张兴 - 北京大学 - 软件与微电子学院

个人简介

1999- 北京大学，教授 1996.09-1999.08 北京大学，副教授 1996.01-1996.08 香港科技大学，访问学者 1995.06-1995.12 北京大学，讲师 1993.06-1995.05 北京大学，博士后 1989.04-1993.04 陕西微电子研究所，获博士学位 1986.09-1989.04 陕西微电子研究所，获硕士学位 1982.09-1986.07 南京大学物理系，获学士学位

研究领域

新结构器件、纳米级MOS器件 CMOS集成电路设计及加工工艺嵌入式系统设计

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1. Hai Jiang, Xiaoyan Liu, Nuo Xu, Yandong He, Gang Du, and Xing Zhang, Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs, IEEE Electron Device Letters, 36(12):1258-1260, 2015. 2. Hai Jiang, Nuo Xu, Bing Chen, Lang Zeng, Yandong He, Gang Du, Xiaoyan Liu, Xing Zhang, Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs, Semiconductor Science and Technology, 29(11):115021-1-7, 2014. 3. Fei Tan, Ru Huang, Xia An, Yimao Cai, Yue Pan, Weikang Wu, Hui Feng, Xing Zhang, and YangYuan Wang, Investigation on the Response of TaOx-based Resistive Random-Access Memories to Heavy-Ion Irradiation, IEEE Transactions on Nuclear Science, 60(6):4520-4525, 2013. 4. Zhiqiang Li ; Xia An ; Quanxin Yun ; Meng Lin ; Min Li ; Ming Li ; Xing Zhang ; Ru Huang, Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique, IEEE Electron Device Letters, 34(9):1097-1099, 2013. 5. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, Ru Huang, Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation, IEEE Electron Device Letters, 34(5):596-598, 2013. 6. Wenliang Bai, Ru Huang, Yimao Cai, Yu Tang, Xing Zhang, Yangyuan Wang, Record Low-Power Organic RRAM With Sub-20-nA Reset Current, IEEE Electron Device Letters, 34(2):223-225, 2013. 7. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, Ru Huang, Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique, IEEE Electron Device Letters, 33(12):1687-1689, 2012. 8. Xingye Zhou, Feng Liu, Lining Zhang, Cheng Wang, Jin He, Xing Zhang, Mansun Chan, Unified Scale Length for Four-Terminal Double-Gate MOSFETs, IEEE Transactions on Electron Devices, 59(7):1997-1999, 2012. 9. Yue Guo, Xia An, Runsheng Wang, Xing Zhang, Ru Huang, Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology, IEEE Electron Device Letters, 32(4)554-556, APRIL 2011. 10. Shoubin Xue, Pengfei Wang, Ru Huang, Xing Zhang, Investigation of the off-State Behavior in Deep-Submicrometer NMOSFETs Under Heavy-Ion Irradiation by 3-D Simulation,  IEEE Transactions on Device and Materials Reliability,  11(1):13-18, 2011.

学术兼职

社会服务国家自然科学基金委杰出青年基金获得者 973项目首席科学家中国电子学会半导体与集成技术分会副主任中国计算机学会微机专业委员会主任科学通报、半导体学报、北京大学学报(自然科学版)等期刊的编委