The difficulty of achieving ohmic contacts is a long‐standing challenge for the development and integration of devices based on 2D materials, due to the large mismatch between their electronic properties and those of both traditional metal‐based and van der Waals (vdWs) electrodes. Research has focused primarily on the electronic energy band alignment, while the effects of momentum mismatch on carrier transport across the vdWs gaps are largely neglected. Graphene‐silicon junctions are utilized to demonstrate that electron momentum distribution can dominate the electronic properties of vdWs contacts. By judiciously introducing scattering centers at the interface that provide additional momentum to compensate the momentum mismatch, the junction conductivity is enhanced by more than three orders of magnitude, enabling the formation of high‐quality ohmic contacts. The study establishes the framework for the design of high‐performance ohmic vdWs contacts based on both energy and momentum matching, which can facilitate efficient heterogeneous integration of 2D–3D systems and the development of post‐CMOS architectures.

中文翻译：

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欧姆范德华接触结构的界面动量匹配


实现欧姆接触的困难是开发和集成基于 2D 材料的器件的长期挑战，因为其电子特性与传统金属和范德华 （vdWs） 电极的电子特性之间存在很大不匹配。研究主要集中在电子能带对齐上，而动量失配对跨越 vdWs 间隙的载流子传输的影响在很大程度上被忽视了。石墨烯-硅结用于证明电子动量分布可以主导 vdWs 触点的电子特性。通过在界面处明智地引入散射中心，提供额外的动量来补偿动量失配，结电导率提高了三个数量级以上，从而能够形成高质量的欧姆接触。该研究建立了基于能量和动量匹配的高性能欧姆 vdWs 触点的设计框架，可以促进 2D-3D 系统的高效异构集成和后 CMOS 架构的开发。