In this work, we investigate the properties of Cu_xCr_yO_z thin films deposited by atomic layer deposition (ALD) over a wide compositional range. A significant increase in growth rate is observed for intermediate compositions and shown to arise from an enhancement of the CrO_x deposition rate on the CuO_x surface. In addition to the characteristics of the deposition process, we explore the structural and optoelectronic properties of these films for compositions ranging from copper-free chromium oxide to chromium-free copper oxide, and for various post-deposition annealing temperatures (400–800 °C). The resulting composition, optical constants, band gap, valence band maximum and work function are determined and used to draw full band diagrams of the binary and ternary oxides. We report for the first time the experimental work function of the spinel phase CuCr₂O₄ (5.0 ± 0.2 eV). Finally, the contact resistivity of the films with p-type silicon is examined to assess their potential use as hole-selective contacts for crystalline Si solar cells. The lowest contact resistivity (1.72 Ω cm²) was found for as-deposited Cu_0.05Cr_0.30O_0.65.

中文翻译：

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原子层沉积的 CuxCryOz 薄膜：光电特性和作为 c-Si 太阳能电池空穴选择性触点的潜在应用


在这项工作中，我们研究了原子层沉积 （ALD） 在较宽的成分范围内沉积的 Cu_xCr_yO_z 薄膜的性能。观察到中间成分的生长速率显著增加，并表明这是由于 CuO_x 表面上 CrO_x 沉积速率的提高所致。除了沉积工艺的特性外，我们还探讨了这些薄膜的结构和光电特性，适用于从无铜氧化铬到无铬氧化铜的成分，以及各种沉积后退火温度 （400-800 °C）。确定所得成分、光学常数、带隙、价带最大值和功函数，并用于绘制二元和三元氧化物的全能带图。我们首次报道了尖晶石相 CuCr₂O₄ （5.0 ± 0.2 eV） 的实验功函数。最后，检查了与 p 型硅的薄膜的接触电阻率，以评估它们作为晶体硅太阳能电池的空穴选择性触点的潜在用途。沉积态铜_{0.05 Cr 0.30}O_0.65 的接触电阻率最低 （1.72 Ω cm²）。