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Ultraflat hexagonal boron nitride for high-κ dielectric integration
Nature Materials ( IF 37.2 ) Pub Date : 2024-10-29 , DOI: 10.1038/s41563-024-02013-9
Hayoung Ko, Seungjin Lee, Ki Kang Kim

An ultraflat, single-crystal hexagonal boron nitride film enables the production of wafer-scale, ultrathin high-κ dielectrics for two-dimensional electronics, meeting the 2025 targets set by the International Roadmap for Devices and Systems.

中文翻译:


超平六方氮化硼,用于高 κ 介电集成



超平、单晶六方氮化硼薄膜能够生产用于二维电子产品的晶圆级超薄高 κ 电介质,满足国际器件和系统路线图设定的 2025 年目标。
更新日期:2024-10-30
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