1.  Z. Wei †, J. Tang†, X. Li, Z. Chi, Y. Wang, Q. Wang, B. Han, B. Huang, J. Li, H. Yu, N. Li, H. Chen, J. Sun, L. Chen, K. Wu, P. Gao, C. He, W. Yang, D. Shi, R. Yang* and G. Zhang*, Wafer-scale Growth of Oxygen-substitution-doped Monolayer MoS2, Small Methods, 5, 2100091 (2021 Cover).

2.  J. Tang†, Z. Wei†, B. Han†, X. Li, Q. Wang, Z. Chi, X. Li, B. Huang, M. Liao, Y. Zhao, J. Liu, C. Shen, Y. Guo, J. Sun, P. Gao, H. Chen, W. Yang, R. Yang*, D. Shi and G. Zhang*. In-situ Oxygen Doping of Monolayer MoS2 for Band-gap Engineering, Small, 2004276 (2020 Cover).

3.  N. Li†, Q. Wang†, C. Shen, Z. Wei, H. Yu, J. Zhao, X. Lu, G. Wang, C. He, L. Xie, J. Zhu, L. Du, R. Yang*, D. Shi and G. Zhang*, Large-scale MoS2 FETs for Flexible and Transparent Electronics, Nature Electronics, 3, 711 (2020).

4.  Y. Huang†, Y. Pan†, R. Yang†, L. Bao, L. Meng, H. Luo, Y. Cai, G. Liu, W. Zhao, Z. Zhou, L. Wu, Z. Zhu, M. Huang, L. Liu, L. Liu, P. Cheng, K. Wu, S. Tian, C. Gu, Y. Shi, Y. Guo, Z. Cheng, J. Hu, L. Zhao, E. Sutter, P. Sutter*, Y. Wang, W. Ji*, X.-J. Zhou*, and H.-J. Gao*. Universal mechanical exfoliation of large-area 2D crystals, Nature Communications, 11, 2453, 2020.

5.  M. Liao†, Z. Wei†, L. Du†, Q. Wang, J. Tang, H. Yu, F. Wu, J. Zhao, X. Xu, B. Han, K. Liu, P. Gao, T. Polcar, Z. Sun, D. Shi, R. Yang* and G. Zhang*, Precise control the interlayer twist angle of large-scale MoS2 homostructures. Nature Communications, 11, 2153, 2020.

6.  J. Zhu†, Z.-C. Wang†, H. Dai†, Q. Wang, R. Yang*, H. Yu, M. Liao, J. Zhang, Wei Chen, Z. Wei, N. Li, L. Du, D. Shi, W. Wang, L. Zhang*, Y. Jiang* & G. Zhang*, Boundary activated hydrogen evolution reaction on monolayer MoS2. Nature Communications 10, 1348 (2019).

7.  N. Li, Z. Wei, J. Zhao, Q. Wang, C. Shen, S. Wang, J. Tang, R. Yang*, D. Shi G. Zhang*, Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics. Advanced Materials Interfaces 201802055 (2019, Back cover).

8.  R. Yang; S. Wu; D.M. Wang; G.B. Xie; M. Cheng; G.L. Wang; W. Yang; P. Chen; D.X. Shi & G.Y. Zhang*. Fabrication of high-quality all-graphene devices with low contact resistances. Nano Research 7, 1449 (2014).

9.  R. Yang; Z. W. Shi; L. C. Zhang; D. X. Shi and G. Y. Zhang*, Observation of Raman G-Peak Split for Graphene Nanoribbons with Hydrogen-Terminated Zigzag Edges. Nano Letters 2011, 11 (10), 4083-4088.

10. R. Yang; L. C. Zhang; Y. Wang; Z. W. Shi; D. X. Shi; H. J. Gao; E. G. Wang and G. Y. Zhang*, An Anisotropic Etching Effect in the Graphene Basal Plane. Advanced Materials 2010, 22 (36), 4014-4019.