It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design with appropriate experimental backup; (2) optical, electrical, morphological characterization techniques and parameter extraction with experimental application to real devices; (3) device fabrication and synthesis, including device-related new materials growth, electro-optical characterization and performance evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) modeling and simulation of solid-state devices and processes with appropriate experimental backup; (6) nanoscale electronic and optoelectronic devices for various applications, including photovoltaics, sensing, micro- and nano-mechanical (MEMS/NEMS) systems, quantum computation and communication.

Important: Given the wide availability of TCAD simulation packages (Synopsys, Silvaco, etc.) device simulation papers should be coupled with experiment, revolutionary concepts or novel analytical approaches. Pure simulation papers are not considered. Papers on materials growth and characterization should be relevant to a current or future device technology.

Types of contributions: Original research papers, letters (intended for high-impact and high-quality short papers) and invited review papers (please contact the editors prior to submission). Solid-State Electronics does not publish notes or brief communications.

Keywords: solid state electronics, field effect transistor, semiconductor (Si, SOI, Ge, III-V, 2D, etc.), nano-devices, new device concepts, fabrication, characterization, modeling, memories, high-voltage devices, photovoltaics, MEMS/NEMS

 Original research papers
letters
invited review papers 

Editors
Enrique Calleja
Polytechnic University of Madrid Department of Electronic Engineering, 28040, Madrid, Spain, Fax: +34 91 3367323 Email Enrique Calleja
Sorin Cristoloveanu
COMUE University Grenoble Alpes, Ref: LPCS-SSE, 46 av. Felix Viallet, F-38031 Grenoble Cedex 1, France, Fax: +33 476 85 50 54 Email Sorin Cristoloveanu
Alexander Zaslavsky
Brown University School of Engineering, Box D 182 Hope Street, Providence, Rhode Island, 02912-9037, United States Email Alexander Zaslavsky
Kuniyuki Kakushima
Tokyo Institute of Technology - Suzukakedai Campus, 226-8503, Yokohama, Japan Email Kuniyuki Kakushima
Editorial Advisory Board
Giorgio Baccarani
University Hospital of Bologna Sant'Orsola-Malpighi Polyclinic, Bologna, Italy
Jagadish Chennupati
Australian National University, Canberra, Australia
Jean-Pierre Colinge
Luigi Colombo
Texas Instruments Inc, Dallas, Texas, United States
Gerard Ghibaudo
Graduate School of Physics Electronics and Materials, Grenoble, France
Gennady Gildenblat
Arizona State University, Tempe, Arizona, United States
Steve Hall
University of Liverpool, Liverpool, United Kingdom
Tomihiro Hashizume
Hitachi Ltd Center for Exploratory Research, Hiki-gun, Japan
Ru Huang
Peking University, Beijing, China
Sungwoo Hwang
Samsung Advanced Institute of Technology, Suwon, Korea, Republic of
Stacia Keller
University of California Santa Barbara, Santa Barbara, California, United States
Jong-Ho Lee
Seoul National University, Seoul, Korea, Republic of
Colin McAndrew
Freescale Semiconductor Inc, Tempe, Arizona, United States
Jean-Michel Sallese
Federal Polytechnic School of Lausanne, Lausanne, Switzerland
Jurriaan Schmitz
University of Twente, Enschede, Netherlands
Alan Seabaugh
University of Notre Dame, Notre Dame, Indiana, United States
Michael Shur
Rensselaer Polytechnic Institute, Troy, New York, United States
Andreas Waag
Braunschweig University of Technology, Braunschweig, Germany
Hei Wong
City University of Hong Kong, Kowloon, Hong Kong