High Insulation Resistivity and Ultralow Dielectric Loss in La-Doped SrTiO3 Colossal Permittivity Ceramics through Defect Chemistry Optimization,ACS Sustainable Chemistry & Engineering

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High Insulation Resistivity and Ultralow Dielectric Loss in La-Doped SrTiO3 Colossal Permittivity Ceramics through Defect Chemistry Optimization
ACS Sustainable Chemistry & Engineering ( IF 7.1 ) Pub Date : 2019-07-07 00:00:00 , DOI: 10.1021/acssuschemeng.9b02143
Xu Guo ₁ , Yongping Pu ₁ , Wen Wang ₁ , Lei Zhang ₁ , Jiamin Ji ₁ , Ruike Shi ₁ , Yu Shi ₁ , Mengdie Yang ₁ , Jingwei Li ₁

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High performance La_xSr_1–xTiO₃ (0.000 ≤ x ≤ 0.018) ceramics were prepared by a traditional solid-state method and sintered in nitrogen atmosphere. The phase structure and micromorphology of the ceramic samples were studied by the analysis of XRD and SEM, respectively. A small amount of La ion doping promoted the growth of ceramic grains, and no second phase was found. Meanwhile, the La_0.010Sr_0.990TiO₃ ceramic sample showed a colossal permittivity of 26 897 and a dielectric loss of 0.005 at 1 kHz, and a colossal permittivity of 26 072 and a dielectric loss of 0.031 at 1 MHz, with high insulation resistivity (3.10 × 10⁹ Ω·cm, DC 100 V) and good stability of frequency (20 Hz to 2 × 10⁶ Hz) and temperature (25–300 °C). Then the mechanism of obtaining excellent dielectric properties was investigated via treatment with different atmospheres and XPS and impedance analysis. As a result, colossal permittivity and ultralow dielectric loss were attributed to the Ti_Ti^′–V_O^··–Ti_Ti^′ defect dipoles and V_O^··–3Ti_Ti^′–La_Sr^· defect dipole clusters. In addition, the main reason for the high DC resistivity of the ceramic samples was the insulation grain boundaries with high resistance. Consequently, colossal permittivity, low dielectric loss, high insulation resistivity, and good stabilities of frequency and temperature of the ceramic samples were obtained at the same time.

中文翻译：

La掺杂SrTiO ₃介电常数陶瓷的高绝缘电阻和超低介电损耗，通过缺陷化学优化

高性能的La _X高级_{1- X}的TiO ₃（0.000≤ X ≤0.018）由传统的固态方法制备并在氮气气氛中烧结陶瓷。分别通过XRD和SEM分析研究了陶瓷样品的相结构和微观形貌。少量的La离子掺杂促进了陶瓷晶粒的生长，并且没有发现第二相。同时，La _0.010 Sr _0.990 TiO ₃陶瓷样品在1 kHz时表现出26 897的介电常数和0.005的介电损耗，在1 MHz时表现出26 072的介电常数和0.031的介电损耗，具有高绝缘电阻率（ 3.10×10 ⁹Ω·cm，DC 100 V）和良好的频率（20 Hz至2×10 ⁶ Hz）和温度（25–300°C）稳定性。然后，通过在不同的气氛，XPS处理和阻抗分析中研究了获得优异介电性能的机理。其结果是，巨大的介电常数和超低介电损耗归因于在Ti_的Ti^' -V _ö^·· -Ti_钛^'缺陷偶极子和V _ö^·· -3Ti_钛^' -La_锶^·缺陷偶极簇。另外，陶瓷样品的高DC电阻率的主要原因是具有高电阻的绝缘晶界。结果，同时获得了陶瓷介电常数，低介电损耗，高绝缘电阻率以及良好的频率和温度稳定性。

更新日期：2019-07-07

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