Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS2,Advanced Materials

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Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS2
Advanced Materials ( IF 27.4 ) Pub Date : 2016-12-14 , DOI: 10.1002/adma.201603550
Ying Chen ₁ , Lin Gan ₁ , Huiqiao Li ₁ , Ying Ma ₁ , Tianyou Zhai ₁

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A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large‐size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS₂ film up to 1 cm². The novel strategy is also verified for the synthesis of WSe₂ and MoS₂ uniform films, suggesting universality for TMD film fabrication.

中文翻译：

通过硅化处理在硅晶片上获得均匀的单层过渡金属双硫属化物膜：WS2的典型研究

进行硅烷化反应可改善前驱物在硅片上的分散性，以进行大尺寸均匀过渡金属二卤化硅（TMD）膜合成，并获得高度结晶的单层WS ₂膜，最大厚度为1 cm ²。还验证了该新颖策略可用于合成WSe ₂和MoS ₂均匀膜，表明TMD膜制造的普遍性。

更新日期：2016-12-14

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