Enhanced performance of perovskite solar cells via a bilateral electron-donating passivator as a molecule bridge,Inorganic Chemistry Frontiers

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Enhanced performance of perovskite solar cells via a bilateral electron-donating passivator as a molecule bridge
Inorganic Chemistry Frontiers ( IF 6.1 ) Pub Date : 2023-08-29 , DOI: 10.1039/d3qi01531a
Weichun Pan ₁ , Pengxu Chen ₁ , Sijia Zhu ₁ , Ruowei He ₁ , Qingshui Zheng ₁ , Fengxian Cao ₁ , Zhang Lan ₁ , Jihuai Wu ₁ , Weihai Sun ₁ , Yunlong Li ₂

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Defects at the buried interface are the primary factors contributing to recombination losses and instability in perovskite solar cells (PSCs) with n–i–p structure. Here, a molecule with bilateral electron-donating groups, 6-amino-1-hexanol (HAL), is introduced between SnO₂ and perovskite (PVK) to optimize the characteristics of the buried interfacial properties, as well as the PVK film quality. The surface defects of SnO₂ can be more effectively passivated, and its energy level structure can be tuned more appropriately. Meanwhile, the electron-donating groups in HAL can passivate the Pb²⁺ defects and stabilize the [PbI₆]⁴⁻ octahedra at the buried interface. With the assistance of bilateral electron-donating groups, HAL can act as a molecular bridge to easily bridge SnO₂ and PVK to passivate the buried interfacial defects, thus enhancing device performance. As a result, the photovoltaic performance was significantly improved by the buried modification with HAL, ultimately achieving a champion PCE of 23.58%, far superior to the inferior PCE of 21.30% of the pristine device. Furthermore, after 35 days of storage at approximately 35% relative humidity (RH) and room temperature, the device based on HAL-modified SnO₂ demonstrates significantly better stability than the pristine device, as it still maintains over 90% of the initial efficiency. This study provides an effective molecular bridge strategy for further enhancing the performance of PSCs.

中文翻译：

通过双边供电子钝化剂作为分子桥增强钙钛矿太阳能电池的性能

埋入界面的缺陷是导致 n-i-p 结构钙钛矿太阳能电池（PSC）复合损失和不稳定的主要因素。_{在此，在SnO 2}和钙钛矿（PVK ）之间引入具有双边给电子基团的分子6-氨基-1-己醇（HAL），以优化埋入界面特性以及PVK薄膜质量。可以更有效地钝化SnO ₂的表面缺陷，并且可以更适当地调节其能级结构。同时，HAL中的给电子基团可以钝化Pb ²⁺缺陷并稳定[PbI ₆ ] ⁴⁻埋入界面处呈八面体。在双边给电子基团的帮助下，HAL可以作为分子桥，轻松桥接SnO ₂和PVK，钝化掩埋的界面缺陷，从而提高器件性能。结果，通过HAL掩埋改性，光伏性能显着提高，最终实现了23.58%的冠军PCE，远远优于原始器件21.30%的劣势PCE。此外，在约 35% 相对湿度 (RH) 和室温下储存 35 天后，基于 HAL 改性 SnO _2的器件与原始设备相比，它表现出明显更好的稳定性，因为它仍然保持着超过 90% 的初始效率。该研究为进一步提高PSC的性能提供了有效的分子桥策略。

更新日期：2023-08-29

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