杨蓉，湖南大学岳麓学者、教授/博导。入选中科院青促会会员，主持或参与国家自然科学基金委重点项目、面上项目，科技部重点研发计划，广东省重点研发计划等项目10余项。从事低维材料与器件相关的研究，致力于探索和推动二维半导体在柔性集成电路领域的应用。主要研究成果已在Nature Electronics， Advanced Materials， Nature Communications， Nano Letters， ACS Nano等国际重要期刊上合作发表SCI论文80余篇，Google Scholar引用超过5200余次，H-index 33。

科研项目：

1.  国家自然科学基金 优秀青年科学基金，62122084，2022.01-2024.12，主持

2.  国家自然科学基金 面上项目，12074412，2021.01-2024.12，主持

3.  广东省重点领域研发计划，202020080810200002，2020.8-2023.8，主持子课题

4.  国家自然科学基金 重点项目，11834017，2019.01-2023.12，参与

5.  国家自然科学基金 面上项目，11574361，2016.01-2019.12，主持

6.  国家自然科学基金 青年项目，11204358，2013.01-2015.12，主持

7. 科技部重点基础研究发展计划 973A类项目，2013CBA01602,2013.07-2018.08，参与

8. 科技部重大科学研究计划 青年项目，2013CB934500,2013.01-2017.08，参与

代表性工作：

1.  Z. Wei †, J. Tang†, X. Li, Z. Chi, Y. Wang, Q. Wang, B. Han, B. Huang, J. Li, H. Yu, N. Li, H. Chen, J. Sun, L. Chen, K. Wu, P. Gao, C. He, W. Yang, D. Shi, R. Yang* and G. Zhang*, Wafer-scale Growth of Oxygen-substitution-doped Monolayer MoS2, Small Methods, 5, 2100091 (2021 Cover).

2.  J. Tang†, Z. Wei†, B. Han†, X. Li, Q. Wang, Z. Chi, X. Li, B. Huang, M. Liao, Y. Zhao, J. Liu, C. Shen, Y. Guo, J. Sun, P. Gao, H. Chen, W. Yang, R. Yang*, D. Shi and G. Zhang*. In-situ Oxygen Doping of Monolayer MoS2 for Band-gap Engineering, Small, 2004276 (2020 Cover).

3.  N. Li†, Q. Wang†, C. Shen, Z. Wei, H. Yu, J. Zhao, X. Lu, G. Wang, C. He, L. Xie, J. Zhu, L. Du, R. Yang*, D. Shi and G. Zhang*, Large-scale MoS2 FETs for Flexible and Transparent Electronics, Nature Electronics, 3, 711 (2020).

4.  Y. Huang†, Y. Pan†, R. Yang†, L. Bao, L. Meng, H. Luo, Y. Cai, G. Liu, W. Zhao, Z. Zhou, L. Wu, Z. Zhu, M. Huang, L. Liu, L. Liu, P. Cheng, K. Wu, S. Tian, C. Gu, Y. Shi, Y. Guo, Z. Cheng, J. Hu, L. Zhao, E. Sutter, P. Sutter*, Y. Wang, W. Ji*, X.-J. Zhou*, and H.-J. Gao*. Universal mechanical exfoliation of large-area 2D crystals, Nature Communications, 11, 2453, 2020.

5.  M. Liao†, Z. Wei†, L. Du†, Q. Wang, J. Tang, H. Yu, F. Wu, J. Zhao, X. Xu, B. Han, K. Liu, P. Gao, T. Polcar, Z. Sun, D. Shi, R. Yang* and G. Zhang*, Precise control the interlayer twist angle of large-scale MoS2 homostructures. Nature Communications, 11, 2153, 2020.

6.  J. Zhu†, Z.-C. Wang†, H. Dai†, Q. Wang, R. Yang*, H. Yu, M. Liao, J. Zhang, Wei Chen, Z. Wei, N. Li, L. Du, D. Shi, W. Wang, L. Zhang*, Y. Jiang* & G. Zhang*, Boundary activated hydrogen evolution reaction on monolayer MoS2. Nature Communications 10, 1348 (2019).

7.  N. Li, Z. Wei, J. Zhao, Q. Wang, C. Shen, S. Wang, J. Tang, R. Yang*, D. Shi G. Zhang*, Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics. Advanced Materials Interfaces 201802055 (2019, Back cover).

8.  R. Yang; S. Wu; D.M. Wang; G.B. Xie; M. Cheng; G.L. Wang; W. Yang; P. Chen; D.X. Shi & G.Y. Zhang*. Fabrication of high-quality all-graphene devices with low contact resistances. Nano Research 7, 1449 (2014).

9.  R. Yang; Z. W. Shi; L. C. Zhang; D. X. Shi and G. Y. Zhang*, Observation of Raman G-Peak Split for Graphene Nanoribbons with Hydrogen-Terminated Zigzag Edges. Nano Letters 2011, 11 (10), 4083-4088.

10. R. Yang; L. C. Zhang; Y. Wang; Z. W. Shi; D. X. Shi; H. J. Gao; E. G. Wang and G. Y. Zhang*, An Anisotropic Etching Effect in the Graphene Basal Plane. Advanced Materials 2010, 22 (36), 4014-4019.