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p-GaN/n-ZnO Nanorod/CsPbBr3 Quantum Dots Decorated with ZnO Nanoseeds for Light-Emitting Diodes
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2019-12-02 , DOI: 10.1021/acsanm.9b01744 Hongxiang Zhang 1, 2 , Chunxia Wu 1, 2 , Canran Zhang 2 , Bisheng Yan 1 , Jiyuan Guo 2 , Gangyi Zhu 3 , Jun Dai 2
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2019-12-02 , DOI: 10.1021/acsanm.9b01744 Hongxiang Zhang 1, 2 , Chunxia Wu 1, 2 , Canran Zhang 2 , Bisheng Yan 1 , Jiyuan Guo 2 , Gangyi Zhu 3 , Jun Dai 2
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In this paper, we report the dual-wavelength green-light emission from zinc oxide (ZnO)-nanoseed-decorated p-GaN (gallium nitride)/n-ZnO nanorod/CsPbBr3 quantum dots (QDs) light-emitting diodes (LEDs). At the same time, the effect of ZnO nanoseeds on the p-GaN/n-ZnO nanorod/CsPbBr3 QDs LED performance is deeply studied. ZnO nanoseeds were fabricated by magnetron sputtering and the sol–gel method; then ZnO nanorods were obtained on GaN by hydrothermal treatment to form the p-GaN/n-ZnO nanorod heterojunction, and green CsPbBr3 QDs were further deposited on ZnO nanorod arrays to realize LEDs. The results show that magnetron-sputtering ZnO nanoseeds can induce regular vertical ZnO nanorod arrays, and the corresponding device presents a better electroluminescence (EL) performance. The X-ray diffraction, atomic force microscopy, and EL mechanisms indicate that the p-GaN/n-ZnO nanorod with magnetron-sputtering ZnO nanoseeds has a better crystalline interface. Our results indicate that the p-GaN/n-ZnO nanorod/CsPbBr3 QDs heterojunction structure can be served as dual-wavelength LEDs, and magnetron-sputtering ZnO nanoseeds can give rise to a better EL performance.
中文翻译：
用ZnO纳米种子装饰的p-GaN / n-ZnO纳米棒/ CsPbBr 3量子点用于发光二极管
在本文中，我们报告了氧化锌（ZnO）修饰的p-GaN（氮化镓）/ n-ZnO纳米棒/ CsPbBr 3量子点（QDs）发光二极管（LED）的双波长绿光发射）。同时，深入研究了ZnO纳米种子对p-GaN / n-ZnO纳米棒/ CsPbBr 3 QDs LED性能的影响。ZnO纳米种子是通过磁控溅射和溶胶-凝胶法制备的。然后通过水热处理在GaN上获得ZnO纳米棒，形成p-GaN / n-ZnO纳米棒异质结和绿色CsPbBr 3QD进一步沉积在ZnO纳米棒阵列上以实现LED。结果表明，磁控溅射ZnO纳米种子可以诱导规则的垂直ZnO纳米棒阵列，并且相应的器件具有更好的电致发光（EL）性能。X射线衍射，原子力显微镜和EL机理表明，具有磁控溅射ZnO纳米种子的p-GaN / n-ZnO纳米棒具有更好的晶体界面。我们的结果表明，p-GaN / n-ZnO纳米棒/ CsPbBr 3 QDs异质结结构可以用作双波长LED，磁控溅射ZnO纳米种子可以提高EL性能。
更新日期：2019-12-02
中文翻译：
用ZnO纳米种子装饰的p-GaN / n-ZnO纳米棒/ CsPbBr 3量子点用于发光二极管
在本文中，我们报告了氧化锌（ZnO）修饰的p-GaN（氮化镓）/ n-ZnO纳米棒/ CsPbBr 3量子点（QDs）发光二极管（LED）的双波长绿光发射）。同时，深入研究了ZnO纳米种子对p-GaN / n-ZnO纳米棒/ CsPbBr 3 QDs LED性能的影响。ZnO纳米种子是通过磁控溅射和溶胶-凝胶法制备的。然后通过水热处理在GaN上获得ZnO纳米棒，形成p-GaN / n-ZnO纳米棒异质结和绿色CsPbBr 3QD进一步沉积在ZnO纳米棒阵列上以实现LED。结果表明，磁控溅射ZnO纳米种子可以诱导规则的垂直ZnO纳米棒阵列，并且相应的器件具有更好的电致发光（EL）性能。X射线衍射，原子力显微镜和EL机理表明，具有磁控溅射ZnO纳米种子的p-GaN / n-ZnO纳米棒具有更好的晶体界面。我们的结果表明，p-GaN / n-ZnO纳米棒/ CsPbBr 3 QDs异质结结构可以用作双波长LED，磁控溅射ZnO纳米种子可以提高EL性能。
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