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Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives
InfoMat ( IF 22.7 ) Pub Date : 2023-08-08 , DOI: 10.1002/inf2.12470 Weijie Liu 1 , Yiye Yu 1, 2 , Meng Peng 1 , Zhihua Zheng 1 , Pengcheng Jian 1 , Yang Wang 3 , Yuanchen Zou 2 , Yongming Zhao 1 , Fang Wang 2 , Feng Wu 1 , Changqing Chen 1 , Jiangnan Dai 1 , Peng Wang 2 , Weida Hu 2
InfoMat ( IF 22.7 ) Pub Date : 2023-08-08 , DOI: 10.1002/inf2.12470 Weijie Liu 1 , Yiye Yu 1, 2 , Meng Peng 1 , Zhihua Zheng 1 , Pengcheng Jian 1 , Yang Wang 3 , Yuanchen Zou 2 , Yongming Zhao 1 , Fang Wang 2 , Feng Wu 1 , Changqing Chen 1 , Jiangnan Dai 1 , Peng Wang 2 , Weida Hu 2
Affiliation
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In the last decade, two-dimensional layered materials (2DLMs) have been drawing extensive attentions due to their unique properties, such as absence of surface dangling bonds, thickness-dependent bandgap, high absorption coefficient, large specific surface area, and so on. But the high-quality growth and transfer of wafer-scale 2DLMs films is still a great challenge for the commercialization of pure 2DLMs-based photodetectors. Conversely, the material growth and device fabrication technologies of three-dimensional (3D) semiconductors photodetectors tend to be gradually matured. However, the further improvement of the photodetection performance is limited by the difficult heterogeneous integration or the inferior crystal quality via heteroepitaxy. Fortunately, 2D/3D van der Waals heterostructures (vdWH) combine the advantages of the two types of materials simultaneously, which may provide a new platform for developing high-performance optoelectronic devices. Here, we first discuss the unique advantages of 2D/3D vdWH for the future development of photodetection field and simply introduce the structure categories, working mechanisms, and the typical fabrication methods of 2D/3D vdWH photodetector. Then, we outline the recent progress on 2D/3D vdWH-based photodetection devices integrating 2DLMs with the traditional 3D semiconductor materials, including Si, Ge, GaAs, AlGaN, SiC, and so on. Finally, we highlight the current challenges and prospects of heterointegrating 2DLMs with traditional 3D semiconductors toward photodetection applications.
中文翻译：
将 2D 层状材料与 3D 块体材料集成为用于光电检测的范德华异质结构：现状和前景
在过去的十年中，二维层状材料（2DLM）因其独特的性质而受到广泛关注，例如没有表面悬挂键、厚度依赖的带隙、高吸收系数、大比表面积等。但晶圆级 2DLM 薄膜的高质量生长和转移对于纯 2DLM 光电探测器的商业化仍然是一个巨大的挑战。相反，三维（3D）半导体光电探测器的材料生长和器件制造技术趋于逐渐成熟。然而，由于异质集成困难或异质外延晶体质量较差，限制了光电探测性能的进一步提高。幸运的是，2D/3D范德华异质结构（vdWH）同时结合了两种材料的优点，这可能为开发高性能光电器件提供新的平台。在这里，我们首先讨论2D/3D vdWH对于光电探测领域未来发展的独特优势，并简单介绍2D/3D vdWH光电探测器的结构类别、工作机制和典型制造方法。然后，我们概述了将 2DLM 与传统 3D 半导体材料（包括 Si、Ge、GaAs、AlGaN、SiC 等）集成的基于 2D/3D vdWH 的光电探测器件的最新进展。最后，我们强调了将 2DLM 与传统 3D 半导体异质集成应用于光电检测应用的当前挑战和前景。
更新日期：2023-08-08
中文翻译：
将 2D 层状材料与 3D 块体材料集成为用于光电检测的范德华异质结构：现状和前景
在过去的十年中，二维层状材料（2DLM）因其独特的性质而受到广泛关注，例如没有表面悬挂键、厚度依赖的带隙、高吸收系数、大比表面积等。但晶圆级 2DLM 薄膜的高质量生长和转移对于纯 2DLM 光电探测器的商业化仍然是一个巨大的挑战。相反，三维（3D）半导体光电探测器的材料生长和器件制造技术趋于逐渐成熟。然而，由于异质集成困难或异质外延晶体质量较差，限制了光电探测性能的进一步提高。幸运的是，2D/3D范德华异质结构（vdWH）同时结合了两种材料的优点，这可能为开发高性能光电器件提供新的平台。在这里，我们首先讨论2D/3D vdWH对于光电探测领域未来发展的独特优势，并简单介绍2D/3D vdWH光电探测器的结构类别、工作机制和典型制造方法。然后，我们概述了将 2DLM 与传统 3D 半导体材料（包括 Si、Ge、GaAs、AlGaN、SiC 等）集成的基于 2D/3D vdWH 的光电探测器件的最新进展。最后，我们强调了将 2DLM 与传统 3D 半导体异质集成应用于光电检测应用的当前挑战和前景。
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