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Antisite-Defects Control of Magnetic Properties in MnSb2Te4
ACS Nano ( IF 15.8 ) Pub Date : 2023-12-21 , DOI: 10.1021/acsnano.3c09064 Xinmeng Hu 1 , Xinyi He 2 , Zhilin Guo 1 , Toshio Kamiya 2 , Jiazhen Wu 1, 3, 4
ACS Nano ( IF 15.8 ) Pub Date : 2023-12-21 , DOI: 10.1021/acsnano.3c09064 Xinmeng Hu 1 , Xinyi He 2 , Zhilin Guo 1 , Toshio Kamiya 2 , Jiazhen Wu 1, 3, 4
Affiliation
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The intrinsic magnetic topological materials Mn(Sb/Bi)2n+2Te3n+4 have attracted extensive attention due to their topological quantum properties. Although, the Mn–Sb/Bi antisite defects have been frequently reported to exert significant influences on both magnetism and band topology, their formation mechanism and the methods to manipulate their distribution and concentration remain elusive. Here, we present MnSb2Te4 as a typical example and demonstrate that Mn–Sb antisite defects and magnetism can be tuned by controlling the crystal growth conditions. The cooling rate is identified as the primary key parameter. Magnetization and chemical analysis demonstrate that a slower cooling rate would lead to a higher Mn concentration, a higher magnetic transition temperature, and a higher saturation moment. Further analysis indicates that the Mn content at the original Mn site (MnMn, 3a site) varies more significantly with the cooling rate than the Mn content at the Sb site (MnSb, 6c site). Based on experimental observations, magnetic phase diagrams regarding MnMn and MnSb concentrations are constructed. With the assistance of first-principles calculations, it is demonstrated that the Mn–Sb mixing states primarily result from the mixing entropy and the growth kinetics. The present findings offer valuable insights into defects engineering for preparation of two-dimensional quantum materials.
中文翻译：
MnSb2Te4 磁性能的反位点缺陷控制
本征磁性拓扑材料Mn(Sb/Bi) 2 n +2 Te 3 n +4因其拓扑量子特性而受到广泛关注。尽管Mn-Sb/Bi反位缺陷经常被报道对磁性和能带拓扑产生重大影响，但它们的形成机制以及控制其分布和浓度的方法仍然难以捉摸。在这里，我们以 MnSb 2 Te 4作为典型例子，并证明可以通过控制晶体生长条件来调节 Mn-Sb 反位缺陷和磁性。冷却速率被确定为主要关键参数。磁化和化学分析表明，较慢的冷却速率会导致较高的锰浓度、较高的磁转变温度和较高的饱和力矩。进一步分析表明，原始Mn位点（Mn Mn , 3a位点）的Mn含量随冷却速率的变化比Sb位点（Mn Sb , 6c位点）的Mn含量变化更为显着。根据实验观察，构建了有关 Mn Mn和 Mn Sb浓度的磁相图。借助第一性原理计算，证明了Mn-Sb混合态主要由混合熵和生长动力学产生。目前的研究结果为制备二维量子材料的缺陷工程提供了宝贵的见解。
更新日期：2023-12-21
中文翻译：
MnSb2Te4 磁性能的反位点缺陷控制
本征磁性拓扑材料Mn(Sb/Bi) 2 n +2 Te 3 n +4因其拓扑量子特性而受到广泛关注。尽管Mn-Sb/Bi反位缺陷经常被报道对磁性和能带拓扑产生重大影响，但它们的形成机制以及控制其分布和浓度的方法仍然难以捉摸。在这里，我们以 MnSb 2 Te 4作为典型例子，并证明可以通过控制晶体生长条件来调节 Mn-Sb 反位缺陷和磁性。冷却速率被确定为主要关键参数。磁化和化学分析表明，较慢的冷却速率会导致较高的锰浓度、较高的磁转变温度和较高的饱和力矩。进一步分析表明，原始Mn位点（Mn Mn , 3a位点）的Mn含量随冷却速率的变化比Sb位点（Mn Sb , 6c位点）的Mn含量变化更为显着。根据实验观察，构建了有关 Mn Mn和 Mn Sb浓度的磁相图。借助第一性原理计算，证明了Mn-Sb混合态主要由混合熵和生长动力学产生。目前的研究结果为制备二维量子材料的缺陷工程提供了宝贵的见解。
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