Measurement of the real strength value of near-field electric fields is of great importance for understanding light–matter interactions in nanophotonics, which is a big challenge in the field. We developed in this study a theory and approaches for directly measuring the real strength of near-field electric fields by scattering type scanning near-field optical microscope (s-SNOM). The validity of the theory and approaches was confirmed by comparing s-SNOM measurement results with the finite element method simulations. Our efforts enable s-SNOM as a quantitative tool in clarifying light–matter interactions in a variety of fields, such as all-optical chips, plasmon-induced catalysis, metamaterials and metasurfaces, enhanced spectroscopy, and van der Waals materials, etc.

中文翻译：

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直接测量近场电场的真实强度


测量近场电场的真实强度值对于理解纳米光子学中的光-物质相互作用非常重要，这是该领域的一个巨大挑战。本研究开发了一种通过散射型扫描近场光学显微镜 （s-SNOM） 直接测量近场电场真实强度的理论和方法。通过将 s-SNOM 测量结果与有限元方法模拟进行比较，证实了理论和方法的有效性。我们的努力使 s-SNOM 成为阐明光-物质相互作用的定量工具，适用于各种领域，例如全光学芯片、等离激元诱导催化、超材料和超表面、增强光谱和范德华材料等。