Vanadium Dioxide by Atomic Layer Deposition: A Promising Material for Next-Generation Memory Devices,The Journal of Physical Chemistry Letters

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Vanadium Dioxide by Atomic Layer Deposition: A Promising Material for Next-Generation Memory Devices
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2024-09-18 , DOI: 10.1021/acs.jpclett.4c02192
Thomas Ratier ₁ , Salomé Rigollet ₁ , Paolo Martins ₁ , Patrick Garabedian ₁ , Etienne Eustache ₁ , David Brunel ₁

Affiliation

The synthesis of a vanadium dioxide (VO₂) film using atomic layer deposition (ALD) with vanadium tetrachloride (VCl₄) as a precursor for the realization of programmable memory devices is reported. X-ray diffraction analysis revealed the epitaxial growth of VO₂ on c-Al₂O₃. The phase transition was monitored using resistivity measurements across varying temperatures, demonstrating a decrease of >4 orders of magnitude at the transition temperature, thereby confirming the high quality of the material. From this material, memristive devices are fabricated as resistive random-access memory (RRAM). On the basis of spiking voltage inputs, these RRAM exhibited cycle stability over 512 cycles and state retention stability for >450 s, showing <2% drift. With respect to synaptic-like applications, the RRAM devices were piloted through step patterns to enable multilevel memory states. These ALD-grown VO₂-based devices demonstrate potential for use as synaptic connections with multiweight synapses, advancing scalability in neuromorphic applications.

中文翻译：

原子层沉积二氧化钒：下一代存储器件的有前途的材料

据报道，使用原子层沉积（ALD）以四氯化钒（VCl ₄ ）作为前体合成二氧化钒（VO ₂ ）薄膜，用于实现可编程存储器件。 X射线衍射分析表明VO ₂在c-Al ₂ O ₃上外延生长。使用不同温度下的电阻率测量来监测相变，证明在相变温度下电阻率降低了 >4 个数量级，从而证实了材料的高质量。利用这种材料，忆阻器件被制造为电阻式随机存取存储器（RRAM）。基于尖峰电压输入，这些 RRAM 表现出超过 512 个周期的循环稳定性和 >450 秒的状态保持稳定性，显示出 <2% 漂移。对于类似突触的应用，RRAM 器件通过步进模式进行试点，以实现多级存储状态。这些基于 ALD 生长的 VO ₂器件展示了用作多权重突触突触连接的潜力，从而提高了神经形态应用中的可扩展性。

更新日期：2024-09-18

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