当前位置：
X-MOL 学术
›
Cryst. Growth Des.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
On the Origin of Transition to Nonpolar a-Plane GaN Growth on c-Plane Sapphire
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2023-04-24 , DOI: 10.1021/acs.cgd.3c00180 Vladimir Ivantsov 1
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2023-04-24 , DOI: 10.1021/acs.cgd.3c00180 Vladimir Ivantsov 1
Affiliation
|
A spontaneous change of growth orientation from polar c- to nonpolar a-plane during hydride vapor-phase epitaxy of GaN on c-plane sapphire substrates was examined by X-ray diffraction 2θ–ω and ω-scans and pole figures as well as by scanning electron microscopy. The effect was observed in epitaxial layers grown on the substrates without a buffer layer. It was found that the advancement of the transition to the a-plane did not comply with the gradual transformation usual for the geometric selection but followed instead with the abrupt change from one orientation to another, finalizing above the substrate surface. Pole figures revealed twinning in the epilayers. This twinning, together with the observed influence of the substrate treatment on the result of epitaxy, favored the model that put forward the faceting of the sapphire surface, especially faceting with the r-facets, as the main reason for the reorientation effect. The discussion of the model unwrapped the importance of r-faceting not just for the growth on the c-plane sapphire but for the growth on the m- and a-planes also.
中文翻译：
在 c 面蓝宝石上向非极性 a 面 GaN 生长过渡的起源
通过 X 射线衍射 2θ – ω和ω扫描和极图以及通过扫描电子显微镜。在没有缓冲层的衬底上生长的外延层中观察到该效果。结果发现，过渡到a的进展-平面不符合通常用于几何选择的逐渐变换，而是遵循从一个方向到另一个方向的突然变化，最终在基板表面上方完成。极图揭示了外延层中的孪晶。这种孪生，连同观察到的衬底处理对外延结果的影响，支持提出蓝宝石表面刻面的模型，特别是与 r 刻面的刻面，作为重新定向效应的主要原因。模型的讨论揭示了r面不仅对c面蓝宝石生长而且对m面和a面生长的重要性。
更新日期：2023-04-24
中文翻译：
在 c 面蓝宝石上向非极性 a 面 GaN 生长过渡的起源
通过 X 射线衍射 2θ – ω和ω扫描和极图以及通过扫描电子显微镜。在没有缓冲层的衬底上生长的外延层中观察到该效果。结果发现，过渡到a的进展-平面不符合通常用于几何选择的逐渐变换，而是遵循从一个方向到另一个方向的突然变化，最终在基板表面上方完成。极图揭示了外延层中的孪晶。这种孪生，连同观察到的衬底处理对外延结果的影响，支持提出蓝宝石表面刻面的模型，特别是与 r 刻面的刻面，作为重新定向效应的主要原因。模型的讨论揭示了r面不仅对c面蓝宝石生长而且对m面和a面生长的重要性。
京公网安备 11010802027423号