刘扬 - 中山大学 - 电子与信息工程学院

个人简介

刘扬，中山大学电子与信息工程学院教授，博士生导师，中山大学电力电子及控制技术研究所所长、广东省第三代半导体GaN材料与器件工程技术研究中心主任。2001年在国际著名异质材料外延技术先端研发机构--日本名古屋工业大学从事氮化镓(GaN)材料和器件研究工作，期间被聘为日本学术振兴会(JSPS)外国人特别研究员。负责组建国内首家GaN功率电子材料与器件研发平台，开展关键技术的研究，同时积极联合国内龙头企业，促进产学研结合，整合产业链条，推动大尺寸Si衬底GaN功率电子材料与器件产业技术的开发。先后承担国家科技部、国家自然基金委、广东省科技计划项目多项。2014年末该研发平台被广东省科技厅认证为广东省第三代半导体GaN电力电子材料与器件工程技术研发中心。

研究领域

主要从事宽禁带III族氮化物（GaN）功率半导体材料与器件研究，包括： GaN器件制备及材料物性研究 GaN功率半导体器件及物理器件制备 GaN功率器件稳定性、可靠性机理研究 GaN功率器件驱动及单片功率集成技术的研究新型GaN电力电子器件在电源管理、光伏逆变、电机驱动等方向的系统集成技术研究

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

L.A. Li, W.J. Wang, L. He, X.R Zhang , Z.S Wu, Yang Liu*，Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device, Journal of Alloys and Compounds ,Vol.728, p400-403, 2017.09 L. He, L.A. Li, Y. Zheng, F. Yang, Z. Shen, Z. J. Chen, W.J. Wang, J. l. Zhang, X. R. Zhang, L. He, Z.S Wu, B.J. Zhang, Yang Liu*, The Influence of Al composition in AlGaN back barrier layer on leakage current and dynamic RON characteristics of AlGaN/GaN HEMTs, Physica Status Solidi A, Vol.214,No.8, p1600824, 2017.08 L.A. Li, W.J. Wang, L. He, J. L. Zhang, Z.S Wu, B.J. Zhang, Yang Liu*, Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application, Materials Science in Semiconductor Processing, Vol.67, p141-146, 2017.08 Z. J. Chen, L.A. Li, Z.Y. He, F. Yang, L. He, Z.S Wu, B.J. Zhang, Yang Liu*, Enhanced voltage blocking ability of AlGaN/GaN HFETs-on-Si by eliminating leakage path introduced by LT-AlN interlayers, Japanese Journal of Applied Physics, Vol.56, No.6,p065503, 2017.06 L. He, F. Yang, L.A. Li, Z. J. Chen, Z. Shen, Y. Zheng, Y. Yao , Y.Q. Ni, D.Q. Zhou, X.R Zhang, L. He, Z.S Wu, B.J. Zhang,Yang Liu*, High Threshold Voltage Uniformity and Low Hysteresis Recessed Gate Al2O3/AlN/GaN MISFET by Selective Area Growth, IEEE Transactions on Electron Devices, VOL. 64, NO. 4, p1554-1560, 2017.04 Z. Shen, L. He, G.L. Zhou, Y. Yao, F. Yang, Y.Q. Ni, Y. Zheng, D.Q. Zhou, J.P. Ao , B.J. Zhang, Yang Liu*, Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors, physica status solidi (a), Vol.213, No.10, pp 2693-8, 2016.10 Y. Zheng, F. Yang, L. He, Y. Yao, Z. Shen, G.L. Zhou, Z.Y. He, Y.Q. Ni, D. Q.Zhou, J. Zhong, X. R. Zhang, L. He, Z. S. Wu, B. J. Zhang, Yang. Liu*, Selective Area Growth: A Promising Way for Recessed Gate GaN MOSFET With High Quality MOS Interface, IEEE Electronic Devices Letters, Vol. 37, No.9, p1193-1196, 2016.09 F. Yang, L. He, Y. Zheng, L.A. Li, Z. J. Chen, D.Q. Zhou, Z.Y. He, Y. Yao, Y.Q. Ni, Z. Shen, X. R. Zhang, L. He, Z.S Wu, B. J. Zhang, Yang Liu* , Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure, Journal of Materials Science: Materials in Electronics, Vol.27, Issue 9, pp 9061–9066, 2016.09 Y.Q. Ni, L. He, D.Q. Zhou, Z.Y. He, Z. J. Chen, Y. Zheng, F. Yang, Z. Shen, X. R. Zhang, L. He, Z.S Wu, B. J. Zhang, Yang Liu*, Low-leakage current and high-breakdown voltage GaN-on-Si(111) System with an AlGaN impurity blocking layer, Journal of Materials Science: Materials in Electronics, Vol.27, Issue 5, pp 5158-5163, 2016.05 D.Q. Zhou, Y.Q. Ni, Z.Y. He, F. Yang, Y. Yao, Z. Shen, J. Zhong, G.L. Zhou, Y. Zheng, L. He, Z.S Wu, B. J. Zhang, Yang Liu*, Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis, physica status solidi (c), Vol. 13, No.5-6, p.345-349, 2016.05 L.A. Li, X.Z. Wang, Yang Liu*, J.P. Ao*, NiO/GaN heterojunction diode deposited through magnetron reactive sputtering, Journal of Vacuum Science& Technology A, Vol. 34, Issue 2, p02D104, 2016.03 L.A. Li, J.Q. Zhang, Yang Liu*, and J.P. Ao*, Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature, Chinese Physics B, Vol. 25, No.3, p038503, 2016.03 Y.Q. Ni, D.Q. Zhou, Z. J. Chen, Y. Zheng, Z.Y. He, F. Yang, Y. Yao, G.L. Zhou, Z. Shen, J. Zhong, Z.S Wu, B. J. Zhang, Yang Liu*, Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate, Semiconductor Science and Technology, Vol.30, p105037 (9p), 2015.09 F. Yang, Y. Yao, Z.Y. He, G.L. Zhou, Y. Zheng, L. He, J.C. Zhang, Y.Q. Ni, D.Q. Zhou, Z. Shen, J. Zhong, Z.S Wu, B. J. Zhang, Yang Liu*, The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET, Journal of Materials Science: Materials in Electronics, Vol.26, Issue 12, p9753-9758, 2015.09 J. Zhong, Y. Yao, Y. Zheng, F. Yang, Y.Q. Ni, Z.Y. He, Z. Shen, G.L. Zhou, D.Q. Zhou, Z.S Wu, B. J. Zhang, Liu Yang*, Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode, Chinese Physics B, Vol. 24, No. 9, p097303, 2015.09 Y. Jiang, Q.P. Wang, F.Z. Zhang, L.A. Li, D.Q. Zhou, Yang Liu, Dejun Wang, Jin-Ping Ao*, Reduction of leakage current by O2plasma treatment for deviceisolation of AlGaN/GaN heterojunction field-effect transistors, Applied Surface Science,Vol.351, p1155–1160,2015.06 Y.Q. Ni, Z.Y. He, Y. Yao, F. Yang, D.Q. Zhou, G.L. Zhou, Z. Shen, J. Zhong n, Y. Zheng, B. J. Zhang, Liu Yang*, Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate, Chinese Physics B, Vol. 24, No. 5, p057303 , 2015.05 Y.Q. Ni, Z.Y. He, D.Q. Zhou, Y. Yao, F. Yang, G.L. Zhou, Z. Shen, J. Zhong, Y. Zheng, B. J. Zhang, Yang Liu*, The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si(111) template, Superlattices and Microstructures, Vol.83, p811–818 , 2015.03 Y. Yao, J. Zhong, Y. Zheng, F. Yang, Y.Q. Ni, Z.Y. He, Z. Shen, G.L. Zhou, S. Wang, J.C. Zhang, J. Li, D.Q. Zhou, Z.S Wu, B. J. Zhang, Yang Liu*, Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode, Japanese Journal of Applied Physics, Vol. 54, p011001 ,2015.01 Y.Q. Ni, Z.Y. He, F. Yang, D.Q. Zhou, Y. Yao, G.L. Zhou, Z. Shen, J. Zhong, Y. Zheng, Z.S Wu, B. J. Zhang, Yang Liu*, Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system, Japanese Journal of Applied Physics, Vol. 54, p015505 ,2015.01