Selected Journal Publications:

1. P kushwaha, Ye Lu*,Chenming Hu et al “Characterization and Modeling of flicker noise in advanced FinFETs” IEEE Electron Device Letters, (2019) (*I am the Corresponding author of this paper) 

2. S Ramey, Ye Lu, et al “Aging model challenges in deeply scaled tri-gate technologies” IEEE International Integrated Reliability Workshop Proceeding (IIRW), 56-62 (2016) 

3. A. Pschall, P. Iavicoli,, Ye Lu et al. “Photoconductivity of Nanofilaments that are Selfassembled from a Porphyrin” The Journal of Physical Chemistry C, 119, 261154 (2015) 

4. S. Nam,.., Ye Lu, A.T. Charlie Johnson et al“Electrical wind force-driven and dislocationtemplated amorphization in Phase-Change Nanowires” Science, 336, 1561 (2012) 

5. Ye Lu et al “Graphene-protein bioelectronic devices with wavelength-tunable photoresponse” Applied Physics Letters, 100, 033110 (2012) 

6. Ye Lu et al “In-situ electronic characterization of graphene nanoconstriction fabricated in a transmission electron microscope” Nano Letters, 11, 5184 (2011) 

7. Ye Lu, B. Goldsmith, D. R. Strachan, J. Lim, Z. Luo, A. T. Charlie Johnson “High on/off ratio graphene nanoconstriction field effect transistors” Small, 6, 2748 (2010) 

8. Ye Lu, B. R. Goldsmith, N. J. Kybert, and A. T. C. Johnson “DNA-Decorated graphene chemical sensors” Applied Physics Letters, 97, 083107 (2010) 

9. Y. Dan#, Ye Lu#, N. J. Kybert, Z. Luo, A. T. Charlie Johnson “Intrinsic Response of Graphene Vapor Sensors” Nano Letters, 9, 1472 (2009)

Selected U.S. PATENTs:

1. Ye Lu et al “Enhanced MOS devices for RF design in 14nm FinFET technology” U.S. PCT 15/816,295 (2018) 

2. Ye Lu et al “ High Q-Factor Fin MOS varactor with optimized number of Fins” U.S. PCT 15/816,295 (2017) 

3. Ye Lu et al “SAC on active gate for improve MOS varactor Q” U.S. PCT 15/686,827 (2017)