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Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device
Advanced Materials ( IF 27.4 ) Pub Date : 2023-10-09 , DOI: 10.1002/adma.202308090 Siyu Feng 1, 2 , Jiangxu Li 1 , Lizhi Feng 1, 3, 4 , Zitong Liu 1 , Junchao Wang 1 , Cong Cui 1 , Ouxiang Zhou 1 , Lijie Deng 1, 3 , Hanning Xu 1 , Bing Leng 5 , Xing-Qiu Chen 1 , Xin Jiang 1 , Baodan Liu 3, 4 , Xinglai Zhang 1
Advanced Materials ( IF 27.4 ) Pub Date : 2023-10-09 , DOI: 10.1002/adma.202308090 Siyu Feng 1, 2 , Jiangxu Li 1 , Lizhi Feng 1, 3, 4 , Zitong Liu 1 , Junchao Wang 1 , Cong Cui 1 , Ouxiang Zhou 1 , Lijie Deng 1, 3 , Hanning Xu 1 , Bing Leng 5 , Xing-Qiu Chen 1 , Xin Jiang 1 , Baodan Liu 3, 4 , Xinglai Zhang 1
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Simultaneous implementation of photodetector and neuromorphic vision sensor (NVS) on a single device faces a great challenge, due to the inherent speed discrepancy in their photoresponse characteristics. In this work, a trench-bridged GaN/Ga2O3/GaN back-to-back double heterojunction array device is fabricated to enable the advanced functionalities of both devices on a single device. Interestingly, the device shows fast photoresponse and persistent photoconductivity behavior at low and high voltages, respectively, through the modulation of oxygen vacancy ionization and de-ionization processes in Ga2O3. Consequently, the role of the optoelectronic device can be altered between the photodetector and NVS by simply adjusting the magnitude of bias voltage. As a photodetector, the device is able to realize fast optical imaging and optical communication functions. On the other hand, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing as an NVS. The utilization of NVS for image pre-processing leads to a noticeable enhancement in both recognition accuracy and efficiency. The results presented in this work not only offer a new avenue to obtain complex functionality on a single optoelectronic device but also provide opportunities to implement advanced robotic vision systems and neuromorphic computing.
中文翻译：
通过单个器件上的偏置电压调节实现光电探测器和神经形态视觉传感器的双模式转换
由于光响应特性固有的速度差异，在单个设备上同时实现光电探测器和神经形态视觉传感器（NVS）面临着巨大的挑战。在这项工作中，制造了沟槽桥接的GaN/Ga 2 O 3 /GaN背靠背双异质结阵列器件，以在单个器件上实现两种器件的先进功能。有趣的是，通过调节Ga 2 O 3中的氧空位电离和去电离过程，该器件分别在低电压和高电压下表现出快速光响应和持久光电导行为。因此，通过简单地调整偏置电压的大小，可以在光电探测器和NVS之间改变光电器件的作用。作为光电探测器，该器件能够实现快速光学成像和光通信功能。另一方面，该设备作为 NVS 表现出出色的图像传感、图像存储和神经形态视觉预处理。利用NVS进行图像预处理可以显着提高识别精度和效率。这项工作中提出的结果不仅提供了在单个光电设备上获得复杂功能的新途径，而且还提供了实现先进的机器人视觉系统和神经形态计算的机会。
更新日期：2023-10-09
中文翻译：
通过单个器件上的偏置电压调节实现光电探测器和神经形态视觉传感器的双模式转换
由于光响应特性固有的速度差异，在单个设备上同时实现光电探测器和神经形态视觉传感器（NVS）面临着巨大的挑战。在这项工作中，制造了沟槽桥接的GaN/Ga 2 O 3 /GaN背靠背双异质结阵列器件，以在单个器件上实现两种器件的先进功能。有趣的是，通过调节Ga 2 O 3中的氧空位电离和去电离过程，该器件分别在低电压和高电压下表现出快速光响应和持久光电导行为。因此，通过简单地调整偏置电压的大小，可以在光电探测器和NVS之间改变光电器件的作用。作为光电探测器，该器件能够实现快速光学成像和光通信功能。另一方面，该设备作为 NVS 表现出出色的图像传感、图像存储和神经形态视觉预处理。利用NVS进行图像预处理可以显着提高识别精度和效率。这项工作中提出的结果不仅提供了在单个光电设备上获得复杂功能的新途径，而且还提供了实现先进的机器人视觉系统和神经形态计算的机会。
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