The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin–orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS₂ or WSe₂)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.

中文翻译：

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单层过渡金属双硫属化物/铁磁体双层中的强Rashba-Edelstein效应诱导自旋轨道扭矩。

二维材料的电子和光电性能已在石墨烯和层状过渡金属二卤化碳（TMDs）中得到了广泛的探索。这些二维材料中的自旋电子学可以为未来的电子学提供新的机会，例如，有效产生自旋电流，这应该能够有效地操纵磁性元件。到目前为止，仍缺乏对与二维材料相邻的磁性层上的充电电流感应的自旋电流和自旋轨道转矩（SOT）的定量测​​定。在这里，我们报告了由单层TMD（MoS ₂或WSe ₂）/ CoFeB双层。对应于SOT的有效自旋电导率几乎与温度无关。我们的研究结果表明，化学气相沉积生长的大型单层TMD中的电荷自旋转换可能会导致磁化反转的高能效，并为将来基于二维材料的自旋电子学带来便利的器件集成。