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Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation
Light: Science & Applications ( IF 20.6 ) Pub Date : 2024-09-27 , DOI: 10.1038/s41377-024-01640-w
Zhen Wang, Chunhua Tan, Meng Peng, Yiye Yu, Fang Zhong, Peng Wang, Ting He, Yang Wang, Zhenhan Zhang, Runzhang Xie, Fang Wang, Shuijin He, Peng Zhou, Weida Hu

Given the surpassing of the Shockley-Quiesser efficiency limit in conventional p-n junction photovoltaic effect, bulk photovoltaic effect (BPVE) has garnered significant research interest. However, the BPVE primarily focuses on a narrow wavelength range, limiting its potential applications. Here we report a giant infrared bulk photovoltaic effect in tellurene (Te) for broad-spectrum neuromodulation. The generated photocurrent in uniformly illuminated Te excludes other photoelectric effects and is attributed to the BPVE. The bulk photovoltaic wavelength in Te spans a wide range from the ultraviolet (390 nm) to the mid-infrared (3.8 µm). Moreover, the photocurrent density of 70.4 A cm−2 under infrared light simulation outperforms that in previous ultraviolet and visible semiconductors as well as infrared semimetals. Te attached to the dendrites or somata of the cortical neurons successfully elicit action potentials under broad-spectrum light irradiation. This work lays the foundation for the further development of infrared BPVE in narrow bandgap materials.



中文翻译:


碲烯中巨大的红外体光伏效应用于广谱神经调节



鉴于传统pn结光伏效应突破了Shockley-Quiesser效率极限,体光伏效应(BPVE)引起了人们的广泛研究兴趣。然而,BPVE 主要关注较窄的波长范围,限制了其潜在应用。在这里,我们报道了碲烯(Te)中巨大的红外体光伏效应,用于广谱神经调节。均匀照射 Te 中产生的光电流排除了其他光电效应,归因于 BPVE。 Te 的体光伏波长涵盖从紫外线 (390 nm) 到中红外线 (3.8 µm) 的广泛范围。此外,红外光模拟下的光电流密度为70.4 A cm -2 ,优于以往的紫外和可见半导体以及红外半金属。 Te附着在皮质神经元的树突或体细胞上,在广谱光照射下成功引发动作电位。该工作为窄带隙材料中红外BPVE的进一步发展奠定了基础。

更新日期:2024-09-27
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