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Design Considerations and Fabrication Protocols of High-Performance Intrinsically Stretchable Transistors and Integrated Circuits
ACS Nano ( IF 15.8 ) Pub Date : 2024-11-20 , DOI: 10.1021/acsnano.4c14026 Donglai Zhong, Yuya Nishio, Can Wu, Yuanwen Jiang, Weichen Wang, Yujia Yuan, Yating Yao, Jeffrey B.-H. Tok, Zhenan Bao
ACS Nano ( IF 15.8 ) Pub Date : 2024-11-20 , DOI: 10.1021/acsnano.4c14026 Donglai Zhong, Yuya Nishio, Can Wu, Yuanwen Jiang, Weichen Wang, Yujia Yuan, Yating Yao, Jeffrey B.-H. Tok, Zhenan Bao
Intrinsically stretchable electronics represent a significant advancement in wearable and implantable technologies, as they offer a unique advantage by maintaining intimate tissue contact while accommodating movements and size changes. This capability makes them exceptionally well-suited for applications in human-machine interfaces, wearables, and implantables, where seamless integration with the human body is essential. To realize this vision, it is important to develop soft integrated circuits for on-body signal processing and computing. Our previous work has focused on developing high-density, intrinsically stretchable transistors capable of delivering high drive current, high-speed performance, and facilitating large-scale integrated circuits. These breakthroughs were achieved through a comprehensive and synergistic approach that encompassed material innovation, meticulous fabrication process design, precise device engineering, and strategic circuit design. Here we provide a comprehensive yet detailed description of these protocols, including design principles, material preparation, fabrication processes, and troubleshooting. These protocols are to empower other researchers to reproduce our developed processes, thus fostering further advancements in stretchable electronics. Specifically, we present in this article an enhanced protocol with explanations, complemented by photographs and instructional videos. This resource aims to bridge the knowledge gap and provide invaluable insights for researchers interested in developing high-performance intrinsically stretchable transistors and integrated circuits. We hope this helps to enable future advancements in the field of intrinsically stretchable electronics.
中文翻译:
高性能本征可拉伸晶体管和集成电路的设计考虑和制造协议
本质上可拉伸的电子设备代表了可穿戴和植入技术的重大进步,因为它们通过保持紧密的组织接触,同时适应运动和尺寸变化,提供了独特的优势。这种能力使它们特别适合于人机界面、可穿戴设备和植入式设备等必须与人体无缝集成的应用。为了实现这一愿景,开发用于 Onbody 信号处理和计算的软集成电路非常重要。我们之前的工作重点是开发高密度、本质可拉伸晶体管,这些晶体管能够提供高驱动电流、高速性能,并促进大规模集成电路的发展。这些突破是通过全面的协同方法实现的,其中包括材料创新、细致的制造工艺设计、精确的器件工程和战略电路设计。在这里,我们提供了这些协议的全面而详细的描述,包括设计原则、材料准备、制造过程和故障排除。这些协议旨在使其他研究人员能够复制我们开发的工艺,从而促进可拉伸电子产品的进一步发展。具体来说,我们在本文中提出了一个带有解释的增强方案,并辅以照片和教学视频。该资源旨在弥合知识差距,并为有兴趣开发高性能本质可拉伸晶体管和集成电路的研究人员提供宝贵的见解。我们希望这有助于实现本质可拉伸电子产品领域的未来发展。
更新日期:2024-11-20
中文翻译:
高性能本征可拉伸晶体管和集成电路的设计考虑和制造协议
本质上可拉伸的电子设备代表了可穿戴和植入技术的重大进步,因为它们通过保持紧密的组织接触,同时适应运动和尺寸变化,提供了独特的优势。这种能力使它们特别适合于人机界面、可穿戴设备和植入式设备等必须与人体无缝集成的应用。为了实现这一愿景,开发用于 Onbody 信号处理和计算的软集成电路非常重要。我们之前的工作重点是开发高密度、本质可拉伸晶体管,这些晶体管能够提供高驱动电流、高速性能,并促进大规模集成电路的发展。这些突破是通过全面的协同方法实现的,其中包括材料创新、细致的制造工艺设计、精确的器件工程和战略电路设计。在这里,我们提供了这些协议的全面而详细的描述,包括设计原则、材料准备、制造过程和故障排除。这些协议旨在使其他研究人员能够复制我们开发的工艺,从而促进可拉伸电子产品的进一步发展。具体来说,我们在本文中提出了一个带有解释的增强方案,并辅以照片和教学视频。该资源旨在弥合知识差距,并为有兴趣开发高性能本质可拉伸晶体管和集成电路的研究人员提供宝贵的见解。我们希望这有助于实现本质可拉伸电子产品领域的未来发展。