Creating New VLS Silicon Nanowire Contact Geometries by Controlling Catalyst Migration,Nano Letters

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Creating New VLS Silicon Nanowire Contact Geometries by Controlling Catalyst Migration
Nano Letters ( IF 9.6 ) Pub Date : 2015-09-22 00:00:00 , DOI: 10.1021/acs.nanolett.5b02178
Sardar B. Alam ₁ , Federico Panciera _{2,

3} , Ole Hansen _{1,

4} , Kristian Mølhave ₁ , Frances M. Ross ₃

Affiliation

The formation of self-assembled contacts between vapor–liquid–solid grown silicon nanowires and flat silicon surfaces was imaged in situ using electron microscopy. By measuring the structural evolution of the contact formation process, we demonstrate how different contact geometries are created by adjusting the balance between silicon deposition and Au migration. We show that electromigration provides an efficient way of controlling the contact. The results point to novel device geometries achieved by direct nanowire growth on devices.

中文翻译：

通过控制催化剂迁移来创建新的VLS硅纳米线接触几何

使用电子显微镜对在汽-液-固生长的硅纳米线和平坦的硅表面之间形成的自组装接触进行了成像。通过测量接触形成过程的结构演变，我们证明了如何通过调整硅沉积和Au迁移之间的平衡来创建不同的接触几何形状。我们表明，电迁移提供了一种控制接触的有效方法。结果表明，通过在器件上直接进行纳米线生长可以实现新颖的器件几何形状。

更新日期：2015-09-22

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