学术论文发表
(通讯作者† 共同一作#)
2025
63) Xin He, Hua Wang, Jian Sun, Xixiang Zhang, Kai Chang, and Fei Xue†, Intercalation of functional materials with phase transitions for neuromorphic applications, Matter 2025, in press (Invited Review)
2024
62）Zhuolun Li, Shaolong Wang, Chong Wang, Xi Zhang, Zhipeng Yu, Shanzheng Du, Zhongming Zeng, Yang Dai, Yuchao Zhang, Xiaochi Liu, Jian Sun, Jiawei Xue, Zheng Wu, Luyuan Fan, Junfeng Dai, Kun Zhai†, Anmin Nie†, Zhongyuan Liu, Yingchun Cheng†, Peierls Distortion Induced Giant Linear Dichroism, Second-Harmonic Generation, and In-Plane Ferroelectricity in NbOBr2, Small, 2407729 (2024)
61）Shanzheng Du, Yuchao Zhang, Xiaochi Liu, Yahua Yuan, Yumei Jing, Xuefan Zhou†, Hang Luo, Dou Zhang, Jian Sun†, van der Waals heterostructure-compatible, single-crystal Bi3.15Nd0.85Ti3O12 flakes with high fatigue endurance, Materials Letters, 372, 137102 (2024)
60) Jin-Min Ding, Zi-Yan Luo†, Jun-Jie Guo, Yu-Meng Yang, Yao-Zhuang Nie, Qing-Lin Xia, Jian Sun, Guang-Hua Guo, Unconventional magnetotransport properties of two-dimensional ferromagnet Fe5GeTe2, Applied Physics Letters, 124, 132408 (2024)
59) Yumei Jing, Xianfu Dai, Junqiang Yang, Xiaobin Zhang, Zhongwang Wang, Xiaochi Liu†, Huamin Li, Yahua Yuan, Xuefan Zhou, Hang Luo, Dou Zhang, and Jian Sun†, Integration of Ultrathin Hafnium Oxide with a Clean van der Waals Interface for Two-Dimensional Sandwich Heterostructure Electronics, Nano Letters, 24(13), 3937–3944 (2024)
58) Yuan Miao#, Xuefan Zhou#, Zhongwang Wang, Xiaochi Liu, Yahua Yuan, Yumei Jing, Hang Luo†, Dou Zhang, Jian Sun†, Electrically-Reconfigurable Extremely-High Density Physical Unclonable Cryptographic Keys based on Aurivillius Ferroelectrics, Advanced Functional Materials, 34(27), 2314883 (2024)
57) Q. Sun, X.F. Zhou, X.C. Liu, Y.H. Yuan, L. F. Sun, D. Wang, F. Xue†, H. Luo†, D. Zhang, Jian Sun†, Quasi-Zero-Dimensional Ferroelectric Polarization Charges-Coupled Resistance Switching with High-Current Density in Ultrascaled Semiconductors, Nano Letters, 24(3), 975 - 982 (2024)
56) Bingying You, Zheyuan Xu, Junqiang Yang, Xingxing Jiang, Yanfang Li, Gonglei Shao, Yuanyuan Jin, Haiyan Xiang, Huili Jiang, Xiaochi Liu, Jian Sun, Yexing Feng, Ying Jiang, Anlian Pan†, Song Liu†, Interlayer Coupling in Anisotropic/Isotropic Van der Waals Heterostructures of ReS2 and WS2, Small, 20(3), 2304010 (2024)
2023
55) Xinling Liu, Chi Zhang, Enlong Li, Caifang Gao, Ruixue Wang, Yu Liu, Fucai Liu†, Wu Shi, Yahua Yuan, Jian Sun†, Yen-Fu Lin†, Junhao Chu, Wenwu Li†, Ultralow Off-State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors, Advanced Functional Materials, 34(15), 2309642 (2023)
54) Fei Tang#, Xiaochi Liu#; Xianfu Dai; Yahua Yuan; Yumei Jing†, Jian Sun, Double-floating-gate memory device based on energy band engineered van der Waals heterostructure, Applied Physics Letters, 123, 133503 (2023)
53）Xianfu Dai, Yumei Jing, Rongqi Wu, Kui Tang, Xiaochi Liu†, Jian Sun†, Impact of In-situ oxidation-resulted high-k passivation layer on Device Stability and mobility improvement, Physica Status Solidi (RRL)–Rapid Research Letters, 2300162 (2023)
52）Rongqi Wu, Xiaochi Liu, Yahua Yuan, Zhongwang Wang, Yumei Jing, and Jian Sun†, Biomimetic Artificial Tetrachromatic Photoreceptors Based on Fully Light-Controlled 2D Transistors, Advanced Functional Materials, 33(46), 2305677 (2023)
51）Dongdong Liu, Yu Zhou, Shengqian Zheng, Xiaochi Liu, Jian Sun, Zhuolun Li, Zhenxiao Zhang, Zhineng Zhang, Shaolong Wang, Dongyu Cai, Yingchun Cheng†, and Wei Huang†, Tunable van der Waals Doping in WS2/CrOCl Heterostructure by Interlayer Coupling Engineering, ACS Appl. Electron. Mater., 5(7), 3973-3980 (2023)
50）Qi Sun, Meili Yuan, Rongqi Wu, Yuan Miao, Yahua Yuan, Yumei Jing, Yuanyuan Qu, Xiaochi Liu†, Jian Sun†, A light-programmed rewritable lattice-mediated multistate memory for high-density data storage, Advanced Materials, 35(32), 2302318 (2023)
49）Yang Chen, Yuanyuan Jin, Junqiang Yang, Yizhang Ren, Zhuojun Duan, Xiao Liu, Jian Sun, Song Liu, Xukun Zhu, Xidong Duan, Chemical vapor deposition synthesis and Raman scattering investigation of quasi-one-dimensional ZrS3 nanoflakes, Nano Research, 16(7), 10567-10572 (2023)
48）Yaqi Shen, Junqiang Yang, Yahua Yuan, Yumei Jing, Ying Yi, Xiaochi Liu, Jian Sun†, Air-sensitive HfSe2-based temperature indicator for two-dimensional electronic devices, Physica Status Solidi (RRL)–Rapid Research Letters, 19(7), 202300067 (2023)
47) Zhongwang Wang#, Xuefan Zhou#, Xiaochi Liu, Aocheng Qiu, Caifang Gao, Yahua Yuan, Yumei Jing, Dou Zhang, Wenwu Li†, Hang Luo†, Junhao Chu, Jian Sun†, van der Waals ferroelectric transistors: the all-round artificial synapses for high-precision neuromorphic computing, Chip, 2(2), 100044 (2023)
46) Yuanyuan Jin#, Jian Sun#, Ling Zhang, Junqiang Yang, Yangwu Wu, Bingying You, Xiao Liu, Kai Leng, Song Liu, Controllable Oxidation of ZrS2 to Prepare High-κ, Single-crystal m-ZrO2 for Two-dimensional Electronics, Advanced Materials, 35(18), 2212079 (2023)
45）Kui Tang, Xiaochi Liu, Zhongwang Wang, Rongqi Wu, Xianfu Dai, Yumei Jing, Jian Sun, Wenchen Luo, Comprehensive Polarity Regulation of WSe2 Field-Effect Transistors Enabled by Combining Contact Engineering and Plasma Doping, Physica Status Solidi (RRL)–Rapid Research Letters, 17(5), 2200466 (2023)
44）Rongqi Wu, Xiaochi Liu, Zhongwang Wang, Yumei Jing, Yahua Yuan, Kui Tang, Xianfu Dai, Aocheng Qiu, Hemendra N. Jaiswal, Jia Sun, Huamin Li, and Jian Sun†, Excitation/inhibition balancing in 2D synaptic transistors with minority-carrier charge dynamics, IEEE Electron Device Letters, 44 (1), 156-159 (2023)
2022
43) H. Shin, M. Taqi, F. Ali, S. Lee, M. S. Choi, C. Kim, B.-H. Lee, X. Liu, J. Sun, B. Oh, W. J. Yoo, Self-Powered 2D MoS2/WOx/WSe2 Heterojunction Photodetector Realized by Oxygen Plasma Treatment, Advanced Materials Interfaces, 9(32), 2201785, (2022)
42) Z. Wang#, X. Liu#, H. Lei, Y. Lu, Y. Yuan, Y. Qu, Y. Huang, H. Mizuta, W. J. Yoo, J. Sun†, Comprehensive Modulation of Conductance Anisotropy in Low-Symmetry ReS2 Transistors, Physical Review Applied, 17, 044017 (2022)
41) Z. Wang, X. Liu, X. Zhou, Y. Yuan, K. Zhou, D. Zhang, H. Luo†, J. Sun†, Reconfigurable Quasi‐Nonvolatile Memory / Subthermionic FET Functions in Ferroelectric–2D Semiconductor vdW Architectures, Advanced Materials, 34, 2200032 (2022)
40) X. Liu, M. S. Choi, E. Hwang, W. J. Yoo†, J. Sun†, Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects, Advanced Materials, 34, 2108425 (2022)
39) J. Yang, X. Liu, Q. Dong, Y. Shen, Y. Pan, Z. Wang, K. Tang, X. Dai, R. Wu, Y. Jin, W. Zhou, S. Liu, J. Sun†, Oxidations of Two-dimensional Semiconductors: Fundamentals and Applications, Chinese Chemical Letters 33, 177 (2022) (邀请综述)
2021
38) Y. Pan, X. Liu†, J. Yang, W. J. Yoo, J. Sun†, Controlling Carrier Transport in Vertical MoTe2/MoS2 van der Waals Heterostructures, ACS Applied Materials & Interfaces 13, 54294 (2021)
37) M.A. Khan, J. Sun, B. Li, A. Przybysz, and J. Kosel, Magnetic Sensors — A Review and Recent Technologies, Engineering Research Express 3, 022005 (2021)
36) X. Liu, Y. Pan, J. Yang, Deshun Qu, Huamin Li, W. J. Yoo†, J. Sun†, High-performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions, Applied Physics Letters 118, 233101 (2021)
35) G. Shao, X.-X. Xue, M. Yang, J. Yang, X. Liu, H. Lu, Y. Jiang, Y. Jin, Q. Yuan, J. Sun, H. Li, G. Hong, X. Chen, Y. Feng, and S. Liu, Modulated Anisotropic Growth of 2D SnSe Based on the Difference in a/b/c-Axis Edge Atomic Structures, Chemistry of Materials 33, 4231 (2021)
34) Z. Wang, Y. Yuan, X. Liu, H. Mizuta, J. Sun†, Current Induced Complementary Doping to Graphene from Hydrogen Silsesquioxane Passivation Layer, Physica Status Solidi (RRL)–Rapid Research Letters 15, 202100151 (2021)
33) Y. Yuan, Y. Duan, Z. Wang, J. Sun†, Filamentary Superconductivity in Wrinkled PtSe2, Journal of Physics D: Applied Physics 54, 215302 (2021)
32) W. Wang, Y. Yuan, X. Liu, M. Muruganathan, H. Mizuta, J. Sun†, Double Quantum Dot-like Transport in Controllably Doped Graphene Nanoribbon, Applied Physics Letters 118, 083105 (2021)
31) S. Peng, F. Ouyang, J. Sun, A. Guo, T. Chakraborty, W. Luo, Isotropic all-electric spin analyzer based on a quantum ring with spin-orbit couplings, Applied Physics Letters 118, 082402 (2021)
2020
30) X. Liu, X. Zhou, Y. Pan, J. Yang, H. Xiang, Y. Yuan, S. Liu, H. Luo, D. Zhang†, J. Sun†, Charge-ferroelectric transition in ultrathin Na0.5Bi4.5Ti4O15 flake probed via dual-gated full van der Waals transistor, Advanced Materials 32(49), 2004813 (2020) （该工作被materialsviewschina, X-MOL 等媒体报道）
29) X. Liu, D. Qu, L. Wang, M. Huang, Y. Yuan, P. Chen, Y. Qu†, J. Sun†, W. J. Yoo†, Charge density depinning in defective MoTe2 transistor by oxygen intercalation, Advanced Functional Materials 30(50), 2004880 (2020)
28) J. Sun†, R. Deacon, X. Liu, J. Yao, K. Ishibashi, Spin Filtering in Germanium/Silicon Core/Shell Nanowires with Pseudo-Helical Gap, Applied Physics Letters 117(5), 052403 (2020) （该工作被遴选为Editor’s Pick）
27) X. Liu, D. Qu, Y. Yuan, J. Sun†, W. J. Yoo†, Self-terminated surface monolayer oxidation induced robust degenerate doping in MoTe2 for low contact resistance, ACS Applied Materials & Interfaces 12(23), 26586 (2020)
26) J. Sun†, R. Deacon, W. Luo, Y. Yuan, X. Liu, H. Xie, Y. Gao, K. Ishibashi, Asymmetric Fermi Velocity Induced Chiral Magnetotransport Anisotropy in the Type-II Dirac Semi-metal PtSe2, Communications Physics 3, 93 (2020)
25) X. Liu, Y. Yuan, Z. Wang, R. S. Deacon, W. J. Yoo, J. Sun†, and K. Ishibashi, Directly Probing Effective-Mass Anisotropy of Two-Dimensional ReSe2 in Schottky Tunnel Transistors, Physical Review Applied 13, 044056 (2020)
24) Y. Jing, B. Liu, X. Zhu, F. Ouyang, J. Sun†, Y. Zhou†, Tunable electronic structure of two-dimensional transition metal chalcogenides for optoelectronic applications, Nanophotonics 9, 1675 (2020)
2019
23) X. Zhu, A. Li, D. Wu, P. Zhu, H. Xiang, S. Liu, J. Sun, F. Ouyang, Y. Zhou, X. Xiong, Tunable Large-area Phase Reversion in Chemical Vapor Deposited Few-layer MoTe2 Films, Journal of Materials Chemistry C 7(34), 10598 (2019)
22) Y.-H. Yuan, X. H. Wang, J. Kosel, J. Sun†, Quantum Oscillations on the Surface of InAs Epilayer, Physica E: Low dimensional Systems and Nanostructures 114, 113604 (2019)
21) Z. Wang, Y.-H. Yuan, X. Liu, J. Sun†, M. Muruganathan, H. Mizuta, Quantum Dot Formation in Controllably Doped Graphene Nanoribbon, ACS Nano 13(7), 7502 (2019)
20) X. Liu, Y.-H. Yuan, D. Qu, J. Sun†, Ambipolar MoS2 Field Effect Transistor by Spatially Controlled Chemical Doping, Physica Status Solidi (RRL)–Rapid Research Letters 13, 1900208 (2019)
19) R. Wang, R. S. Deacon, J. Sun, J. Yao, C. M. Lieber and K. Ishibashi, Gate Tunable Hole Charge Qubit Formed in a Ge/Si Nanowire Double Quantum Dot Coupled to Microwave Photons, Nano letters 19(2), 1052 (2019)
2018
18) J. Sun†, R. S. Deacon, R. Wang, J. Yao, C. M. Lieber and K. Ishibashi, Helical Hole State in Multiple Conduction Modes in Ge/Si Core/Shell Nanowire, Nano Letters 18(10), 6144 (2018)（自然科学基金委员会《中国科学基金》期刊亮点报道Science Foundation in China, 26(4), 28 (2018)）
17) Z. W. Wang, J. Sun†, M. Muruganathan, and H. Mizuta, Electrically Tunable Localized States in Sub-band of Bilayer Graphene Nanoribbon, Applied Physics Letters 113(13), 133101 (2018)
加入中南大学前
16) J. Sun†, M. Muruganathan, N. Kanetake, and H. Mizuta, Locally-Actuated Graphene-Based Nano-Electro-Mechanical Switch, Micromachines 7(7), 124 (2016) (邀稿)
15) J. Sun†, M. Muruganathan, and H. Mizuta, Room Temperature Detection of Individual Molecular Physisorption using Suspended Bilayer Graphene, Science Advances 2(4), e1501518 (2016) （该工作被AAAS EurekAlert!, ACS Chemical & Engineering News, ScienceDaily, phys.org, Nanowerk, The Engineer Magazine, DailyMail, La Vanguardia, The Hindu, 人民网, 日刊工业新闻等媒体报道）
14) J. Sun†, M. E. Schmidt, H. Chong, M. Muruganathan, and H. Mizuta, Large-Scale Nanoelectromechanical Switches Based on Directly Deposited Nanocrystalline Graphene on Insulating Substrates, Nanoscale 8, 6659 (2016)（该工作被ScienceDaily, phys.org, Nanowerk, The Engineer Magazine 等媒体报道）
13) M. Muruganathan, J. Sun, T. Imamura, and H. Mizuta, Electrically Tunable van der Waals Interaction in Graphene-Molecule Complex, Nano Letters 15, 8176 (2015) （该成果被Nature Materials 研究亮点报道, Nature Materials,15(3) (2016) DOI: 10.1038/nmat4530 ）
12) J. Sun†, T. Iwasaki, M. Muruganathan, and H. Mizuta, Lateral plasma etching enhanced on/off ratio in graphene nanoribbon field-effect transistor, Applied Physics Letters 106, 033509 (2015)
11) T. Iwasaki†, J. Sun†, N. Kanetake, T. Chikuba, M. Akabori, M. Muruganathan, and H. Mizuta, Hydrogen Intercalation: An Approach to Eliminate Silicon Dioxide Substrate Doping to Graphene, Applied Physic Express 8, 015101 (2015)
10) J. Sun†, W. Wang, M. Muruganathan, and H. Mizuta, low pull-in voltage graphene electromechanical switch fabricated with a polymer sacrificial spacer, Applied Physics Letters 105, 033103 (2014) （该成果被日刊工业新闻, 日经新闻, The Hokkoku News, Nanotech Japan等媒体报道，并在日本未来技术The Mynavi News排行榜位列该月第一技术热点.）
9) J. Sun†, Y-A. Soh, and J. Kosel, Geometric Factors in Magnetoresistance of n-doped InAs Epilayers, Journal of Applied Physics 114, 203903 (2013)
8) J. Sun† and J. Kosel, A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epi-layer, IEEE Electron Device Letters 34(4), 547 (2013)
7) J. Sun† and J. Kosel, Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrids: A Review, Materials 6, 500 (2013) （邀稿综述，并收录于ChemInform, 44(47) (2013)）
6) J. Sun†, and J. Kosel, The Influence of Semiconductor/Metal Interface Geometry in an EMR Sensor, IEEE Sensors Journal 13(2), 664 (2013)
5) J. Sun† and J. Kosel, Hall Effect Enhanced Low-Field Sensitivity in a Three-contact Extraordinary Magnetoresistance Sensor, Applied Physics Letters 100, 232407 (2012)
4) J. Sun†, Y-A. Soh, S. Patil, and J. Kosel, Strong Temperature Dependence of Extraordinary Magnetoresistance Correlated to Mobility in a Two-contact Device, Applied Physics Express 5, 033002 (2012)
3) J. Sun†, C. Gooneratne, and J. Kosel, Design Study of a Bar-type EMR Device, IEEE Sensors Journal 12(5), 1356 (2012)
2) J. Sun† and J. Kosel, Room Temperature Inductively Coupled Plasma Etching of InAs/InSb in BCl3/Cl2/Ar, Microelectronic Engineering 98, 222 (2012)
1) J. Sun†, and J. Kosel, Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor, Journal of Superconductivity and Novel Magnetism 25(8), 2749 (2012)