Monolayer molybdenum disulfide (MoS₂), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS₂ single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS₂ monolayers on industry-compatible substrates of c-plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO₃ precursor ratio control. The unidirectional alignment and seamless stitching of MoS₂ domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS₂ single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm²v⁻¹s⁻¹, and on/off ratio of ~10⁹. Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore’s law and industrial applications of 2D electronic circuits.

单层二硫化钼 ( _MoS2 ) 是一种新兴的二维 (2D) 半导体，有望超越硅电子学的基本极限并继续缩小场效应晶体管的尺寸。为了充分发挥其潜力和高端应用，在通用商业衬底上控制合成晶圆级单层 MoS ₂单晶是非常理想的，但也具有挑战性。在这里，我们通过 S/MoO ₃前驱体比例控制设计特定界面重构层的形成，展示了在工业兼容的c面蓝宝石衬底上成功外延生长 2 英寸单晶 MoS ₂单层。通过从原子级到厘米级的跨维度表征，证明了整个晶圆上 MoS ₂域的单向对准和无缝拼接。外延单层_MoS2单晶表现出良好的晶圆级均匀性和最先进的质量，从~100%的声子圆二色性、~70%的激子谷极化、~140 cm的室温迁移率证明了这一点² v ^-1 s ^-1 ，开/关比约为10 ⁹ 。我们的工作提供了一种在商业绝缘体基板上生产晶圆级单晶二维半导体的简单策略，为进一步扩展摩尔定律和二维电子电路的工业应用铺平了道路。