Thin-film transistors (TFTs) with high electrical performances (mobility > 10 cm²/V s, V_th < 1 V, SS < 1 V/decade, on/off ratio ≈ 10⁶) obtained from the silicon- and oxide-based single-crystalline semiconductor materials require high processing temperature and hence are not suitable for flexible electronics. Amorphous oxide-based transparent electronic devices are attractive to meet emerging technological demands where crystalline oxide-/silicon-based architectures cannot provide a solution. Here, we tackle this problem by using a novel amorphous oxide semiconducting material—namely, indium tungsten oxide (IWO)—as the active channel in flexible TFTs (FTFTs). Post-annealing temperature as low as 270 °C for amorphous IWO thin films deposited by radio frequency sputtering at room temperature could result in smooth morphology (R_rms ≈ 0.42 nm), good adhesion, and high carrier density (n ≈ 7.19 × 10¹⁸ cm^–3). Excellent TFT characteristics of flexible devices could be achieved with linear field effect mobility μ_FE ≈ 25.86 cm²/V s, subthreshold swing SS ≈ 0.30 V/decade, threshold voltage V_th ≈ −1.5 V, and on/off ratio I_on/I_off ≈ 5.6 × 10⁵ at 3 V and stable operation during bending of the FTFT. Additionally, IWO TFTs were implemented as synapses, the building block for neuromorphic computing. Paired-pulse facilitation up to 138% was observed and showed an exponential decay resembling chemical synapses. Utilizing this characteristic, a high-pass dynamic temporal filter was devised providing increased gain from 1.55 to 21 when frequency was raised from 22 to 62 Hz. The high performance and stability of flexible TFTs obtained with IWO films demonstrate their promise for low-voltage electronic applications.

中文翻译：

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用于柔性高性能晶体管和神经形态电子学的氧化铟钨薄膜

具有高电性能的薄膜晶体管（TFT）（迁移率> 10 cm ² / V s，V _th <1 V，SS <1 V /十倍，开/关比≈10 ⁶由基于硅和氧化物的单晶半导体材料获得的）需要较高的处理温度，因此不适合用于柔性电子产品。基于非晶氧化物的透明电子设备很有吸引力，可以满足基于晶体氧化物/硅的架构无法提供解决方案的新兴技术需求。在这里，我们通过使用新型非晶氧化物半导体材料-氧化铟钨（IWO）-作为柔性TFT（FTFT）中的有源沟道来解决此问题。后退火温度低到270℃用于通过无线电频率沉积的无定形IWO薄膜在室温下溅射可能导致平滑的形态（ř_有效值≈0.42纳米），良好的粘合性，和高的载流子密度（Ñ ≈7.19×10¹⁸厘米^–3）。的柔性器件优异的TFT特性可以与线性的场效应迁移率μ来实现_FE ≈25.86厘米² / V S，亚阈值摆幅SS≈0.30 V /十年中，阈值电压V_个≈-1.5 V，和开/关比我_上/我_掉了≈5.6×10 ⁵FTFT弯曲时在3 V电压下稳定工作。此外，IWO TFT被实现为突触，这是神经形态计算的基础。观察到高达138％的成对脉冲促进，并显示出类似于化学突触的指数衰减。利用此特性，设计了一种高通动态时间滤波器，当频率从22 Hz升高到62 Hz时，增益从1.55增加到21。用IWO薄膜获得的柔性TFT的高性能和稳定性证明了它们在低压电子应用中的前景。