材料化学“计算+实验”代表作：
1. Shengli Zhang, Zhong Yan, Yafei Li, Zhongfang Chen*, and Haibo Zeng*. Atomically thin arsenene and antimonene: Semimetal–semiconductor and indirect-direct band-gap transitions, Angewandte Chemie International Edition 2015, 54, 3112-3115. (引用次数：1545)
2. Shengli Zhang, Meiqiu Xie, Fengyu Li, Zhong Yan, Yafei Li, Erjun Kan, Wei Liu, Zhongfang Chen, and Haibo Zeng*. Semiconducting group 15 monolayers: A broad range of band gaps and high carrier mobilities, Angewandte Chemie International Edition 2016, 55, 1666-1669. (引用次数：1000)
3. Jianping Ji#, Xiufeng Song#, Jizi Liu#, Zhong Yan#, Chengxue Huo#, Shengli Zhang#, Meng Su, Lei Liao, Wenhui Wang, Zhenhua Ni, Yufeng Hao, and Haibo Zeng*. Two-dimensional antimonene single crystals grown by van der Waals epitaxy. Nature Communications 2016, 7, 13352. (引用次数：841)
4. Shengli Zhang, Shiying Guo, Zhongfang Chen, Yeliang Wang, Hongjun Gao, Julio Gómez-Herrero, Pablo Ares, Félix Zamora*, Zhen Zhu, and Haibo Zeng*. Recent progress in 2D group-VA semiconductors: from theory to experiment. Chemical Society Reviews 2018, 47, 982-1021. (引用次数：728)
5. Xiangyu Guo, Jinxing Gu, Shiru Lin, Shengli Zhang*, Zhongfang Chen*, and Shiping Huang*. Tackling the activity and selectivity challenges of electrocatalysts toward the nitrogen reduction reaction via atomically dispersed biatom catalysts. Journal of the American Chemical Society 2020, 142, 5709-5721. (引用次数：600)
6. Tianchao Niu, Wenhan Zhou, Dechun Zhou, Xuemin Hu, Shengli Zhang*, Kan Zhang, Miao Zhou, Harald Fuchs*, and Haibo Zeng*. Modulating epitaxial atomic structure of antimonene through interface design. Advanced Materials 2019, 31, 1902606.
7. Shiying Guo, Yupeng Zhang, Yanqi Ge, Shengli Zhang*, Haibo Zeng, and Han Zhang*. 2D V-V binary materials: Status and challenges. Advanced Materials 2019, 31, 1902352.
8. Yujie Gao, Cheng Lin, Kan Zhang*, Wenhan Zhou, Shiying Guo, Wenqiang Liu, Lianfu Jiang, Shengli Zhang*, and Haibo Zeng*. Pressurized alloying assisted synthesis of high quality antimonene for capacitive deionization. Advanced Functional Materials 2021, 31, 2102766.
9. Yi-Xuan Li, Jing Li, Dunru Zhu*, Ju-Zheng Wang, Guo-Fang Shu, Junji Li, Sheng-Li Zhang*, Xue-Ji Zhang, Serge Cosnier, Hai-Bo Zeng, Dan Shan*. 2D Zn-Porphyrin-Based Co(II)-MOF with 2-Methylimidazole Sitting Axially on the Paddle–Wheel Units: An Efficient Electrochemiluminescence Bioassay for SARS-CoV-2. Advanced Functional Materials 2022, 32, 2209743.
10. Xiangyu Guo, Shiru Lin, Jinxing Gu, Shengli Zhang*, Zhongfang Chen*, and Shiping Huang*. Establishing a theoretical landscape for identifying basal plane active 2D metal borides (MBenes) toward nitrogen electroreduction. Advanced Functional Materials 2020, 31, 2008056.
11. Yu Chen, Yang shen, Weijian Tang, Yihui Wu*, Shengli Zhang* and Wenhua Zhang*. Ion Compensation of Buried Interface Enables Highly Efficient and Stable Inverted MA-free Perovskite Solar Cells. Advanced Functional Materials 2022, 32, 2206703.
12. Shengli Zhang, Wenhan Zhou, Yandong Ma, Jianping Ji, Bo Cai, Shengyuan A. Yang, Zhen Zhu, Zhongfang Chen, and Haibo Zeng*. Antimonene oxides: Emerging tunable direct bandgap semiconductor and novel topological insulator. Nano Letters 2017, 17, 3434-3440.
13. Yaxin Huang, Chongyang Zhu, Shengli Zhang*, Xuemin Hu, Kan Zhang, Wenhan Zhou, Shiying Guo, Feng Xu*, and Haibo Zeng*. Ultra-thin bismuth nanosheets for stable Na-ion batteries: Clarification of structure and phase transition by in situ observation. Nano Letters 2019, 19, 1118-1123.
14. Lili Xu, Haifeng Zheng, Bo Xu, Gaoyu Liu, Shengli Zhang*, and Haibo Zeng*. Suppressing nonradiative recombination by electron-donating substituents in 2D conjugated triphenylamine polymers toward efficient perovskite optoelectronics. Nano Letters 2023, 23, 1954-1960.
15. Xuhai Liu, Shengli Zhang*, Shiying Guo, Bo Cai, Shengyuan A. Yang, Fukai Shan, Martin Pumera*, and Haibo Zeng*. Advances of 2D bismuth in energy sciences. Chem. Soc. Rev. 2020, 49, 263-285.
16. Lihong Zhang; Xiangyu Guo*; Shengli Zhang*; Thomas Frauenheim; Shiping Huang*. Hybrid Double Atom Catalysts for Hydrogen Evolution Reaction: A Sweet Marriage of Metal and Nonmetal. Advanced Energy Materials 2023, DOI: 10.1002/aenm.202302754.
17. Xiangyu Guo, Shengli Zhang*, Liangzhi Kou, Chi Yung Yam, Thomas Frauenheim, Zhongfang Chen*, Shiping Huang*. Data-driven pursuit of electrochemically stable 2D materials with basal plane activity toward oxygen electrocatalysis. Energy & Environmental Science 2023, DOI: 10.1039/D3EE01723K
18. Xiangyu Guo, Shiru Lin, Jinxing Gu, Shengli Zhang*, Zhongfang Chen*, and Shiping Huang*. Simultaneously achieving high activity and selectivity toward two-electron O2 electroreduction: The power of single-atom catalysts. ACS Catalysis 2019, 9, 11042-11054.
19. Shujin Hou, Lili Xu, Xing Ding, Regina M Kluge, Theophilus Kobina Sarpey, Richard W Haid, Batyr Garlyyev, Soumya Mukherjee, Julien Warnan, Max Koch, Shengli Zhang*, Weijin Li*, Aliaksandr S Bandarenka*, Roland A Fischer*. Dual in situ laser techniques underpin the role of cations in impacting electrocatalysts. Angewandte Chemie 2022, 134, e202201.
20. Lili Xu, Gaoyu Liu, Hengyang Xiang*, Run Wang, Qingsong Shan, Shichen Yuan, Bo Cai*, Zhi Li* Weijin Li, Shengli Zhang*, Haibo Zeng*. Charge-carrier dynamics and regulation strategies in perovskite light-emitting diodes: From materials to devices, Applied Physical Reviews 2022, 9, 021308.
21. 胡扬， 张胜利*， 周文瀚， 刘高豫， 徐丽丽， 尹万健， 曾海波*. 基于机器学习探索钙钛矿材料及其应用 硅酸盐学报 2023, 2, 452-468.
22. 张胜利, 胡扬, 周文瀚*, 曾海波*. 机器学习在二维材料探索中的应用. 金属功能材料 2022, 4, 1-21.
材料物理+器件物理“计算+实验”代表作：
1. Shengli Zhang, Meiqiu Xie, Bo Cai, Haijun Zhang, Yandong Ma, Zhongfang Chen, Zhen Zhu, Ziyu Hu*, and Haibo Zeng*. Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain. Physical Review B 2016, 93, 245303.
2. Wen Lei, Wei Wang, Xing Ming*, Shengli Zhang*, Gang Tang, Xiaojun Zheng, Huan Li, and Carmine Autieri. Structural transition, metallization, and superconductivity in quasi-two-dimensional layered PdS2 under compression. Physical Review B 2020, 101, 205149.
3. Hengze Qu, Shiying Guo, Wenhan Zhou, Zhenhua Wu, Jiang Cao, Zhi Li, Haibo Zeng, and Shengli Zhang*. Enhanced interband tunneling in two-dimensional tunneling transistors through anisotropic energy dispersion, Physical Review B 2022, 105, 075413.
4. Ziyu Hu, Junfeng Gao*, Shengli Zhang*, Jijun Zhao, Wenhan Zhou, and Haibo Zeng. Topologically protected states and half-metal behaviors: Defect-strain synergy effects in two-dimensional antimonene. Physical Review Materials 2019, 3, 074005.
5. Wenhan Zhou, Shiying Guo, Shengli Zhang*, Zhen Zhu, Shengyuan A. Yang, Mingxing Chen, Bo Cai, Hengze Qu, and Haibo Zeng*. Unusual electronic transitions in two-dimensional layered SnSb2Te4 driven by electronic state rehybridization. Physical Review Applied 2019, 11, 064045.
6. Guohui Zhan, Zhilong Yang, Kun Luo, Shengli Zhang*, Zhenhua Wu*. Large magnetoresistance and perfect spin-injection efficiency in two-dimensional strained VSi2N4-based room-temperature magnetic-tunnel-junction devices. Physical Review Applied 2023, 19, 014020.
7. Shiying Guo, Hengze Qu, Wenhan Zhou, Shengyuan A. Yang, Yee Sin Ang, Jing Lu, Haibo Zeng*, Shengli Zhang*. High-performance and low-power transistors based on anisotropic monolayer β-TeO2. Physical Review Applied 2022, 17, 064010.
8. Jing Li, Wenqiang Liu, Wenhan Zhou, Jialin Yang, Hengze Qu, Yang Hu, Shengli Zhang*. Dipole-engineering strategy for regulating the electronic contact of a two-dimensional SbX/graphene (X = P, As, Bi) van der Waals interface. Physical Review Applied 2022, 17, 054009.
9. Wenhan Zhou, Hengze Qu, Shiying Guo, Bo Cai, Hongting Chen, Zhenhua Wu, Haibo Zeng*, Shengli Zhang*. Dependence of tunneling mechanism on two-dimensional material parameters: A high-Throughput Study. Physical Review Applied 2022, 17, 064053.
10. Wenhan Zhou, Shengli Zhang*, Shiying Guo, Yangyang Wang, Jing Lu, Xing Ming, Zhi Li, Hengze Qu, and Haibo Zeng*, Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN. Physical Review Applied 2020, 13, 044066.
11. Shiying Guo, Yangyang Wang, Xuemin Hu, Shengli Zhang*, Hengze Qu, Wenhan Zhou, Zhenhua Wu, Xuhai Liu, and Haibo Zeng*. Ultrascaled double-gate monolayer SnS2 MOSFETs for high performance and low power applications. Physical Review Applied 2020, 14, 044031.
12. Jialin Yang; Wenhan Zhou*; Chuyao Chen; Jingwen Zhang; Hengze Qu; Xiaojia Yuan; Zhenhua Wu; Haibo Zeng*; Shengli Zhang*. Type-III Van Der Waals Stacking Induced Ohmic Contacts: A Contact Strategy for 2-D Complementary Electronics. IEEE Transactions on Electron Devices, 2023, 70, 6072-6077.
13. Hengze Qu; Shengli Zhang*; Haibo Zeng*. Two-dimensional MSi2N4 heterostructure P-type transistors with sub-thermionic transport performances. IEEE Electron Device Letters 2023, 44, 1492-1495.
14. Jialin Yang, Wenhan Zhou*, Chuyao Chen, Jingwen Zhang, Hengze Qu, Yuxi Ji, Li Tao*, Zhenhua Wu*, Haibo Zeng, Shengli Zhang*. Extreme anisotropic dispersion and one-dimensional confined electrons in 2D SiP2 FETs with high transmission coefficients. IEEE Transactions on Electron Devices 2023, 70, 1330-1337.
15. Wenhan Zhou, Shiying Guo, Haibo Zeng, and Shengli Zhang*. High-Performance Monolayer BeN2 Transistors With Ultrahigh On-State Current: A DFT Coupled With NEGF Study. IEEE Transactions on Electron Devices 2022, 69, 4501.
16. Haoqing Xu, Weizhuo Gan, Lei Cao, Cheng Yang, Jiahao Wu, Mi Zhou, Hengze Qu, Shengli Zhang*, Huaxiang Yin, Zhenhua Wu*. A Machine Learning Approach for Optimization of Channel Geometry and Source/Drain Doping Profile of Stacked Nanosheet Transistors. IEEE Transactions on Electron Devices 2022, 69, 3568.
17. Shengli Zhang*, Hengze Qu, Jiang Cao, Yangyang Wang, Shengyuan A. Yang, Wenhan Zhou, and Haibo Zeng*. Extending channel scaling limit of p-MOSFETs through antimonene with heavy effective mass and high density of state, IEEE Transactions on Electron Devices 2022, 69, 857.
18. Xinyan Xia, Shiying Guo, Lili Xu, Tingting Guo, Zhenhua Wu*, and Shengli Zhang*. Sensing performance of SO₂, SO₃ and NO₂ gas molecules on 2D pentagonal PdSe₂: A first-principle study. IEEE Electron Device Letters 2021, 42, 573-576.
19. Hengze Qu, Shengli Zhang*, Wenhan Zhou, Shiying Guo, and Haibo Zeng. Ballistic transport in high-performance and low-power sub-5 nm t wo-dimensional ZrNBr MOSFETs. IEEE Electron Device Letters 2020, 41, 1029-1032.
20. Hengze Qu, Shiying Guo, Wenhan Zhou, and Shengli Zhang*. Uncovering the anisotropic electronic structure of 2D group VA-VA monolayers for quantum transport. IEEE Electron Device Letters 2021, 42, 66-69.
21. Wenhan Zhou, Shengli Zhang*, Jiang Cao, Zhenhua Wu, Yangyang Wang, Yunwei Zhang, Zhong Yan, Hengze Qu, and Haibo Zeng*. Modulating tunneling width and energy window for high-on-current two-dimensional tunnel field-effect transistors, Nano Energy, 2021, 81, 105642.
22. Jialin Yang, Chuyao Chen, Jingwen Zhang, Wenhan Zhou*, Hengze Qu, Jing Li, Tingting Guo, Xiaoqin Shi, Zhenhua Wu*, Shengli Zhang*. High-performance p-type 2D FET based on monolayer GeC with high hole mobility: A DFT-NEGF study. Advanced Electronic Materials, 2022, 8, 2200388.
23. Shiying Guo, Wenhan Zhou, Hengze Qu, Shengli Zhang*, Wenqiang Liu, Gaoyu Liu, Xinyan Xia, Xiufeng Song*, and Haibo Zeng*. Quantum transport in monolayer α‐CS field-effect transistors, Advanced Electronic Materials, 2021, 7, 2001169.
24. Wenhan Zhou, Shengli Zhang*, Yangyang Wang, Shiying Guo, Hengze Qu, Pengxiang Bai, Zhi Li, and Haibo Zeng*. Anisotropic in-plane ballistic transport in monolayer black arsenic-phosphorus FETs. Advanced Electronic Materials, 2020, 6, 1901281.
25. Hengze Qu, Wenhan Zhou, Shiying Guo, Zhi Li, Yangyang Wang, and Shengli Zhang*. Ballistic Quantum Transport of Sub-10 nm 2D Sb2Te2Se Transistors. Advanced Electronic Materials, 2019, 5, 1900813.