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Direct observation of spin-layer locking by local Rashba effect in monolayer semiconducting PtSe2 film.
Nature Communications ( IF 14.7 ) Pub Date : 2017-01-31 , DOI: 10.1038/ncomms14216
Wei Yao 1 , Eryin Wang 1 , Huaqing Huang 1 , Ke Deng 1 , Mingzhe Yan 1 , Kenan Zhang 1 , Koji Miyamoto 2 , Taichi Okuda 2 , Linfei Li 3 , Yeliang Wang 3, 4 , Hongjun Gao 3, 4 , Chaoxing Liu 5 , Wenhui Duan 1, 4 , Shuyun Zhou 1, 4
Affiliation  

The generally accepted view that spin polarization in non-magnetic solids is induced by the asymmetry of the global crystal space group has limited the search for spintronics materials mainly to non-centrosymmetric materials. In recent times it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries and therefore centrosymmetric materials may exhibit previously overlooked spin polarizations. Here, by using spin- and angle-resolved photoemission spectroscopy, we report the observation of helical spin texture in monolayer, centrosymmetric and semiconducting PtSe2 film without the characteristic spin splitting in conventional Rashba effect (R-1). First-principles calculations and effective analytical model analysis suggest local dipole induced Rashba effect (R-2) with spin-layer locking: opposite spins are degenerate in energy, while spatially separated in the top and bottom Se layers. These results not only enrich our understanding of the spin polarization physics but also may find applications in electrically tunable spintronics.

中文翻译:


通过单层半导体 PtSe2 薄膜中的局部 Rashba 效应直接观察自旋层锁定。



人们普遍接受的观点是,非磁性固体中的自旋极化是由整体晶体空间群的不对称性引起的,这限制了对自旋电子学材料的研究主要集中在非中心对称材料。近年来,有人提出自旋极化根本上源于局部原子位点不对称,因此中心对称材料可能表现出以前被忽视的自旋极化。在这里,通过使用自旋和角分辨光电子能谱,我们报告了在单层、中心对称和半导体 PtSe 2薄膜中观察到螺旋自旋织构,而没有传统 Rashba 效应中的特征自旋分裂 (R-1)。第一原理计算和有效的分析模型分析表明,局域偶极子诱导的 Rashba 效应 (R-2) 具有自旋层锁定:相反的自旋在能量上简并,而在顶部和底部 Se 层中空间分离。这些结果不仅丰富了我们对自旋极化物理的理解,而且还可能在电可调谐自旋电子学中找到应用。
更新日期:2017-02-01
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