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Emergence of Near-Infrared Photoluminescence via ZnS Shell Growth on the AgBiS2 Nanocrystals
Chemistry of Materials ( IF 7.2 ) Pub Date : 2024-12-11 , DOI: 10.1021/acs.chemmater.4c02406 Asim Onal, Tarik Safa Kaya, Önder Metin, Sedat Nizamoglu
Chemistry of Materials ( IF 7.2 ) Pub Date : 2024-12-11 , DOI: 10.1021/acs.chemmater.4c02406 Asim Onal, Tarik Safa Kaya, Önder Metin, Sedat Nizamoglu
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AgBiS2 nanocrystals (NCs), composed of nontoxic, earth-abundant materials and exhibiting an exceptionally high absorption coefficient from visible to near-infrared (>105 cm–1), hold promise for photovoltaics but have lack of photoluminescence (PL) due to intrinsic nonradiative recombination and challenging shell growth. In this study, we reported a facile wet-chemical approach for the epitaxial growth of ZnS shell on AgBiS2 NCs, which triggered the observation of PL emission in the near-infrared (764 nm). Since high quality of the core is critical for epitaxial shell growth, we first obtained rock-salt structured AgBiS2 NCs with high crystallinity, nearly spherical shape and monodisperse size distribution (<6%) via a dual-ligand approach reacting Ag–Bi oleate with elemental sulfur in oleylamine. Next, a zincblende ZnS shell with a low-lattice mismatch of 4.9% was grown on as-prepared AgBiS2 NCs via a highly reactive zinc (Zn(acac)2) precursor that led to a higher photoluminescence quantum yield (PLQY) of 15.3%, in comparison with a relatively low reactivity precursor (Zn(ac)2) resulting in reduced PLQY. The emission from AgBiS2 NCs with ultrastrong absorption, facilitated by shell growth, can open up new possibilities in lighting, display, and bioimaging.
中文翻译:
通过 AgBiS2 纳米晶体上的 ZnS 壳层生长出现近红外光致发光
AgBiS 2 纳米晶体 (NCs) 由无毒、地球上丰富的材料组成,在可见光到近红外 (>10 5 cm –1 ) 范围内表现出极高的吸收系数,有望用于光伏,但由于本征的非辐射复合和具有挑战性的壳生长而缺乏光致发光 (PL)。在这项研究中,我们报道了一种简单的湿化学方法,用于 ZnS 壳在 AgBiS 2 NCs 上外延生长,这触发了在近红外 (764 nm) 中观察 PL 发射。由于高质量的核对于外延壳的生长至关重要,我们首先通过双配体方法将 Ag-Bi 油酸酯与油胺中的元素硫反应,获得了具有高结晶度、近球形和单分散尺寸分布 (<6%) 的岩盐结构 AgBiS 2 NCs。接下来, 2 通过高反应性锌 (Zn(acac) 2 ) 前驱体,导致较高的光致发光量子产率 (PLQY) 为 15.3%,而相对较低的反应性前驱体 (Zn(ac) 2 ) 导致 PLQY 降低。AgBiS 2 NC 的发射具有超强的吸收能力,由壳生长促进,可以为照明、显示和生物成像开辟新的可能性。
更新日期:2024-12-11
中文翻译:

通过 AgBiS2 纳米晶体上的 ZnS 壳层生长出现近红外光致发光
AgBiS 2 纳米晶体 (NCs) 由无毒、地球上丰富的材料组成,在可见光到近红外 (>10 5 cm –1 ) 范围内表现出极高的吸收系数,有望用于光伏,但由于本征的非辐射复合和具有挑战性的壳生长而缺乏光致发光 (PL)。在这项研究中,我们报道了一种简单的湿化学方法,用于 ZnS 壳在 AgBiS 2 NCs 上外延生长,这触发了在近红外 (764 nm) 中观察 PL 发射。由于高质量的核对于外延壳的生长至关重要,我们首先通过双配体方法将 Ag-Bi 油酸酯与油胺中的元素硫反应,获得了具有高结晶度、近球形和单分散尺寸分布 (<6%) 的岩盐结构 AgBiS 2 NCs。接下来, 2 通过高反应性锌 (Zn(acac) 2 ) 前驱体,导致较高的光致发光量子产率 (PLQY) 为 15.3%,而相对较低的反应性前驱体 (Zn(ac) 2 ) 导致 PLQY 降低。AgBiS 2 NC 的发射具有超强的吸收能力,由壳生长促进,可以为照明、显示和生物成像开辟新的可能性。