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Efficient and High-Color-Purity Light-Emitting Diodes Based on In Situ Grown Films of CsPbX3 (X = Br, I) Nanoplates with Controlled Thicknesses
ACS Nano ( IF 15.8 ) Pub Date : 2017-10-24 00:00:00 , DOI: 10.1021/acsnano.7b05191 Junjie Si , Yang Liu , Zhuofei He , Hui Du , Kai Du , Dong Chen , Jing Li , Mengmeng Xu 1 , He Tian , Haiping He , Dawei Di 2 , Changqing Lin 1 , Yingchun Cheng 1 , Jianpu Wang 1 , Yizheng Jin
ACS Nano ( IF 15.8 ) Pub Date : 2017-10-24 00:00:00 , DOI: 10.1021/acsnano.7b05191 Junjie Si , Yang Liu , Zhuofei He , Hui Du , Kai Du , Dong Chen , Jing Li , Mengmeng Xu 1 , He Tian , Haiping He , Dawei Di 2 , Changqing Lin 1 , Yingchun Cheng 1 , Jianpu Wang 1 , Yizheng Jin
Affiliation
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We report a facile solution-based approach to the in situ growth of perovskite films consisting of monolayers of CsPbBr3 nanoplates passivated by bulky phenylbutylammonium (PBA) cations, that is, two-dimensional layered PBA2(CsPbBr3)n−1PbBr4 perovskites. Optimizing film formation processes leads to layered perovskites with controlled n values in the range of 12–16. The layered perovskite emitters show quantum-confined band gap energies with a narrow distribution, suggesting the formation of thickness-controlled quantum-well (TCQW) structures. The TCQW CsPbBr3 films exhibit smooth surface features, narrow emission line widths, low trap densities, and high room-temperature photoluminance quantum yields, resulting in high-color-purity green light-emitting diodes (LEDs) with remarkably high external quantum efficiencies (EQEs) of up to 10.4%. The solution-based approach is extended to the preparation of TCQW CsPbI3 films for high-color-purity red perovskite LEDs with high EQEs of up to 7.3%.
中文翻译：
基于具有受控厚度的CsPbX 3（X = Br，I）纳米板的原位生长膜的高效且高色纯度的发光二极管
我们报告了一种基于溶液的原位生长钙钛矿薄膜的简便方法，该钙钛矿薄膜由单层的CsPbBr 3纳米板组成，该单层被庞大的苯基丁基铵（PBA）阳离子钝化，即二维分层PBA 2（CsPbBr 3）n -1 PbBr 4钙钛矿。优化成膜过程会导致钙钛矿的层状结构，其n值控制在12–16范围内。层状钙钛矿发射体显示出具有窄分布的量子限制带隙能量，表明形成了厚度可控的量子阱（TCQW）结构。TCQW CsPbBr 3薄膜具有光滑的表面特征，窄的发射线宽度，低的陷阱密度和较高的室温光致发光量子产率，从而导致高色纯度的绿色发光二极管（LED）具有显着高的外部量子效率（EQE）。至10.4％。基于解决方案的方法扩展到了TCQW CsPbI 3膜的制备，该膜用于具有高达7.3％的高EQE的高色纯度的红色钙钛矿LED。
更新日期：2017-10-25
中文翻译：
基于具有受控厚度的CsPbX 3（X = Br，I）纳米板的原位生长膜的高效且高色纯度的发光二极管
我们报告了一种基于溶液的原位生长钙钛矿薄膜的简便方法，该钙钛矿薄膜由单层的CsPbBr 3纳米板组成，该单层被庞大的苯基丁基铵（PBA）阳离子钝化，即二维分层PBA 2（CsPbBr 3）n -1 PbBr 4钙钛矿。优化成膜过程会导致钙钛矿的层状结构，其n值控制在12–16范围内。层状钙钛矿发射体显示出具有窄分布的量子限制带隙能量，表明形成了厚度可控的量子阱（TCQW）结构。TCQW CsPbBr 3薄膜具有光滑的表面特征，窄的发射线宽度，低的陷阱密度和较高的室温光致发光量子产率，从而导致高色纯度的绿色发光二极管（LED）具有显着高的外部量子效率（EQE）。至10.4％。基于解决方案的方法扩展到了TCQW CsPbI 3膜的制备，该膜用于具有高达7.3％的高EQE的高色纯度的红色钙钛矿LED。
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