原文链接：https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.202202779

Mechanical Modulation of 2D Electronic Devices at Atto-Joule Energy via Flexotronic Effect

Abstract: In addition to electrical, optical, and magnetic fields, mechanical forces have demonstrated a strong ability to modulate semiconductor devices. With the rapid development of piezotronics and flexotronics, force regulation has been widely used in field-effect transistors (FETs), human–machine interfaces, light-emitting diodes (LEDs), solar cells, etc. Here, a large mechanical modulation of electronic properties by nano-Newton force in semiconductor materials with a large Young's modulus-based force FET is reported. More importantly, this FET has ultralow switching energy dissipation (7 aJ per decuple current gain) and nearly zero leakage power; these values are even better than those of electronic FETs. This finding paves the way for practical applications of nanoforce modulation devices at high power efficiency.