Joule ( IF 38.6 ) Pub Date : 2024-09-09 , DOI: 10.1016/j.joule.2024.08.008 Subrata Ghosh , Amin Nozariasbmarz , Huiju Lee , Lavanya Raman , Shweta Sharma , Rabeya B. Smriti , Dipika Mandal , Yu Zhang , Sumanta K. Karan , Na Liu , Jennifer L. Gray , Mohan Sanghadasa , Yi Xia , Shashank Priya , Wenjie Li , Bed Poudel
High-entropy engineering effectively reduces lattice thermal conductivity (κL) in thermoelectric (TE) materials; however, the chemical complexity of multiple elements in high-entropy materials often leads to phase segregation, limiting their electrical transport properties and overall TE performance. Herein, we report a p-type high-entropy stabilized single-phase half-Heusler alloy, MFeSb, specifically designed to enhance configurational entropy by introducing multiple element species on a single atomic site. This material exhibited low κL due to phonon group velocity reduction and strong phonon scattering from lattice strain generated through distorted lattices while maintaining a high power factor. The material demonstrated a record high figure of merit (zT) of 1.5 at 1,060 K, with an average zT of ∼0.92 over 300–1,060 K. Furthermore, superior conversion efficiencies of 15% and 14% for a single-leg and a unicouple module at a temperature difference of ΔT ∼671 K were achieved. Our findings provide a new avenue for enhancing TE material performance through high-entropy engineering.
中文翻译:
高熵驱动半霍斯勒合金提高热电性能
高熵工程有效降低热电(TE)材料的晶格导热系数(κ L );然而,高熵材料中多种元素的化学复杂性通常会导致相分离,限制其电传输性能和整体 TE 性能。在此,我们报告了一种p型高熵稳定单相半霍斯勒合金MFeSb,专门设计用于通过在单个原子位点上引入多种元素种类来增强构型熵。由于声子群速度降低以及扭曲晶格产生的晶格应变产生的强声子散射,该材料表现出低 κ L ,同时保持高功率因数。该材料在 1,060 K 温度下表现出创纪录的高品质因数 ( zT ) 1.5,在 300–1,060 K 温度范围内平均zT为 ∼0.92。此外,单腿和单耦合的卓越转换效率分别为 15% 和 14%模块的温差为 ΔT ∼671 K。我们的研究结果为通过高熵工程增强 TE 材料性能提供了一条新途径。