一、部分学术论文
1. Guangdong Zhou*, Jie Li, Qunliang Song, Lidan Wang , Zhijun Ren, Bai Sun , Xiaofang Hu, Wenhua Wang , Gaobo Xu , Xiaodie Chen , Lan Cheng , Feichi Zhou & Shukai Duan; Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing, Nature Communications, 2023,14,1,8489. IF=14.7 引用34次
https://doi.org/10.1038/s41467-023-43944-2
& No. 1 多模态多功能神经形态视觉视觉系统架
2. Guangdong Zhou*; Bai Sun; Xiaofang Hu; Linfeng Sun; Zhuo Zou; Bo Xiao; Wuke Qiu; Bo Wu; Ji e Li; Juanjuan Han; Liping Liao; Cunyun Xu; Gang Xiao; Lihua Xiao; Shaohui Zheng; Lidan Wang; Qun liang Song*; Shukai Duan* ; Negative photoconductance effect: an extension function of the TiOx-bas ed memristor, Advanced Science, 2021, 8, 2003765. IF=16.8 引用22次
https://doi.org/10.1002/advs.202003765
& No. 1 在Ag/GQDs/TiOx/F-doped SnO2 中实现了阻变突触与负光电导共存
3. Guangdong Zhou; Zhijun Ren; Bai Sun; Jinggao Wu; Zhuo Zou; Shaohui Zheng; Lidan Wang; Shu kai Duan; Qunliang Song*; Capacitive effect: An original of the resistive switching memory, Nano Energy, 2020, 68, 104386. IF=17.88 ESI 1% 高被引, 作为智能芯片领域全球核心论文，被列入2020年中国工程院发布的《全球工程前沿2020》报告 （中国3家单位入选，一共9篇文章）本工作为西南大学3篇代表作中的一篇。 当前引用67次.
https://doi.org/10.1016/j.nanoen.2019.104386
& No. 2 首次绘制了忆阻突触演化图谱
4. Guangdong Zhou; Zhijun Ren; Lidan Wang; Bai Sun; Shukai Duan; Qunliang Song*; Artificial and wearable albumen protein memristor arrays with integrated memory logic gate functionality, Materials Horizons, 2019, 6(9): 1877-1882. IF=14.35 引用76次. 期刊2019年度最受欢迎文章，获首届川渝学术论文二等奖。
https://doi.org/10.1039/C9MH00468H
& No. 3 研制了天然蛋白质自支撑柔性忆阻器及交叉阵列，开发了忆阻逻辑门单元
5. Guangdong Zhou; Zhijun Ren; Lidan Wang; Jinggao Wu; Bai Sun; Ankun Zhou; Shaohui Zheng; Shukai Duan*; Qunliang Song*; Resistive switching memory integrated with amorphous carbon-based nanogenerators for self-powered device, Nano Energy, 2019, 63，103793. IF=17.88 引用77次.
https://doi.org/10.1016/j.nanoen.2019.05.079
& No. 4 神经突触器件的自我驱动系统与集成
6. Guangdong Zhou; Shukai Duan; Ping Li; Bai Sun; Bo Wu; Yanqing Yao; Xiude Yang; Juanjuan H an; Gang Wang; Liping Liao; Cunyan Lin; Wei Hu; Cunyun Xu; Debei Liu; Tian Chen; Lijia Chen; Anku n Zhou; Qunliang Song* ; Coexistence of Negative Differential Resistance and Resistive Switching M emory at Room Temperature in TiOx Modulated by Moisture, Advanced Electronic Materials, 2018, 4，1 700567. IF= 7.29 ESI 1% 高被引 引用107次.
https://doi.org/10.1002/aelm.201700567
& No. 5 阻变突触功能层表面与亚表面的氧空位、水分子反应动力学过程
7. Guangdong Zhou*; Zhongrui Wang; Bai Sun; Feichi Zhou; Linfeng Sun; Shukai Duan ; Volatile and nonvolatile memristive devices for neuromorphic computing, Advanced Electronic Materials, 2022, 2101127，IF= 7.29
https://doi.org/10.1002/aelm.202101127
& No. 6 易失与非易失性阻变突触器件在神经形态计算芯片中应用
8. Xiaofang Hu; Wenhua Wang; Bai Sun; Yucheng Wang; Jie Li; Guangdong Zhou*; Refining the negative differential resistance effect in a TiOx-based memristor, Journal of Physical Chemistry L etters , 2021, 12(22): 5377-5383. IF= 6.48 当前引用10次，邀请文章 ，封面文章
https://doi.org/10.1021/acs.jpclett.1c01420
& No. 7 阻变突触功能层纳米孔阵列制备以及物理化学反应动力学机制
9. Guangdong Zhou*， Bai Sun, Zhijun Ren,Lidan Wang, Cunyun Xu, Bo Wu, Ping Li, Yanqing Yao and Shukai Duan，Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture ，Chemical Communications, 2019, 55, 9915-9918. IF= 6.22 当前引用32次，封面文章 https://doi.org/10.1039/C9CC04069B
& No. 8 光电阻变突触特性以及光控忆阻逻辑门单元
10. Guangdong Zhou, Jinggao Wu, Lidan Wang, Bai Sun, Zhijun Ren, Cunyun Xu, Yanqing Yao, Liping Liao, Gang Wang, Shaohui Zheng, Pinaki Mazumder, Shukai Duan and Qunliang Song*, Evolution map of the memristor: from pure capacitive state to resistive switching state, Nanoscale, 2019, 11, 17222-17229. IF= 7.23 当前引用28次.
https://doi.org/10.1039/C9NR05550A
11. Guangdong Zhou*, Xiude Yang, Lihua Xiao, Bai Sun, and Ankun Zhou, Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory, Applied Physics Letters, 2019, 114, 163506. IF= 3.57 ESI 1% 高被引. 当前引用62次
https://doi.org/10.1063/1.5089147
12. Guangdong Zhou, Bai Sun, Yanqing Yao, Huihui Zhang, Ankun Zhou, Kamal Alameh, Baofu Ding, and Qunliang Song*, Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires, Applied Physics Letters, 2016, 109, 143904. F= 3.57 ESI 1% 高被引. 当前引用81次
https://doi.org/10.1063/1.4962655
13. Guangdong Zhou*, Bo Wu, Xiaoqin Liu, Ping Li, Shuangju Zhang, Bai Sun and Ankun Zhou, Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix, Physical Chemistry Chemical Physics, 2016, 18, 6509. IF= 4.92 当前引用24次
https://doi.org/10.1039/C5CP07650A
14. Zhijun Ren, Guangdong Zhou,* Multilevel resistive switching memory behaviors arising from ion diffusion and photoelectron transfer in a-Fe2O3 nano-island arrays, Physical Chemistry Chemical Physics, 2020, 22, 2743-2747. IF= 3.57 当前引用6次
https://doi.org/10.1039/C9CP06392G
15. Guangdong Zhou, Yanqing Yao, Zhisong Lu, Xiude Yang, Juanjuan Han, Gang Wang, Xi Rao, Ping Li, Qian Liu, Qunliang Song*, Hydrogen peroxide modified egg albumen for transparent and flexible resistive switching memory, Nanotechnology, 2017,28,425202. IF= 3.57 当前引用32次
https://doi.org/10.1088/1361-6528/aa8397
16. Guangdong Zhou, Zhisong Lu, Yanqing Yao, Gang Wang, Xiude Yang, Ankun Zhou, Ping Li, Baofu Ding, Qunliang Song*, Mechanism for bipolar resistive switching memory behaviors of a self-assembled 3-demension MoS2 microsphere composed active layer, Journal of Applied Physics, 2017, 121, 155302. IF=2.1 当前引用29次
https://doi.org/10.1063/1.4980173
17. Guangdong Zhou*, Bai Sun, Ankun Zhou, Bo Wu, Haishen Huang, A larger nonvolatile bipolar resistive switching memory behavior fabricated using eggshells, Current Applied Physics, 2017, 17, 235-239. IF=2.1 当前引用30次
https://doi.org/10.1016/j.cap.2016.09.018
18. Guangdong Zhou*, Bo Wu, Zhiling Li, Zhijun Xiao, Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices, Current Applied Physics, 2015, 15, 279-284. IF=2.1 当前引用21次
https://doi.org/10.1016/j.cap.2014.12.024
19. Guangdong Zhou*, Bo Wu, Zhiling Li, Zhijun Xiao, Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices, Current Applied Physics, 2015, 15, 279-284. IF=2.1 当前引用21次
https://doi.org/10.1016/j.cap.2014.12.024
20. Guangdong Zhou*, Wenxi Zhao, Xiaoqing Ma, Ankun Zhou, Current-voltage hysteresis of the composite MoS2-MoOx<3 nanobelts for data storage, Journal of Alloys and Compounds, 2016, 679, 47-53. IF=5.1 当前引用15次
https://doi.org/10.1016/j.jallcom.2016.03.258
21. Guangdong Zhou*, Lihua Xiao , Shuangju Zhang , Bo Wu, Xiaoqin Liu, Ankun Zhou, Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory, Journal of Alloys and Compounds, 2017, 722, 753-759. IF=5.1 当前引用33次
https://doi.org/10.1016/j.jallcom.2017.06.178
22. Xiude Yang, Zhijun Ren, Fuyan Pan, Bo Wu, Ping Li, Guangdong Zhou*，Visible light-induced resistive switching behaviors in single MnOx nanorod: Reversing between resistor and memristor, Journal of Alloys and Compounds， 2019, 802,546-552. IF=5.1 当前引用6次
https://doi.org/10.1016/j.jallcom.2019.06.131
23. Guangdong Zhou*, Yanqing Yao, Xusheng Zhao, Xiaoqing Liu, Bai Sun and Ankun Zhou, Band gap energies for white nanosheets/yellow nanoislands/purple nanorods of CeO2, RSC Advances, 2016, 6, 59370-59374. IF=3.9 当前引用22次
https://doi.org/10.1039/C6RA11553E
24. Xiu De Yang, Juan Juan Han, Gang Wang, Li Ping Liao, Cun Yun Xu, Wei Hu, Ping Li, Bo Wu, Ahmed Mourtada Elseman, Guangdong Zhou* and Qunliang Song*, Robust perovskite-based triboelectric nanogenerator enhanced by broadband light and interface engineering, Jornal of Materials Science 2019, 54, 9004–9016. IF=4.2 当前引用10次
https://linkspringer.53yu.com/article/10.1007/s10853-019-03351-9#article-info
25. Wenhua Wang, Guangdong Zhou* (共同一作兼通讯), Yuchen Wang,a Bai Sun,c Mengyuan Zhou,a Changxiang Fang,a Cunyun Xu,a Jun Dong,a Feng Wang, d Shukai Duan b and Qunliang Song*， An analogue memristor made of silk fibroin polymer, Journal of Chemistry Materials C 2021, 9, 14583–14588. IF=7.85 当前引用2次
https://doi.org/10.1039/D1TC03315H
26. Shouhui Zhu, Guangdong Zhou (共同一作), Weiyong Yuan, Shuangsuo Mao, Feng Yang, Guoqiang Fu, Bai Sun*, Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor, J. Colloid. Interf. Sci. 2020, 560, 565-571. IF=8.1 当前引用14次
https://doi.org/10.1016/j.jcis.2019.10.087
27. Bai Sun, Guangdong Zhou (共同一作), Guangdong Zhou, Ke Xu, Qiang Yu, and Shukai Duan, Self-Powered Memory Systems, ACS Materials Letters 2020, 2, 1669−1690. IF=10.55 当前引用8次
https://doi.org/10.1021/acsmaterialslett.0c00364
28. Bai Sun , Ming Xiao, Guangdong Zhou (共同一作), Zhijun Ren, Y.N. Zhou*, Y. A. Wu, None zero-crossing current-voltage hysteresis behavior in memristive system, Materials Today Advances 2020, 6, 100056. IF=11.23 当前引用19次
https://doi.org/10.1016/j.mtadv.2020.100056
29. Bai Sun , Tao Guo , Guangdong Zhou (共同一作), Shubham Ranjan , Yixuan Jiao, Lan Wei, Y. Norman Zhou *, Yimin A. Wu, Synaptic devices based neuromorphic computing applications in artificial intelligence, Materials Today Physics 2020, 75, 104938. IF=11.58 当前引用17次
https://doi.org/10.1016/j.nanoen.2020.104938
30. Bai Sun, Guangdong Zhou (共同一作), Linfeng Sun, Hongbin Zhao, Yuanzheng Chen, Feng Yang, Yong Zhao and Qunliang Song*， ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing，Nanoscale Horizons, 2021, 6, 939-970. IF=12 当前引用7次
https://pubsrsc.53yu.com/en/content/articlehtml/2021/nh/d1nh00292a
31. Bai Sun, Guangdong Zhou (共同一作), Tao Guo, Y. Norman Zhou , Yimin A. Wu *, Biomemristors as the next generation bioelectronics, Nano Energy 2020, 75, 104938. IF=17.88 ESI 1% 高被引, 当前引用45次.
https://doi.org/10.1016/j.nanoen.2020.104938
32. Juanjuan Han, Xiude Yang, Liping Liao, Guangdong Zhou, Gang Wang, Cunyun Xu, Wei Hu, Mbeng Elisabeth Reine Debora, Qunliang Song*, Photoinduced triboelectric polarity reversal and enhancement of a new metal/semiconductor triboelectric nanogenerator, Nano Energy, 2019,58, 331-337. IF=17.881
33. Bai Sun, Yuanzheng Chen, Ming Xiao, Guangdong Zhou, Shubham Ranjan, Wentao Hou, Xiaoli Zhu, Yong Zhao, Simon A.T. Redfern and Y. Norman Zhou*, A unified capacitive-coupled memristive model for the nonpinched current−voltage hysteresis loop, Nano Letters, 2019, 199, 6461-6465. IF=12.279
34. C.Y. Xu, W. Hu, G. Wang, L. Niu, A.M. Elseman, L. Liao, Y. Q. Yao, G. B. Xu, D. B. Liu, Guangdong Zhou, Pi Li, Qunliang Song*, Coordinated Optical Matching of a Texture Interface Made from Demixing Blended Polymers for High-Performance Inverted Perovskite Solar Cells, , ACS Nano, 2020, 14, 1, 196-203. IF=13.279
35. G. Wang, L. P. Liao, A. M. Elseman, Y. Q. Yao, C. Y. Lin, W. Hu, D. B. Liu, L. B. Niu, Guangdong Zhou, P. Li, L. Chen, Q. Song*, An internally photoemitted hot carrier solar cell based on organic-inorganic perovskite, Nano Energy, 2020, 68, 104383. IF=17.881
36. B. Sun, X. Zhang, Guangdong Zhou, T Yu, S Mao, S. Zhu, A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate, J. Colloid. Interf. Sci.，2018, 520, 19-24. IF=8.5
37. B. Sun, Y. Chen, L. Tao, H. Zhao, Guangdong Zhou, Y. Zhao, Nanorod Array of SnO2 Quantum Dot Interspersed Multiphase TiO2 Heterojunctions with Highly Photocatalytic Water Splitting and Self-Rechargeable Battery-Like, ACS Applied Materials & Interfaces, 2018, 11, 2071-2081. IF=10.55
38. Y. Yao, G. Wang, L. Liao, D. Liu, Guangdong Zhou, C Xu, X. Yang and Q. L. Song, Enhancing the open circuit voltage of PEDOT: PSS-PC61BM based inverted planar mixed halide perovskite solar cells from 0.93 to 1.05 V by simply oxidizing, Organic Electronics, 2018, 59, 260-265. IF=3.5
39. B. Sun, S. Mao, S. Zhu, Guangdong Zhou, Y. Xia, Y. Zhao, Improved Rate and Cycling Performances of Electrodes Based on BiFeO3 Nanoflakes by Compositing with Organic Pectin for Advanced Rechargeable Na-Ion, ACS Applied Nano Materials, 2018, 1, 1291-1299. (IF=10).
40. Wu, Pentacene as a hole transport material for high performance planar perovskite solar cells, Current Applied Physics, 2018, 18, 1095-1100. IF=2.1
41. Y. Xia, B. Sun, H. Wang, Guangdong Zhou, X. Kan, Y. Zhang, Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film, Applied Surface Science, 2017, 426, 812-816. IF=6.1
42. X. Zhao, J. Xiang, D. Liu, D. Zhou, G. Wang, Guangdong Zhou, Q. L. Song, Impact of alkyl chain length of 1, n-diiodoalkanes on PC71BM distribution in both bulk and air surface of PTB7: PC71BM film, Organic Electronics, 2016, 37, 358-365. IF=3.551
43. B Sun, X Zhang, Guangdong Zhou, C. Zhang, P. Li, Y. Xia, Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices. J. Alloys. Compounds, 2017, 694, 464-470. IF=5.1
44. B. Sun, T Guo, Guangdong Zhou, S Ranjan, W Hou, Y Hou, Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour. J. Colloid. Interf. Sci., 2019, 553, 682-687. IF=8.5
45. S. Zhu, B. Sun, S. Ranjan, X. Zhu, Guangdong Zhou, H Zhao, Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state, APL Mater. 2019, 7, 081117. IF=4.296
46. Q Xu, L Xiao, J Ran, R Tursun, Guangdong Zhou, Cs0.33WO3 as a high-performance transparent solar radiation shielding material for windows, J. Appl. Phys. 2019, 124, 193102. IF=2.1
47. B. Wu, H. Huang, Guangdong Zhou, Y. Feng, Magnetism, and Electronic Properties of Inverse Herterojuction: Heusler The Alloy Role Ti2CoAl/MgO (100) of Interfaces. Recent Advances in Novel Materials for Future Spintronics, 2019, 89. IF=2
48. B Wu, H Huang, P Li, T Zhou, Guangdong Zhou, Y Feng, First-principles study on the structure, magnetism, and electronic properties in inverse Heusler alloy Ti2FeAl/GaAs (100) heterojunction, Superlattices and Microstructures, 2019, 133, 106205. IF=2.3
49. S. Zhu, B Sun, Y Chen, T Li, Guangdong Zhou, H Zhao, An excellent pH-controlled resistive switching memory device based on self-colored (C 7 H 7 O 4 N) n extracted from a lichen plant, J. Mater. Chem. C. 2019, 7, 7593-7600. IF=7.8
50. Y Q Yao, F. Lv, L Luo, L Liao, G Wang, D Liu, C Xu, Guangdong Zhou, Highly Efficient Sn–Pb Perovskite Solar Cell and High‐Performance All‐Perovskite Four‐Terminal Tandem Solar Cell. Solar RRL, 2019, 1900396. IF=7.5
51. B Wu, H Huang, Guangdong Zhou, X Yang, P Li, Half-metallic ferrimagnets behavior of a new quaternary Heusler alloy CrCoScZ (Z= Si, Ge, Sn). The European Physical Journal B, 2019, 92(6), 119. IF=2.0
52. B Sun, X Zhang, Guangdong Zhou, P Li, Y Zhang, H Wang, An organic nonvolatile resistive switching memory device fabricated with natural pectin from fruit peel. Organic Electronics, 2017, 42, 181-186. IF=3.5
53. P Li, B. Sun, X Zhang, Guangdong Zhou, Y Xia, L Gan, Y Zhang, Effect of temperature on the magnetism and memristive memory behavior of MoSe2 nanosheets, Materials Letters., 2017, 202, 13-16. IF=3.0
54. P. Li, X De Yang, HS Huang, Guangdong Zhou, QL Song, The direct observation of electron backflow in an organic heterojunction formed by two n-type materials. Phys. Chem. Chem. Phys. 20(12), 8064-8070. IF=3.5
55. X. D.Yang, Y. Hu, G. Wang, Guangdong Zhou, P. Li, B. Wu, Q.L. Song, Thermal evaporated C60 modified by Pt as counter electrode for dye-sensitized solar cells, Chem. Phys. 2018, 513, 73-77. IF=1.82
56. Y. Q. Yao, F Wu, D Liu, C Lin, X Rao, R Wu, Guangdong Zhou, Q.L. Song, The interface degradation of planar organic–inorganic perovskite solar cell traced by light beam induced current (LBIC). RSC Advances, 7(68), 42973-42978. IF=4.1
57. X Yang, J Han, F Wu, X Rao, Guangdong Zhou, C Xu, P Li, Q Song, A novel retractable spring-like-electrode triboelectric nanogenerator with highly-effective energy harvesting and conversion for sensing road conditions, RSC Advances, 7, 50993-51000. IF=4.1
58. P. Li, Y. C. Yang, H.S. Huang, X De Yang, Guangdong Zhou, QL Song, Improved charge transport ability of polymer solar cells by using NPB/MoO3 as anode buffer layer. Solar Energy, 2018, 170, 212-216. IF=5.5
59. W. Hu, C.Y. Xu, Y.Q Yao, LP Liao, Guangdong Zhou, QL Song, High Open-Circuit Voltage of 1.134 V for Inverted Planar Perovskite Solar Cells with Sodium Citrate-Doped PEDOT: PSS as a Hole Transport Layer. ACS Applied Materials & Interfaces, 2018, 11, 22021-22027. IF=10
60. Guangdong Zhou, S. Y. Zhang, Y. T. Tu, J. Li, P. Chen, J. Y. Dai, and X. Y. Qiu*, Anisotropy of Weak Ferromagnetism of HfAlOx Film Deposited by Magnetron Sputtering, Integrated Ferroelectrics, 2012, 134, 13-15. IF=~
61. Xiao Yan Qiu*(导师), Guangdong Zhou, J. Li, Y. Chen, X.H. Wang, J. Y. Dai, Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate, Thin Solid Films, 2014,562, 674–679. IF=1.888
62. Guangdong Zhou, X. F. Chen, Y. T. Tu, Z. J. Liu,J. Li, P. Chen, X.Y. Qiu, weak ferromagnetism of HfOx<2 thin films with atmospheric deposition and post-annealing treatment, Science of China (Physics, Mechanics and Astronomy), 2012, 42, 926-933. IF=1.03
63. Jie Li, Guangdong Zhou, Yingying Li, Jiahao Chen, Yuan Ge, Yan Mo, Yuanlei Yang, Xicong Qian, Wenwu Jiang, Hongbo Liu, Mingjian Guo, Lidan Wang, Shukai Duan*, Reduction 93.7% time and power consumption using a memristor‑based imprecise gradient update algorithm, Artificial Intelligence Review, 2022, 55(1), 657-677. IF=8.5
64. Y. Zhou, X. F. Hu. Guangdong Zhou, Lidan Wang, Shukai Duan*, L. Det al, IEEE Trans. Cir. Syst. 2021, 68, 4851-4861. IF=3.2
65. Changrong Liao, Dong Liu, Zheng Liu, Jinchengyan Wang, Xuesen Xie, Jie Li,* and Guangdong Zhou, Coexistance of the Negative Photoconductance Effect and Analogue Switching Memory in the CuPc Organic Memristor for Neuromorphic Vision Computing, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2024,15,1948-7185. IF=4.9
https://pubs.acs.org/doi/10.1021/acs.jpclett.4c01071?ref=pdf
66. Dengshun Gu, Bingtao Yan, Bochang Zhang, Changrong Liao, Xiude Yang, Ping Li,* Bo Wu,* Bai Sun,* and Guangdong Zhou*,In-Sensor Reservoir Computing Based on Self-Rectifying TiOx Photosynapse for Image Recognition and Speech Signal Processing, ACS PHOTONICS, 2024,11,4444-4452. IF=6.5
https://doi.org/10.1021/acsphotonics.4c01415
67. Chunrong Du , Xiaoyue Ji , Zhekang Dong , Dengshun Gu , Bingtao Yan , Xiaofang Hu , Yue Zhou , Jia Yan , Lidan Wang ,Shukai Duan, Guangdong Zhou, Investigation of the TaOx unipolar switching memory on high efficiency computing, JOURNAL OF ALLOYS AND COMPOUNDS, 2025,1010,0925-8388. IF=6.5
https://doi.org/10.1016/j.jallcom.2024.177020
二、科研项目
1. 西南大学人才引进项目, SWU020019, 视觉、听觉、触觉多维类脑感知芯片, 2021-04 至 2024-12, 300万元, 在研, 主持
2. 重庆盛科纳科技有限公司, 横向课题-技术研发, SKN-2022-0009, 智能信息器件多模态原位测试探针 台系统, 2022-03 至 2022-10, 125万元, 在研, 主持
3. 博士后创新人才支持计划, CQBX201806, 极端环境可穿戴、高效、 绿 色忆阻器的研制、 计算仿真、集成的研究, 2018-11 至 2020-08, 60万元, 结题, 主持
4. 贵州省科技厅, 贵州省自然科学基金面上项目, 黔科合基础[2020]1Y024, 界面诱导负光电导效应实现 多阻态、低功耗的可行性研究, 2020-01 至 2022-01, 10万元, 在研, 主持
5. 重庆市科技局, 重庆市自然科学基金面上项目, cstc2020jcyj-msxmX0648, 负光电导与忆阻效应共存 在低功耗类脑芯片中的应用研究, 2020-07 至 2023-06, 10万元, 在研, 主持
6. 国家自然科学基金委员会, 联合基金项目, U20A20227, 受脑启发可动态重构存算融合的类脑计算架构 , 2021-01-01 至 2024-12-31, 258万元, 在研, 参与
7. 国家自然科学基金委员会, 面上项目, 61976246, 轻量级忆阻神经形态计算系统研究与鲁棒性分析, 2 020-01-01 至 2023-12-31, 61万元, 在研, 参与
8. 国家自然科学基金委员会, 面上项目, 51776046, 新型LaB6基等离激元纳米流体的太阳能光热转换机 理及其调控研究, 2018-01-01 至 2021-12-31, 62万元, 在研, 参与
9. 国家自然科学基金委员会, 应急管理项目, 61751501, 窗用WO3基近红外吸收材料透明屏蔽机理及性能 调控的第一性原理研究, 2018-01-01 至 2018-12-31, 10万元, 结题, 参与
10. 国家自然科学基金委员会, 面上项目, 11774293, 钙钛矿太阳能电池界面的原位光致发光研究, 2018- 01-01 至 2021-12-31, 65万元, 在研, 参与
三、专利、奖励与其他
1. 周广东; 段书凯; 王丽丹; 胡小芳 ; 一种异质结自整流忆阻器及其制备方法, 2024-08-08 , 中国, 202210589118.7 (发明专利)
2. 周广东; 段书凯; 王丽丹; 胡小芳 ; 一种Fe2O3纳米材料合成以及在脑智能芯片中应用, 2019-1-18, 中国, 201910049213.6 (发明专利)
3. 周广东; 段书凯; 王丽丹; 胡小芳 ; 一种高介电蛋清薄膜材料的制备方法以及可穿戴电子器件, 2019 -1-23, 中国, 201910059887.4 (发明专利)
4. 周广东; 任芝君; 王丽丹; 孙柏; 段书凯; 首届川渝科技学术大会论文奖, 四川省科学技术协会，重庆市科学技术协会, 科技进 步, 省部二等奖, 2020年度 (科研奖励)
5. 周广东 ; Co-existence of the positive/negative photoconductance in memristor for neuromor thic vision system: the key materials, devices, and algorithms （忆阻器中正负光电导共存在神经形态 视觉系统中的应用：关键材料、器件和算法）, International Congress on Optics, Electronics, and Opto electronics , 西安, 2021-11-5至2021-11-8 (会议报告)
6. 周广东 ; 易失性与非易失性忆阻器的物理机理和应用, 第23届全国半导体物理学术会议, 西安, 2021 -7-8至2021-7-11 (会议报告)
7. 周广东 ; 柔性自支撑蛋白质忆阻器智能感知芯片研究, 海峡两岸暨港澳青年科学家智能可穿戴技术创 新论坛, 苏州日航国际酒店, 2021-10-30至2021-11-3 (会议报告)
8. 周广东 ; 光电智能信息材料与器件, 西部材料大会, 重庆, 2021-9-24至2021-9-26 (邀请报告)
9. 周广东 ; 易失和非易失性忆阻器在类脑芯片中的应用, 新兴电子材料与器件物理国际研讨会, 四川省成都市四川师范大学, 2021-6-18至2021-6-21 (邀请报告）
10. 周广东；天然蚕丝蛋白柔性阻变突触器件关键技术与芯片系统， 神经形态计算、蚕学基因、行为心理与脑机接口交叉融合沙龙会议，重庆，2022-4-13至2022-4-13 (会议组办）
11.周广东；指导毕业论文（设计）《基于FeOx忆阻器的模拟信号处理系统》被评为2024届本科优秀毕业论文（设计）二等奖