High‐performance resistance switching (ON/OFF ratio ≈10⁴) is achieved based on single Ag₂S nanowire transistors with symmetrical drain–source electrodes (see image). A semiconductor–metal transition is observed by measuring the temperature dependence of the resistance when the device is switched from the OFF to the ON state. Gate‐voltage‐controlled switching is also demonstrated.

中文翻译：

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Ag2S纳米线晶体管中的电阻切换和金属丝形成

基于具有对称漏极-源极电极的单个Ag ₂ S纳米线晶体管，可以实现高性能的电阻切换（开/关比≈10 ⁴）（参见图像）。当器件从关状态切换到开状态时，通过测量电阻的温度依赖性可以观察到半导体-金属的转变。还演示了栅极电压控制的开关。