sendai, Japan  (Oxide crystal growth, Physical chemistry of melt, Growth mechanism)

M. Uwaha

Aichi Institute of Technology Center for General Education, 1247 Yachigusa, Yakusa-cho, 470-0392, Toyota, Japan  (Growth kinetics)

S. Veesler

Interdisciplinary Nanoscience Centre Marseille, Campus de Luminy case 913, F-13288, Marseille, France  (Solution growth, Industrial - biological macromolecules, Pharmaceutical compounds)

M. Weyers

Ferdinand Braun Institute Leibniz Institute for High Frequency Technology, Gustav-Kirchhoff-Straße 4, 12489, Berlin, Germany  (Semiconducting III-V materials, Metal-organic vapour phase epitaxy, Epitaxial growth, Devices)

A. Zappettini

Institute of Materials for Electronics and Magnetism National Research Council, Area Delle Scienze 37/a, I-43010, Parma, Italy  (Compound semiconductors, Bulk crystal growth, Nanostructure growth)
Founding Editor

M. Schieber †

Co-Founders

N. Cabrera

B. Chalmers

F.C. Frank

Former Advisor

R.A. Laudise †


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