Abstract

VO₂ thin films were grown on silicon substrates using Al₂O₃ thin films as the buffer layers. Compared with direct deposition on silicon, VO₂ thin films deposited on Al₂O₃ buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO₂ thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al₂O₃/VO₂/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO₂ thin films can be induced by an electrical field.

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中文翻译：

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铝的影响2个Ø3 缓冲层对溅射VO性能的影响2个 薄膜

摘要

使用Al ₂ O ₃薄膜作为缓冲层，在硅衬底上生长VO ₂薄膜。与直接沉积在硅上相比，沉积在Al ₂ O ₃缓冲层上的VO ₂薄膜的微观结构和物理性能有了显着改善。通过优化生长条件，VO ₂薄膜的电阻可以改变四个数量级，同时在相变温度下的热滞回落降低为4°C。在Pt / Si / Al ₂ O ₃ / VO _2中测量了电驱动的相变/ Au异质结构。缓冲层的引入减少了电驱动相变期间的泄漏电流和焦耳热。所述Ç - V测量结果表明，VO的相变₂薄膜可以通过电场来诱导。

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