<br>具有超晶格结构的 HfO2–ZrO2 铁电电容器：提高疲劳稳定性、疲劳恢复和开关速度,ACS Applied Materials & Interfaces

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具有超晶格结构的 HfO2–ZrO2 铁电电容器：提高疲劳稳定性、疲劳恢复和开关速度
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-01-03 , DOI: 10.1021/acsami.3c15732
Mingshuang Kang ₁ , Yue Peng ₁ , Wenwu Xiao _{1,

2} , Yueyuan Zhang ₁ , Zhe Wang ₁ , Peiyuan Du ₁ , Hao Jiang ₁ , Fenning Liu ₁ , Yan Liu ₁ , Yue Hao ₁ , Genquan Han ₁

Affiliation

HfO ₂ –ZrO ₂铁电薄膜由于其在宽掺杂范围和低沉积温度下优异的铁电性能，最近引起了集成电路研究人员的广泛关注。在这项工作中，不同的HfO ₂ –ZrO ₂超晶格（SL）FE薄膜具有不同的周期：HfO ₂ （5个周期）–ZrO ₂ （5个周期）（SL ₅ ），HfO ₂ （10个周期）–ZrO ₂ （10个周期））（SL ₁₀ ）和HfO ₂ （15个循环）–ZrO ₂ （15个循环）（SL ₁₅ ）进行了系统研究。 HfZrO _x (HZO) 合金用作比较装置。与HZO薄膜相比，SL ₅薄膜表现出改进的铁电性能，在3V/10kHz的施加电压下_， 2倍剩余极化( 2Pr )值从41.4μC/cm 2 增加到48.6μC/cm ² 。此外，还测量了不同SL和HZO电容器在不同状态（初始、唤醒、疲劳和恢复）下的一阶反转曲线图。研究发现，与 HZO 电容器相比，SL 电容器可以有效抑制P - V循环过程中缺陷的扩散，从而提高疲劳稳定性特性和疲劳恢复能力。此外，根据非均匀场机制 (IFM) 模型得出结论，与 HZO 电容器相比，SL 薄膜的开关速度有所提高。这些结果表明SL结构具有优异的稳定性和恢复能力，在未来高速铁电存储器应用中具有很大的潜力。

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HfO2–ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

HfO₂–ZrO₂ ferroelectric films have recently gained considerable attention from integrated circuit researchers due to their excellent ferroelectric properties over a wide doping range and low deposition temperature. In this work, different HfO₂–ZrO₂ superlattice (SL) FE films with varying periodicity of HfO₂ (5 cycles)–ZrO₂ (5 cycles) (SL₅), HfO₂ (10 cycles)–ZrO₂ (10 cycles) (SL₁₀), and HfO₂ (15 cycles)–ZrO₂ (15 cycles) (SL₁₅) were studied systematically. The HfZrO_x (HZO) alloy was used as a comparison device. The SL₅ film demonstrated improved ferroelectric properties compared to the HZO film, with the 2 times remnant polarization (2P_r) values increasing from 41.4 to 48.6 μC/cm² at an applied voltage of 3 V/10 kHz. Furthermore, the first-order reversal curve diagrams of different SL and HZO capacitors at different states (initial, wake-up, fatigue, and recovery) were measured. The SL capacitors were found to effectively suppress the diffusion of defects during P–V cycling, resulting in improved fatigue stability characteristics and fatigue recovery capability compared to the HZO capacitor. Moreover, an improved switching speed of the SL films compared to the HZO capacitor was concluded based on the inhomogeneous field mechanism (IFM) model. These results indicate that the SL structure has a high potential in future high-speed ferroelectric memory applications with excellent stability and recovery capability.

更新日期：2024-01-03

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