Growth of Ultraflat PbI2 Nanoflakes by Solvent Evaporation Suppression for High-Performance UV Photodetectors.,Small

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Growth of Ultraflat PbI2 Nanoflakes by Solvent Evaporation Suppression for High-Performance UV Photodetectors.
Small ( IF 13.0 ) Pub Date : 2019-06-25 , DOI: 10.1002/smll.201901767
Han Xiao ₁ , Tao Liang _{1,

2} , Mingsheng Xu _{1,

3}

Affiliation

2D lead iodide (PbI2 ) is attracting great interest due to its great potential in the application of UV photodetectors. In this work, a facile solution-based method is developed to synthesize ultraflat PbI2 nanoflakes for high-performance UV photodetectors. By maintaining at proximate room temperature and adding an evaporation suppression solvent for slow-rate crystal growth, high-quality PbI2 nanoflakes with an ultraflat surface are obtained. The UV photodetectors based on 2D PbI2 nanoflakes exhibit a high photoresponsivity of 0.51 A W-1 , a high detectivity of 4.0 × 1010 Jones, a high external quantum efficiency (EQE) of 168.9%, and a rapid response speed including a rise time of 14.1 ms and a decay time of 31.0 ms. The balanced and excellent photodetector performance of these devices paves the road for practical UV photodetection based on 2D PbI2 nanoflakes.

中文翻译：

高性能紫外光电探测器通过溶剂蒸发抑制法生长超扁平PbI2纳米薄片。

2D碘化铅（PbI2）由于其在紫外线光电探测器中的巨大潜力而引起了人们的极大兴趣。在这项工作中，开发了一种基于溶液的简便方法来合成用于高性能UV光电探测器的超扁平PbI2纳米薄片。通过保持在接近室温的温度下并添加用于抑制晶体缓慢生长的蒸发抑制溶剂，可以获得具有超平整表面的高质量PbI2纳米薄片。基于2D PbI2纳米薄片的UV光电探测器显示出0.51 A W-1的高光响应性，4.0×1010 Jones的高检测率，168.9％的高外部量子效率（EQE），以及包括上升时间在内的快速响应速度。 14.1 ms和31.0 ms的衰减时间。

更新日期：2019-06-25

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