Magnetic Memory: Magnetic Nanoplatelet‐Based Spin Memory Device Operating at Ambient Temperatures (Adv. Mater. 17/2017),Advanced Materials

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Magnetic Memory: Magnetic Nanoplatelet‐Based Spin Memory Device Operating at Ambient Temperatures (Adv. Mater. 17/2017)
Advanced Materials ( IF 27.4 ) Pub Date : 2017-05-02 , DOI: 10.1002/adma.201770118
Guy Koplovitz _{1,

2,

3} , Darinka Primc _{4,

5} , Oren Ben Dor _{1,

2} , Shira Yochelis _{1,

2} , Dvir Rotem _{2,

3} , Danny Porath _{2,

3} , Yossi Paltiel _{1,

2}

Affiliation

In article number 1606748, Yossi Paltiel and co‐workers use 30–50 nm ferromagnetic nanoplatelets (FMNPs) on top of an organic chiral molecule monolayer to demonstrate nano‐based magnetless magnetic memory device at ambient temperatures. The memory is based on the chiral induced spin selectivity effect. This technology could make it possible to create inexpensive, high‐density universal memory devices with much lower power consumption than existing technologies.

中文翻译：

磁存储器：在环境温度下运行的基于磁性纳米板的自旋存储设备（Adv。Mater。17/2017）

在1606748号文章中，Yossi Paltiel及其同事在有机手性分子单分子层的顶部使用了30–50 nm的铁磁纳米片（FMNP），以演示在室温下基于纳米的无磁磁性存储设备。记忆是基于手性诱导的自旋选择性效应。与现有技术相比，该技术可以创建价格低得多的廉价，高密度通用存储设备。

更新日期：2017-05-02

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