This paper reports the fabrication of indium gallium tin oxide (IGTO) thin-film transistors (TFTs) with ultraviolet (UV)-treated PVP-co-PMMA-based hybrid gate insulators at an extremely low temperature (≤150 °C). Synergetic hafnia loading and UV treatment were used to tailor the mechanical softness and hydroxyl fraction in the polymer dielectric film. The UV-treated hybrid dielectric film had a low hydroxyl concentration, a smoother surface, and a denser packing nature, which can be explained by the high ionicity of hafnium oxide and photon-assisted improvement in the cohesion between organic and inorganic materials. Suitability of the UV-treated hybrid dielectric film as a gate insulator was evaluated by fabricating bottom gate TFTs with sputtered IGTO films as a channel layer, which showed high carrier mobility at a low temperature. The resulting IGTO TFTs with a UV-treated hybrid gate insulator exhibited a remarkable high field-effect mobility of 25.9 cm²/(V s), a threshold voltage of −0.2 V, a subthreshold gate swing of 0.4 V/decade, and an I_ON/OFF ratio of >10⁷ even at a low annealing temperature of 150 °C. The fabricated IGTO TFTs with the UV-treated hybrid dielectric film on the plastic substrate were shown to withstand the 100 times mechanical bending stress even under an extremely small curvature radius of 1 mm due to the intrinsic stretchability of the hybrid dielectric film.

中文翻译：

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低温紫外掺杂氧化Ha用于高性能铟镓锡氧化物晶体管的可拉伸聚合物栅极电介质

本文报道了用紫外线（UV）处理的PVP- co制备铟镓锡氧化物（IGTO）薄膜晶体管（TFT）的过程-基于PMMA的混合栅绝缘子，温度极低（≤150°C）。协同氧化ha负载和紫外线处理用于调整聚合物介电膜的机械柔软度和羟基含量。经紫外线处理的混合介电膜具有较低的羟基浓度，较光滑的表面和更紧密的堆积特性，这可以用氧化ha的高离子化度以及光子辅助的有机和无机材料之间的内聚力改善来解释。通过用溅射IGTO膜作为沟道层制造底栅TFT来评估经UV处理的混合介电膜作为栅绝缘体的适用性，该TFT在低温下显示出高的载流子迁移率。所得的具有紫外线处理过的混合栅绝缘体的IGTO TFT表现出25.9 cm的显着高场效应迁移率² /（V s），阈值电压为-0.2 V，亚阈值栅极摆幅为0.4 V /十倍，即使在150°C的低退火温度下，I _{ON / OFF}比率也> 10 ⁷。由于混合电介质膜的固有拉伸性，即使在1mm的极小曲率半径下，在塑料基板上具有经过紫外线处理的混合电介质膜的已制成的IGTO TFT仍能承受100倍的机械弯曲应力。