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恭喜郭鹏文等同学的论文发表于Advanced Functional Materials
发布时间:2022-06-17

原文链接:https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.202202779

 

Mechanical Modulation of 2D Electronic Devices at Atto-Joule Energy via Flexotronic Effect

 

Abstract: In addition to electrical, optical, and magnetic fields, mechanical forces have demonstrated a strong ability to modulate semiconductor devices. With the rapid development of piezotronics and flexotronics, force regulation has been widely used in field-effect transistors (FETs), human–machine interfaces, light-emitting diodes (LEDs), solar cells, etc. Here, a large mechanical modulation of electronic properties by nano-Newton force in semiconductor materials with a large Young's modulus-based force FET is reported. More importantly, this FET has ultralow switching energy dissipation (7 aJ per decuple current gain) and nearly zero leakage power; these values are even better than those of electronic FETs. This finding paves the way for practical applications of nanoforce modulation devices at high power efficiency.